公开(公告)号：US20170309749A1

公开(公告)日：2017-10-26

申请号：US15643030

申请日：2017-07-06

Applicant: LG Display Co., Ltd.

Inventor： Min-Cheol KIM ,  Youn-Gyoung CHANG ,  Kwon-Shik PARK ,  So-Hyung LEE ,  Ho-Young JUNG ,  Ha-Jin YOO ,  Jeong-Suk YANG

IPC: H01L29/786 ,  H01L21/477 ,  H01L21/02 ,  H01L29/10

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/477 ,  H01L29/1033 ,  H01L29/66969

Abstract: A method for manufacturing a semiconductor device is discussed. The method includes forming a gate electrode on a substrate, forming a gate insulating film over the substrate, depositing an In—Ga—Zn oxide over the gate insulating film while heating the substrate to a temperature of 200 to 300° C., an atomic percent ratio of Zn in the In—Ga—Zn oxide as-deposited being higher than that of In or Ga, heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an active layer crystallized throughout an entire thickness of the active layer, and forming a source electrode and a drain electrode.

公开(公告)号：US20180219099A1

公开(公告)日：2018-08-02

申请号：US15934360

申请日：2018-03-23

Applicant: LG DISPLAY CO., LTD.

Inventor： Min-Cheol KIM ,  Youn-Gyoung CHANG ,  Kwon-Shik PARK ,  So-Hyung LEE ,  Ho-Young JUNG ,  Ha-Jin YOO ,  Jeong-Suk YANG

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/10 ,  H01L21/477

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/477 ,  H01L29/1033 ,  H01L29/66969

Abstract: A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising an oxide including indium, zinc and gallium on the gate insulating film, and overlapping the gate electrode, and a source electrode and a drain electrode that are spaced apart from each other, wherein the active layer is formed from a zinc-rich target material, and an atomic % ratio of indium, zinc and gallium in the active layer is different from an atomic % ratio of the zinc-rich target material.

公开(公告)号：US20160163866A1

公开(公告)日：2016-06-09

申请号：US14937598

申请日：2015-11-10

Applicant: LG Display Co., Ltd.

Inventor： Min-Cheol KIM ,  Youn-Gyoung CHANG ,  Kwon-Shik PARK ,  So-Hyung LEE ,  Ho-Young JUNG ,  Ha-Jin YOO ,  Jeong-Suk YANG

IPC: H01L29/786 ,  H01L21/477 ,  H01L29/10 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/477 ,  H01L29/1033 ,  H01L29/66969

Abstract: An oxide semiconductor crystallization method may include depositing an In—Ga—Zn oxide over the substrate while heating a substrate to a temperature of 200 to 300° C., and heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an oxide semiconductor layer crystallized throughout an entire thickness thereof.

Abstract translation: 氧化物半导体结晶方法可以包括在衬底上沉积In-Ga-Zn氧化物，同时将衬底加热至200至300℃的温度，并在200℃的温度下对沉积的In-Ga-Zn氧化物进行热处理 至350℃，从而形成在其整个厚度上结晶的氧化物半导体层。