公开(公告)号：US09236495B2

公开(公告)日：2016-01-12

申请号：US13729539

申请日：2012-12-28

Applicant: LG Display Co., Ltd.

Inventor： HyunSik Seo ,  MoonGoo Kim ,  BongChul Kim ,  JeongHoon Lee ,  Changll Ryoo

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/78693 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: There are provided an oxide TFT, a method for fabricating a TFT, an array substrate for a display device having a TFT, and a method for fabricating the display device. The oxide thin film transistor includes: a gate electrode formed on a substrate; a gate insulating layer formed on the entire surface of the substrate including the gate electrode; an active layer pattern formed on the gate insulating layer above the gate electrode and completely overlapping the gate electrode; an etch stop layer pattern formed on the active layer pattern and the gate insulating layer; and a source electrode and a drain electrode formed on the gate insulating layer including the etch stop layer pattern and the active layer pattern and spaced apart from one another, and overlapping both sides of the etch stop layer pattern and the underlying active layer pattern.

Abstract translation: 提供了一种氧化物TFT，一种制造TFT的方法，一种具有TFT的显示装置用阵列基板及其制造方法。 氧化物薄膜晶体管包括：形成在基板上的栅电极; 栅极绝缘层，形成在包括栅电极的基板的整个表面上; 形成在栅极电极上方的栅极绝缘层上并与栅电极完全重叠的有源层图案; 形成在有源层图案和栅极绝缘层上的蚀刻停止层图案; 以及形成在包括蚀刻停止层图案和有源层图案并且彼此间隔开的栅绝缘层上并且与蚀刻停止层图案和下面的有源层图案重叠的两侧的源电极和漏电极。