公开(公告)号：US10886161B2

公开(公告)日：2021-01-05

申请号：US16282299

申请日：2019-02-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyung-jun Kim ,  Sanghyeon Kim ,  Hansung Kim ,  Seong Kwang Kim ,  Hyeong Rak Lim

IPC: H01L21/762 ,  H01L21/683 ,  H01L29/06 ,  H01L21/02 ,  H01L21/78

Abstract: A method for manufacturing a semiconductor device according to embodiments may include forming a sacrificial layer on a first substrate including first dopant atoms and second dopant atoms, and forming a germanium (Ge) layer on the sacrificial layer. Here, the germanium (Ge) layer may include the first dopant atoms diffused from the first substrate by growth temperature in the forming step. Additionally, the method for manufacturing a semiconductor device may further include annealing after growth of the germanium (Ge) layer so that the germanium (Ge) layer may include second dopant atoms.