公开(公告)号：US09508897B2

公开(公告)日：2016-11-29

申请号：US14277905

申请日：2014-05-15

Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTE

Inventor： Seong Ran Jeon ,  Jae Bum Kim ,  Seung Jae Lee

IPC: H01L33/08 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/32

Abstract: The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same. The multi-luminous element according to the present invention reduces loss of light emitting efficiency and can generate multi-wavelength light by repeatedly disposing the first and second active layers in the horizontal direction.

Abstract translation: 多发光元件及其制造方法技术领域本发明涉及多发光元件及其制造方法。 本发明提供了一种多发光元件，包括：设置在基板上的缓冲层; 设置在缓冲层上的第一类型半导体层; 第一有源层，其设置在所述第一类型半导体层上并被图案化以暴露所述第一类型半导体层的一部分; 设置在由所述第一有源层曝光的所述第一类型半导体层上的第二有源层; 以及设置在第一有源层和第二有源层上的第二类型半导体层，第一和第二有源层在水平方向上重复设置，及其制造方法。 根据本发明的多发光元件减少了发光效率的损失，并且可以通过在水平方向上重复地布置第一和第二有源层而产生多波长的光。

公开(公告)号：US20140246649A1

公开(公告)日：2014-09-04

申请号：US14277905

申请日：2014-05-15

Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTE

Inventor： Seong Ran Jeon ,  Jae Bum Kim ,  Seung Jae Lee

IPC: H01L33/08 ,  H01L33/06

CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/32

Abstract: The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same. The multi-luminous element according to the present invention reduces loss of light emitting efficiency and can generate multi-wavelength light by repeatedly disposing the first and second active layers in the horizontal direction.

Abstract translation: 多发光元件及其制造方法技术领域本发明涉及多发光元件及其制造方法。 本发明提供了一种多发光元件，包括：设置在基板上的缓冲层; 设置在缓冲层上的第一类型半导体层; 第一有源层，其设置在所述第一类型半导体层上并被图案化以暴露所述第一类型半导体层的一部分; 设置在由所述第一有源层曝光的所述第一类型半导体层上的第二有源层; 以及设置在第一有源层和第二有源层上的第二类型半导体层，第一和第二有源层在水平方向上重复设置，及其制造方法。 根据本发明的多发光元件减少了发光效率的损失，并且可以通过在水平方向上重复地布置第一和第二有源层而产生多波长的光。