公开(公告)号：US20240258401A1

公开(公告)日：2024-08-01

申请号：US18420264

申请日：2024-01-23

Applicant: Kioxia Corporation

Inventor： Yusuke NAKAJIMA ,  Akira TAKASHIMA ,  Tsunehiro INO ,  Yasushi NAKASAKI

IPC: H01L29/51 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L29/513 ,  H01L29/517 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: A semiconductor device of embodiments includes: a semiconductor layer; a gate electrode layer including a first conductive layer containing a first material and a second conductive layer between the first conductive layer and the semiconductor layer and containing a second material different from the first material; and a first insulating layer between the semiconductor layer and the gate electrode layer and containing aluminum oxide, the aluminum oxide including α (alpha)-aluminum oxide or θ (theta)-aluminum oxide. The direction of the crystal axis of the aluminum oxide falls within a range of ±10° with respect to a first direction from the semiconductor layer toward the gate electrode layer. The direction of the crystal axis of the first material falls within a range of ±10° with respect to the first direction. The direction of the crystal axis of the second material falls within a range of ±10° with respect to the first direction.

公开(公告)号：US20230301089A1

公开(公告)日：2023-09-21

申请号：US17819039

申请日：2022-08-11

Applicant: Kioxia Corporation

Inventor： Tsunehiro INO ,  Yusuke NAKAJIMA ,  Akira TAKASHIMA

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/1157

CPC classification number: H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/1157

Abstract: A method for manufacturing an oxide film according to an embodiment includes forming a first film containing aluminum (Al) and nitrogen (N), and forming a second film containing aluminum (Al) and oxygen (O) by oxidizing the first film in an atmosphere containing heavy water (D2O).

公开(公告)号：US20230086074A1

公开(公告)日：2023-03-23

申请号：US17694098

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Yusuke NAKAJIMA ,  Akira TAKASHIMA ,  Tsunehiro INO ,  Yasushi NAKASAKI ,  Koji USUDA ,  Masaki NOGUCHI

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a gate electrode layer, and a first insulating layer provided between the semiconductor layer and the gate electrode layer, the first insulating layer including aluminum oxide including at least one crystal phase selected from the group consisting of alpha (α)-aluminum oxide and theta (θ)-aluminum oxide, the first insulating layer having a thickness of equal to or less than 2.5 nm in a first direction from the semiconductor layer toward the gate electrode layer.

公开(公告)号：US20220093634A1

公开(公告)日：2022-03-24

申请号：US17189218

申请日：2021-03-01

Applicant: KIOXIA CORPORATION

Inventor： Akira TAKASHIMA ,  Tsunehiro INO ,  Yasushi NAKASAKI ,  Yoshihiko MORIYAMA

IPC: H01L27/11582 ,  H01L29/51

Abstract: According to one embodiment, a semiconductor memory device includes a stacked structure including conductive layers arranged in a first direction, and a columnar structure extending in the first direction in the first stacked structure. The columnar structure includes a semiconductor layer extending in the first direction, a charge storage layer between the semiconductor layer and the stacked structure, a first insulating layer between the semiconductor layer and the charge storage layer, and a second insulating layer between the stacked structure and the charge storage layer. The charge storage layer is aluminum nitride with a wurtzite crystal structure in which the c-axis is oriented in a direction towards the first insulating layer from the second insulating layer.

公开(公告)号：US20210296326A1

公开(公告)日：2021-09-23

申请号：US17000545

申请日：2020-08-24

Applicant: Kioxia Corporation

Inventor： Tsunehiro INO ,  Akira TAKASHIMA ,  Reika TANAKA

IPC: H01L27/1157 ,  H01L27/11565 ,  H01L27/11578

Abstract: A semiconductor memory device of an embodiment includes: a semiconductor layer; a gate electrode layer; a first insulating layer provided between the semiconductor layer and the gate electrode layer; a second insulating layer provided between the first insulating layer and the gate electrode layer; and an intermediate layer provided between the first insulating layer and the second insulating layer, the intermediate layer containing a first crystal of a space group Pbca (space group number 61), a space group P42/nmc (space group number 137), or a space group R-3m (space group number 166), and the intermediate layer containing hafnium (Hf), oxygen (O), and nitrogen (N).

