公开(公告)号：US20230290899A1

公开(公告)日：2023-09-14

申请号：US17311999

申请日：2020-11-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Doh Kwon LEE ,  Seung Tae KIM ,  Byoung Soo YU ,  Yoon Hee JANG ,  Jeung Hyun JEONG

IPC: H01L31/18 ,  C25F3/30

CPC classification number: H01L31/186 ,  C25F3/30 ,  H01L31/0322

Abstract: The present invention relates to a method for planarizing a CIS-based thin film, the method including: electropolishing a CIS-based compound layer by applying current or voltage to an electrochemical cell including: a CIS-based compound layer provided on a conductive base material, as a working electrode; a counter electrode; and an electrolyte solution including a precursor of elements constituting the CIS-based compound layer, a supporting electrolyte, a complexing agent, and an additive including a hydroxy functional group.