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公开(公告)号：US12119232B2
公开(公告)日：2024-10-15
申请号：US17847971
申请日：2022-06-23
发明人： Juline Shoeb , Alexander Miller Paterson , Ying Wu
IPC分类号： H01L21/306 , H01J37/305 , H01J37/32 , H01L21/3065
CPC分类号： H01L21/3065 , H01J37/3053 , H01J37/321
摘要： Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.
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公开(公告)号：US20220319856A1
公开(公告)日：2022-10-06
申请号：US17847971
申请日：2022-06-23
发明人： Juline Shoeb , Alexander Miller Paterson , Ying Wu
IPC分类号： H01L21/3065 , H01J37/305 , H01J37/32
摘要： Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.
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公开(公告)号：US20220189738A1
公开(公告)日：2022-06-16
申请号：US17607301
申请日：2020-05-09
发明人： Mathew Evans , Ying Wu , Alexander Paterson
IPC分类号： H01J37/32
摘要： A two-dimensional frequency search grid is defined by a first coordinate axis representing an operating frequency setpoint of an RF signal generator in a first operational state and a second coordinate axis representing an operating frequency setpoint of the RF signal generator in a second operational state. The RF signal generator has a first output power level in the first operational state and a second output power level in the second operational state. The RF signal generator operates in an multi-level RF power pulsing mode by cyclically alternating between the first operational state and the second operational state. An automated search process is performed within the two-dimensional frequency search grid to simultaneously determine an optimum value for the operating frequency setpoint of the RF signal generator in the first operational state and an optimum value for the operating frequency setpoint of the RF signal generator in the second operational state.
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公开(公告)号：US20200335305A1
公开(公告)日：2020-10-22
申请号：US16888613
申请日：2018-11-28
发明人： Maolin Long , Yuhou Wang , Ying Wu , Alex Paterson
摘要： A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.
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公开(公告)号：US10755896B2
公开(公告)日：2020-08-25
申请号：US16779478
申请日：2020-01-31
发明人： Juline Shoeb , Alex Paterson , Ying Wu
IPC分类号： H01J37/32
摘要： Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The RF signal is applied to a substrate support via a match. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. In addition, a direct current (DC) parameter is applied to the substrate support or another RF signal is applied to an upper electrode. The parameter and the frequency of the RF signal applied to the substrate support are simultaneously pulsed with the DC parameter or the RF signal applied to the upper electrode to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.
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公开(公告)号：US20200168438A1
公开(公告)日：2020-05-28
申请号：US16779478
申请日：2020-01-31
发明人： Juline Shoeb , Alex Paterson , Ying Wu
IPC分类号： H01J37/32
摘要： Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The RF signal is applied to a substrate support via a match. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. In addition, a direct current (DC) parameter is applied to the substrate support or another RF signal is applied to an upper electrode. The parameter and the frequency of the RF signal applied to the substrate support are simultaneously pulsed with the DC parameter or the RF signal applied to the upper electrode to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.
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公开(公告)号：US10573494B2
公开(公告)日：2020-02-25
申请号：US16275008
申请日：2019-02-13
发明人： Juline Shoeb , Alex Paterson , Ying Wu
摘要： Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.
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公开(公告)号：US20180262196A1
公开(公告)日：2018-09-13
申请号：US15975072
申请日：2018-05-09
发明人： Ying Wu
IPC分类号： H03K19/003 , H04B1/10 , H04B1/7136 , H01L21/02
CPC分类号： H03K19/00384 , H01L21/02252 , H01L21/02274 , H03K19/00361 , H04B1/7136 , H04B2001/1072
摘要： Systems and methods for frequency and match tuning in one state S1 and frequency tuning in another state S2 are described. The systems and methods include determining one or more variables for the states S1 and S2, and tuning a frequency for the state S1 of a radio frequency (RF) generator based on the one or more variables.
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公开(公告)号：US20180226233A1
公开(公告)日：2018-08-09
申请号：US15947629
申请日：2018-04-06
发明人： Maolin Long , Alex Paterson , Richard Marsh , Ying Wu
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32651 , H01J37/321 , H01J37/32697 , H01L21/6831
摘要： A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.
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公开(公告)号：US09824896B2
公开(公告)日：2017-11-21
申请号：US14932458
申请日：2015-11-04
发明人： Zhongkui Tan , Qian Fu , Ying Wu , Qing Xu , John Drewery
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/308 , H01J37/32 , H01L21/3213 , H01L21/67
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3244 , H01J37/32715 , H01J2237/334 , H01L21/30655 , H01L21/308 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/67069
摘要： A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a first duration, a bias voltage is applied at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level. For a second duration, after completion of the first duration, a bias voltage is applied at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level. The second bias voltage setting is greater than 0 V. The first and second durations are repeated in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.
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