公开(公告)号：US09941168B1

公开(公告)日：2018-04-10

申请号：US15631309

申请日：2017-06-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon Kim ,  Hyung-jun Kim ,  Jae-Phil Shim ,  Seong Kwang Kim ,  Won Jun Choi

IPC: H01L21/78 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L21/7813 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/30617

Abstract: A method for manufacturing a semiconductor device by epitaxial lift-off includes: forming a sacrificial layer containing an III-V compound on a first substrate, forming a device layer on the sacrificial layer, patterning the sacrificial layer and the device layer into a shape having an extending portion along a first direction determined based on a surface orientation of the III-V compound of the sacrificial layer, bonding the patterned device layer onto a second substrate, and etching the sacrificial layer by using an etching solution in a state where the device layer is bonded onto the second substrate, to remove the sacrificial layer and the first substrate. Using the method for manufacturing a semiconductor device, it is possible to improve a process yield and increase a process speed by using the difference in etch rates depending on crystal orientation, which is an inherent characteristic of an III-V compound, during an ELO process.

公开(公告)号：US10886161B2

公开(公告)日：2021-01-05

申请号：US16282299

申请日：2019-02-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyung-jun Kim ,  Sanghyeon Kim ,  Hansung Kim ,  Seong Kwang Kim ,  Hyeong Rak Lim

IPC: H01L21/762 ,  H01L21/683 ,  H01L29/06 ,  H01L21/02 ,  H01L21/78

Abstract: A method for manufacturing a semiconductor device according to embodiments may include forming a sacrificial layer on a first substrate including first dopant atoms and second dopant atoms, and forming a germanium (Ge) layer on the sacrificial layer. Here, the germanium (Ge) layer may include the first dopant atoms diffused from the first substrate by growth temperature in the forming step. Additionally, the method for manufacturing a semiconductor device may further include annealing after growth of the germanium (Ge) layer so that the germanium (Ge) layer may include second dopant atoms.