公开(公告)号：US20140132526A1

公开(公告)日：2014-05-15

申请号：US13855237

申请日：2013-04-02

Applicant: LG DISPLAY CO., LTD.

Inventor： So-Hyung LEE ,  Jun-Seok OH

IPC: G06F3/041

CPC classification number: G06F3/0412 ,  G06F3/044

Abstract: A display device comprises a touch panel including a plurality of electrode columns that each includes a plurality of electrodes positioned in the electrode column. The display device further comprises a plurality of lines, each of which is connected to a corresponding electrode included in a corresponding one of the plurality of electrode columns. The lengths of the lines within a first electrode column increase as the lines are positioned further from one end of the first electrode column that is not adjacent to the second electrode column in a direction substantially perpendicular to a longitudinal direction of the lines of the first electrode column and the lengths of the lines within a second electrode column decrease as the lines are positioned further from the one end of the first electrode column in the direction substantially perpendicular to a longitudinal direction of the lines of the second electrode column.

Abstract translation: 显示装置包括触摸面板，其包括多个电极柱，每个电极列包括位于电极柱中的多个电极。 显示装置还包括多条线，每条线连接到包括在多个电极柱中相应一个电极柱中的对应电极。 第一电极列中的线的长度随着第一电极柱的不与第二电极柱相邻的一端在与第一电极的线的纵向方向基本垂直的方向上进一步定位而增加 列，并且第二电极列中的线的长度随着线沿着与第二电极柱的线的纵向方向基本垂直的方向定位成远离第一电极柱的一端而减小。

公开(公告)号：US20180219099A1

公开(公告)日：2018-08-02

申请号：US15934360

申请日：2018-03-23

Applicant: LG DISPLAY CO., LTD.

Inventor： Min-Cheol KIM ,  Youn-Gyoung CHANG ,  Kwon-Shik PARK ,  So-Hyung LEE ,  Ho-Young JUNG ,  Ha-Jin YOO ,  Jeong-Suk YANG

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/10 ,  H01L21/477

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/477 ,  H01L29/1033 ,  H01L29/66969

Abstract: A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising an oxide including indium, zinc and gallium on the gate insulating film, and overlapping the gate electrode, and a source electrode and a drain electrode that are spaced apart from each other, wherein the active layer is formed from a zinc-rich target material, and an atomic % ratio of indium, zinc and gallium in the active layer is different from an atomic % ratio of the zinc-rich target material.

公开(公告)号：US20160163866A1

公开(公告)日：2016-06-09

申请号：US14937598

申请日：2015-11-10

Applicant: LG Display Co., Ltd.

Inventor： Min-Cheol KIM ,  Youn-Gyoung CHANG ,  Kwon-Shik PARK ,  So-Hyung LEE ,  Ho-Young JUNG ,  Ha-Jin YOO ,  Jeong-Suk YANG

IPC: H01L29/786 ,  H01L21/477 ,  H01L29/10 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/477 ,  H01L29/1033 ,  H01L29/66969

Abstract: An oxide semiconductor crystallization method may include depositing an In—Ga—Zn oxide over the substrate while heating a substrate to a temperature of 200 to 300° C., and heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an oxide semiconductor layer crystallized throughout an entire thickness thereof.

Abstract translation: 氧化物半导体结晶方法可以包括在衬底上沉积In-Ga-Zn氧化物，同时将衬底加热至200至300℃的温度，并在200℃的温度下对沉积的In-Ga-Zn氧化物进行热处理 至350℃，从而形成在其整个厚度上结晶的氧化物半导体层。

公开(公告)号：US20140313435A1

公开(公告)日：2014-10-23

申请号：US14144151

申请日：2013-12-30

Applicant: LG DISPLAY CO., LTD.

Inventor： Sung-Yong CHO ,  So-Hyung LEE ,  Jae-Gyun LEE

IPC: G06F3/047 ,  H01J9/20

CPC classification number: H01J9/20 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04111 ,  G06F2203/04112

Abstract: A color filter substrate for a display device includes a first protection layer on a plurality of touch sensing electrodes and touch driving electrode arrays; a bridge on the first protection layer and connecting the plurality of touch sensing electrodes; a second protection layer on the bridge; a black matrix on the second protection layer; a color filter layer on the black matrix, wherein the plurality of touch sensing electrodes include a first mesh pattern formed by crossing of first metal lines, the plurality of touch driving electrode arrays include a plurality of second mesh patterns formed by crossing of second metal lines, wherein the black matrix is formed at regions corresponding to the first and second metal lines, and wherein a line width of the black matrix is equal to or greater than each of the metal lines forming the first and second mesh patterns.

Abstract translation: 一种用于显示装置的滤色器基板，包括在多个触摸感测电极和触摸驱动电极阵列上的第一保护层; 在所述第一保护层上的桥，并连接所述多个触摸感测电极; 桥上的第二保护层; 第二保护层上的黑色矩阵; 所述黑色矩阵上的滤色器层，其中所述多个触摸感测电极包括由第一金属线交叉形成的第一网状图案，所述多个触摸驱动电极阵列包括通过第二金属线 其特征在于，所述黑色矩阵形成在与所述第一和第二金属线对应的区域，所述黑色矩阵的线宽度等于或大于形成所述第一和第二网状图案的各金属线。

公开(公告)号：US20170309749A1

公开(公告)日：2017-10-26

申请号：US15643030

申请日：2017-07-06

Applicant: LG Display Co., Ltd.

Inventor： Min-Cheol KIM ,  Youn-Gyoung CHANG ,  Kwon-Shik PARK ,  So-Hyung LEE ,  Ho-Young JUNG ,  Ha-Jin YOO ,  Jeong-Suk YANG

IPC: H01L29/786 ,  H01L21/477 ,  H01L21/02 ,  H01L29/10

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/477 ,  H01L29/1033 ,  H01L29/66969

Abstract: A method for manufacturing a semiconductor device is discussed. The method includes forming a gate electrode on a substrate, forming a gate insulating film over the substrate, depositing an In—Ga—Zn oxide over the gate insulating film while heating the substrate to a temperature of 200 to 300° C., an atomic percent ratio of Zn in the In—Ga—Zn oxide as-deposited being higher than that of In or Ga, heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an active layer crystallized throughout an entire thickness of the active layer, and forming a source electrode and a drain electrode.