公开(公告)号：US20150214431A1

公开(公告)日：2015-07-30

申请号：US14298826

申请日：2014-06-06

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Hsiu-Mei CHOU ,  Jui-Yi CHU ,  Cheng-Ta KUO

IPC: H01L33/22 ,  H01L33/02 ,  H01L33/06

CPC classification number: H01L33/145 ,  H01L21/2654 ,  H01L21/26586 ,  H01L29/34 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: The invention provides a light-emitting diode device and a method for fabricating the same. The light-emitting diode device includes a metal substrate. A light-emitting diode structure is bonded on the metal substrate. The light-emitting diode structure includes a first type semiconductor substrate and a second type semiconductor layer. The first type semiconductor layer has a first surface and a second surface opposite to the first surface. The second type semiconductor layer is in contact with the metal substrate. A light-emitting layer is disposed between the first type semiconductor substrate and the second type semiconductor layer. A portion of the second surface and a sidewall adjacent to the second surface are uneven roughened surfaces.

Abstract translation: 本发明提供一种发光二极管装置及其制造方法。 发光二极管装置包括金属基板。 发光二极管结构结合在金属基板上。 发光二极管结构包括第一类型半导体衬底和第二类型半导体层。 第一类型半导体层具有与第一表面相对的第一表面和第二表面。 第二类型半导体层与金属基板接触。 发光层设置在第一类型半导体衬底和第二类型半导体层之间。 第二表面的一部分和与第二表面相邻的侧壁是不均匀的粗糙表面。