METHOD FOR PREPARING HIGH-PURITY INDIUM

    公开(公告)号:US20250075289A1

    公开(公告)日:2025-03-06

    申请号:US18805621

    申请日:2024-08-15

    Abstract: Provided is a method for preparing high-purity indium (In). The method for preparing the high-purity In includes: distilling refined In to obtain an In vapor-containing gas; and condensing the In vapor-containing gas to obtain the high-purity In; where the distilling is conducted at a temperature of 1,000° C. to 1,100° C. under a vacuum degree of 1.0×10−3 Pa to 5.0×10−2 Pa; and the condensing is conducted at a temperature of 700° C. to 900° C. under a vacuum degree of 1.0×10−3 Pa to 5.0×10−2 Pa. The In vapor-containing gas is obtained by controlling the temperature and vacuum degree of the distilling to evaporate In and impurities with a vapor pressure higher than the In. The temperature and vacuum degree of the condensing are adjusted to condense the In in the In vapor-containing gas.

    Device for Continuous Treatment of Materials Containing Volatile Components

    公开(公告)号:US20230191478A1

    公开(公告)日:2023-06-22

    申请号:US17928471

    申请日:2022-03-24

    CPC classification number: B22D43/007

    Abstract: Disclosed is a device for continuous treatment of materials containing volatile components, which belongs to the field of pyrometallurgical equipment. The device includes a feeding unit, a heating unit, a slag raking unit and a slag collecting unit. The feeding unit is configured to feed the materials with a push rod or in a spiral mode. The heating unit is provided with a square furnace body, and a first slag raking port is provided in the lower part of the furnace body. The slag collecting unit is provided with a slag discharging port at the lower portion thereof, is provided with a slag smashing port at the sidewall thereof, and is provided with a viewing port at the top thereof. The slag collecting unit and the heating unit are connected through a pipeline, thus achieving the pressure balance of the whole device during operation.

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