公开(公告)号：US07564079B2

公开(公告)日：2009-07-21

申请号：US11354921

申请日：2006-02-16

申请人： Keiji Mabuchi ,  Nobuhiro Karasawa

发明人： Keiji Mabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N5/335 ,  H04N5/21

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

摘要： In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

摘要翻译： 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。

公开(公告)号：US08319867B2

公开(公告)日：2012-11-27

申请号：US12320756

申请日：2009-02-04

申请人： Keiji Mabuchi ,  Nobuhiro Karasawa

发明人： Keiji Mabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N3/14 ,  H01L21/00 ,  H01L31/00 ,  H01L27/14

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

摘要： In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

摘要翻译： 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。

公开(公告)号：US20090190012A1

公开(公告)日：2009-07-30

申请号：US12320756

申请日：2009-02-04

申请人： Keiji Mabuchi ,  Nobuhiro Karasawa

发明人： Keiji Mabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N5/335 ,  H01L31/00

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

摘要： In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

摘要翻译： 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。

公开(公告)号：US20060187327A1

公开(公告)日：2006-08-24

申请号：US11354921

申请日：2006-02-16

申请人： Keiji Mabuchi ,  Nobuhiro Karasawa

发明人： Keiji Mabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

摘要： In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

摘要翻译： 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。

公开(公告)号：US08598640B2

公开(公告)日：2013-12-03

申请号：US13211362

申请日：2011-08-17

申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC分类号： H01L31/113 ,  H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

公开(公告)号：US07812874B2

公开(公告)日：2010-10-12

申请号：US11550492

申请日：2006-10-18

申请人： Shin Iwabuchi ,  Nobuhiro Karasawa

发明人： Shin Iwabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N3/14 ,  H01L31/00

CPC分类号： H04N5/335 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A solid-state imaging apparatus includes a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the substrate, and a readout circuit that is formed on a second surface side of the substrate, which is the opposite side to the first surface side, and processes a signal from the plurality of sensors. The readout circuit includes a plurality of transistors and the transistors are disposed in a region between the pixels in an aligned manner.

摘要翻译： 一种固态成像装置，包括：以基于像素为基础的基板上形成的多个传感器，并且对从基板的第一表面侧入射的光进行光电转换;以及读出电路，其形成在所述基板的第二表面侧 衬底，其是与第一表面侧相反的一侧，并处理来自多个传感器的信号。 读出电路包括多个晶体管，并且晶体管以对准的方式设置在像素之间的区域中。

公开(公告)号：US20090078976A1

公开(公告)日：2009-03-26

申请号：US12277958

申请日：2008-11-25

申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC分类号： H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

公开(公告)号：US08169520B2

公开(公告)日：2012-05-01

申请号：US12611494

申请日：2009-11-03

申请人： Shin Iwabuchi ,  Nobuhiro Karasawa

发明人： Shin Iwabuchi ,  Nobuhiro Karasawa

IPC分类号： H04N3/14 ,  H01L31/00

CPC分类号： H04N5/335 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A solid-state imaging apparatus including a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the substrate, and a readout circuit that is formed on a second surface side of the substrate, which is the opposite side to the first surface side, and processes a signal from the plurality of sensors. The readout circuit includes a plurality of transistors and the transistors are disposed in a region between the pixels in an aligned manner.

公开(公告)号：US08017984B2

公开(公告)日：2011-09-13

申请号：US12323006

申请日：2008-11-25

申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC分类号： H01L31/113 ,  H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

公开(公告)号：US07935563B2

公开(公告)日：2011-05-03

申请号：US12323019

申请日：2008-11-25

申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC分类号： H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。