公开(公告)号：US20230085754A1

公开(公告)日：2023-03-23

申请号：US17652308

申请日：2022-02-24

Applicant: Kioxia Corporation

Inventor： Tsunehiro INO ,  Akira TAKASHIMA

IPC: H01L27/1159 ,  H01L29/51 ,  H01L29/78

Abstract: A memory device according to an embodiment includes a semiconductor layer, a gate electrode layer, and a first dielectric layer provided between the semiconductor layer and the gate electrode layer. The first dielectric layer contains aluminum (Al), a first element, nitrogen (N), and silicon (Si). The first element is at least one element selected from the group consisting of scandium (Sc), yttrium (Y), lanthanoid (Ln), boron (B), gallium (Ga), and indium (In).

公开(公告)号：US20220254935A1

公开(公告)日：2022-08-11

申请号：US17731721

申请日：2022-04-28

Applicant: Kioxia Corporation

Inventor： Masaki NOGUCHI ,  Akira TAKASHIMA ,  Tatsunori ISOGAI

IPC: H01L29/792 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/51

Abstract: A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.

公开(公告)号：US20210257500A1

公开(公告)日：2021-08-19

申请号：US17019662

申请日：2020-09-14

Applicant: Kioxia Corporation

Inventor： Masaki NOGUCHI ,  Akira TAKASHIMA

IPC: H01L29/786 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/66 ,  H01L29/04

Abstract: In one embodiment, a semiconductor device includes a stacked film including electrode layers and insulating layers that are alternately stacked in a first direction. The device further includes a first insulator, a charge storage layer, a second insulator and a semiconductor layer that are provided in the stacked film. The device further includes a third insulator provided between an electrode layer and an insulating layer and between the electrode layer and the first insulator, and including aluminum oxide having an α crystal phase.

公开(公告)号：US20240428856A1

公开(公告)日：2024-12-26

申请号：US18669736

申请日：2024-05-21

Applicant: Kioxia Corporation

Inventor： Akira TAKASHIMA ,  Tsunehiro INO

IPC: G11C16/04 ,  H10B43/27 ,  H10B43/35

Abstract: A semiconductor memory device of an embodiment includes a stacked body including a first insulating layer, a first conductive layer and a second insulating layer; a semiconductor film extending in a first direction; a tunnel insulating film provided between the stacked body and the semiconductor film, the tunnel insulating film extending in the first direction; a first block insulating film provided between the first conductive layer and the tunnel insulating film; and a first charge storage film containing a metal oxide or a metal oxynitride and including: a first portion provided between the tunnel insulating film and the first block insulating film, a second portion provided between the tunnel insulating film and the first insulating layer, the second portion being connected to the first portion and a third portion provided between the tunnel insulating film and the second insulating layer, the third portion being connected to the first portion.

公开(公告)号：US20240284677A1

公开(公告)日：2024-08-22

申请号：US18443531

申请日：2024-02-16

Applicant: Kioxia Corporation

Inventor： Chihiro UMEDA ,  Yuta KAMIYA ,  Tomohisa IINO ,  Masaki NOGUCHI ,  Akira TAKASHIMA ,  Yusuke NAKAJIMA

IPC: H10B43/30 ,  H10B43/27

CPC classification number: H10B43/30 ,  H10B43/27

Abstract: A semiconductor device includes electrode layers and first insulating films alternately stacked on top of one another; a second insulating film extending along an upper surface, a lower surface, and a side surface of one of electrode layers; a charge storage layer extending along a side surface of the second insulating film with a third insulating film interposed therebetween; and a semiconductor layer extending along a side surface of the charge storage layer with a fourth insulating film interposed therebetween. A hydrogen concentration in the fourth insulating film is equal to or higher than a hydrogen concentration in the charge storage layer, which is equal to or higher than a hydrogen concentration in the third insulating film, which is equal to or higher than a hydrogen concentration in the second insulating film.