公开(公告)号：US10886161B2

公开(公告)日：2021-01-05

申请号：US16282299

申请日：2019-02-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyung-jun Kim ,  Sanghyeon Kim ,  Hansung Kim ,  Seong Kwang Kim ,  Hyeong Rak Lim

IPC: H01L21/762 ,  H01L21/683 ,  H01L29/06 ,  H01L21/02 ,  H01L21/78

Abstract: A method for manufacturing a semiconductor device according to embodiments may include forming a sacrificial layer on a first substrate including first dopant atoms and second dopant atoms, and forming a germanium (Ge) layer on the sacrificial layer. Here, the germanium (Ge) layer may include the first dopant atoms diffused from the first substrate by growth temperature in the forming step. Additionally, the method for manufacturing a semiconductor device may further include annealing after growth of the germanium (Ge) layer so that the germanium (Ge) layer may include second dopant atoms.

公开(公告)号：US09941168B1

公开(公告)日：2018-04-10

申请号：US15631309

申请日：2017-06-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon Kim ,  Hyung-jun Kim ,  Jae-Phil Shim ,  Seong Kwang Kim ,  Won Jun Choi

IPC: H01L21/78 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L21/7813 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/30617

Abstract: A method for manufacturing a semiconductor device by epitaxial lift-off includes: forming a sacrificial layer containing an III-V compound on a first substrate, forming a device layer on the sacrificial layer, patterning the sacrificial layer and the device layer into a shape having an extending portion along a first direction determined based on a surface orientation of the III-V compound of the sacrificial layer, bonding the patterned device layer onto a second substrate, and etching the sacrificial layer by using an etching solution in a state where the device layer is bonded onto the second substrate, to remove the sacrificial layer and the first substrate. Using the method for manufacturing a semiconductor device, it is possible to improve a process yield and increase a process speed by using the difference in etch rates depending on crystal orientation, which is an inherent characteristic of an III-V compound, during an ELO process.

公开(公告)号：US12211899B2

公开(公告)日：2025-01-28

申请号：US17583206

申请日：2022-01-25

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyung-jun Kim ,  Seung Hwan Kim

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/10

Abstract: Embodiments relate to a semiconductor device, which includes: a substrate made of a first material; an insulating layer formed on an upper surface of the substrate; a trench formed at the insulating layer to penetrate the insulating layer toward the substrate; and a seed layer disposed in the trench. The seed layer is made of a second material, the second material lattice-mismatches with respect to the first material, the seed layer includes a threading dislocation extending at least partially in a first direction non-parallel to the upper surface of the substrate and parallel to a direction of a (111) plane and a threading dislocation extending at least partially in a second direction, and the extension of the threading dislocation is terminated at a sidewall of the trench.

公开(公告)号：US09337272B2

公开(公告)日：2016-05-10

申请号：US14508404

申请日：2014-10-07

Applicant: Korea Institute of Science and Technology

Inventor： Hyun Cheol Koo ,  Hyung-jun Kim ,  Joonyeon Chang ,  Won Young Choi ,  Suk Hee Han

IPC: H01L29/06 ,  H01L29/12 ,  H01L29/82 ,  H01L29/205 ,  H01L29/16

CPC classification number: H01L29/122 ,  B82Y10/00 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/1025 ,  H01L29/1606 ,  H01L29/205 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/08

Abstract: A spin transistor includes: an input part that is made of a material exhibiting a spin Hall effect and configured to transfer electrons with a predetermined direction of spin to a connecting part; and the connecting part that receives the electrons with the predetermined direction of spin from the input part, rotates the spin of the electrons in accordance with a gate voltage applied to the gate electrode, and transfers the electrons to the output part.

Abstract translation: 自旋晶体管包括：输入部分，其由表现出自旋霍尔效应并被配置为将电子以预定旋转方向转移到连接部分的材料制成; 并且从输入部分接收具有预定旋转方向的电子的连接部分，根据施加到栅电极的栅极电压来旋转电子的自旋，并将电子传送到输出部分。