公开(公告)号：US09805963B2

公开(公告)日：2017-10-31

申请号：US14875473

申请日：2015-10-05

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Alex Paterson ,  Ying Wu ,  Quan Chau

IPC: H01L21/683 ,  H01T23/00

CPC classification number: H01L21/6833 ,  H01L21/67109

Abstract: Apparatuses, systems, and techniques for providing enhanced electrostatic chucks are provided. Such apparatuses, systems, and techniques may include, for example, a common RF and DC electrode in an electrostatic chuck, connection, at a location external to a semiconductor processing chamber, of a high-voltage DC power source and a high-voltage RF power source to a common conductive pathway leading to an electrostatic chuck in the interior of the semiconductor processing chamber, a very thin dielectric layer located on an upper surface of an electrostatic chuck, and/or an axial thermal choke that may be used to control heat flow within an electrostatic chuck.

公开(公告)号：US20170098566A1

公开(公告)日：2017-04-06

申请号：US14875473

申请日：2015-10-05

Applicant: LAM RESEARCH CORPORATION

Inventor： Maolin Long ,  Alex Paterson ,  Ying Wu ,  Quan Chau

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01L21/67109

Abstract: Apparatuses, systems, and techniques for providing enhanced electrostatic chucks are provided. Such apparatuses, systems, and techniques may include, for example, a common RF and DC electrode in an electrostatic chuck, connection, at a location external to a semiconductor processing chamber, of a high-voltage DC power source and a high-voltage RF power source to a common conductive pathway leading to an electrostatic chuck in the interior of the semiconductor processing chamber, a very thin dielectric layer located on an upper surface of an electrostatic chuck, and/or an axial thermal choke that may be used to control heat flow within an electrostatic chuck.