公开(公告)号：US20240297145A1

公开(公告)日：2024-09-05

申请号：US18592124

申请日：2024-02-29

Applicant: Kioxia Corporation

Inventor： Miki TOSHIMA ,  Sadatoshi MURAKAMI

IPC: H01L23/00 ,  H01L21/762

CPC classification number: H01L24/80 ,  H01L21/76254 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A method of manufacturing a semiconductor device according to one embodiment includes: forming, on a first substrate, a first layer having a refractive index lower than a refractive index of the first substrate; forming, on the first layer, a second layer having a refractive index lower than a refractive index of the first layer; forming a first circuit layer on the second layer; bonding the first and second substrate after forming the first circuit layer; irradiating a back surface of the first substrate with a laser beam after bonding the first substrate and the second substrate; and peeling the first substrate so that the first circuit layer remains on a side of the second substrate after irradiating the back surface of the first substrate with the laser beam.

公开(公告)号：US20240321819A1

公开(公告)日：2024-09-26

申请号：US18592860

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Miki TOSHIMA ,  Sadatoshi MURAKAMI ,  Atsushi OGA

IPC: H01L23/00 ,  H10B80/00

CPC classification number: H01L24/80 ,  H01L24/08 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: preparing a first substrate provided with a first film; forming a second film on or above a second substrate; forming a third film on or above the second film; forming a fourth film on or above the third film; forming a stacked body by bonding a main surface of the first film and a main surface of the fourth film; performing irradiation with a laser beam from a side of the second substrate of the stacked body; and separating the second substrate in a state of including at least portion of the second film. The second film and the fourth film each includes a first material. The third film includes a second material different from the first material. The second film and the third film have different composition. The fourth film and the third film have different composition.

公开(公告)号：US20240292619A1

公开(公告)日：2024-08-29

申请号：US18586775

申请日：2024-02-26

Applicant: Kioxia Corporation

Inventor： Yasuaki NAKATA ,  Masayoshi TAGAMI ,  Koichi SAKATA ,  Miki TOSHIMA

IPC: H10B43/27 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H10B80/00

CPC classification number: H10B43/27 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A semiconductor storage device includes transistors disposed on a substrate; a first metal wiring layer disposed over the transistors at a first position, the first metal wiring layer including a first metal wiring; a stacked body, disposed above the first metal wiring layer, including a first conductive layers and first insulating layers alternately stacked; a pillar including a semiconductor layer that includes a first type impurity in an upper end and penetrates through the stacked body; and a second conductive layer disposed at a second position further from the substrate than the first position, overlapped with the first metal wiring or another metal wiring in the first metal wiring layer, and not electrically connected to any of the transistors, the first conductive layers, or the first metal wiring layer. The second conductive layer has a higher melting point than the first metal wiring.

公开(公告)号：US20210043488A1

公开(公告)日：2021-02-11

申请号：US16810945

申请日：2020-03-06

Applicant: Kioxia Corporation

Inventor： Miki TOSHIMA ,  Osamu YAMANE

IPC: H01L21/68 ,  H01L21/66 ,  H01L23/544 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00 ,  G06K9/20

Abstract: An alignment apparatus according to one embodiment, includes: a first and a second stage; a first and a second detector; a first and a second moving mechanism; and a controller. The first and second stages are configured to respectively hold a first and a second semiconductor substrate on which a first and a second alignment mark are respectively disposed. The first and second moving mechanisms are configured to respectively move the first and second stages relatively to each other. The controller is configured to perform the following (a), (b). (a) The controller control the detectors and the moving mechanisms to cause the first detector to detect the second alignment mark and to cause the second detector to detect the first alignment mark. (b) The controller calculate a position deviation between the substrates in accordance with results of the detections.