公开(公告)号：US09711574B2

公开(公告)日：2017-07-18

申请号：US14998111

申请日：2015-12-23

Applicant: LG Display Co., Ltd.

Inventor： Ilgi Jeong ,  JeongHoon Lee

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3246 ,  H01L27/3213 ,  H01L27/3216 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5225 ,  H01L51/56 ,  H01L2227/323

Abstract: Embodiments relate to an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a pixel area that includes at least a first sub pixel area. The first sub pixel area includes a color filter, a first overcoat element on the color filter, wherein a portion of the color filter at an edge portion of the first sub pixel area is not covered by the first overcoat element, and an electrode disposed on the pixel area, wherein the electrode is on the portion of the color filter not covered by the first overcoat element.

公开(公告)号：US20130313530A1

公开(公告)日：2013-11-28

申请号：US13729539

申请日：2012-12-28

Applicant: LG DISPLAY CO., LTD.

Inventor： HyunSik Seo ,  MoonGoo Kim ,  BongChul Kim ,  JeongHoon Lee ,  ChangIl Ryoo

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: There are provided an oxide TFT, a method for fabricating a TFT, an array substrate for a display device having a TFT, and a method for fabricating the display device. The oxide thin film transistor includes: a gate electrode formed on a substrate; a gate insulating layer formed on the entire surface of the substrate including the gate electrode; an active layer pattern formed on the gate insulating layer above the gate electrode and completely overlapping the gate electrode; an etch stop layer pattern formed on the active layer pattern and the gate insulating layer; and a source electrode and a drain electrode formed on the gate insulating layer including the etch stop layer pattern and the active layer pattern and spaced apart from one another, and overlapping both sides of the etch stop layer pattern and the underlying active layer pattern.

Abstract translation: 提供了一种氧化物TFT，一种制造TFT的方法，一种具有TFT的显示装置用阵列基板及其制造方法。 氧化物薄膜晶体管包括：形成在基板上的栅电极; 栅极绝缘层，形成在包括栅电极的基板的整个表面上; 形成在栅极电极上方的栅极绝缘层上并与栅电极完全重叠的有源层图案; 形成在有源层图案和栅极绝缘层上的蚀刻停止层图案; 以及形成在包括蚀刻停止层图案和有源层图案并且彼此间隔开的栅绝缘层上并且与蚀刻停止层图案和下面的有源层图案重叠的两侧的源电极和漏电极。

公开(公告)号：US20160190218A1

公开(公告)日：2016-06-30

申请号：US14998111

申请日：2015-12-23

Applicant: LG Display Co., Ltd.

Inventor： Ilgi Jeong ,  JeongHoon Lee

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3246 ,  H01L27/3213 ,  H01L27/3216 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5225 ,  H01L51/56 ,  H01L2227/323

Abstract: Embodiments relate to an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a pixel area that includes at least a first sub pixel area. The first sub pixel area includes a color filter, a first overcoat element on the color filter, wherein a portion of the color filter at an edge portion of the first sub pixel area is not covered by the first overcoat element, and an electrode disposed on the pixel area, wherein the electrode is on the portion of the color filter not covered by the first overcoat element.

Abstract translation: 实施例涉及有机发光显示装置及其制造方法。 有机发光显示装置包括至少包括第一子像素区域的像素区域。 第一子像素区域包括滤色器，滤色器上的第一外涂层元件，其中在第一子像素区域的边缘部分处的滤色器的一部分不被第一外涂层元件覆盖，并且电极设置在 像素区域，其中电极位于未被第一外涂层元件覆盖的滤色器的部分上。

公开(公告)号：US09236495B2

公开(公告)日：2016-01-12

申请号：US13729539

申请日：2012-12-28

Applicant: LG Display Co., Ltd.

Inventor： HyunSik Seo ,  MoonGoo Kim ,  BongChul Kim ,  JeongHoon Lee ,  Changll Ryoo

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/78693 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: There are provided an oxide TFT, a method for fabricating a TFT, an array substrate for a display device having a TFT, and a method for fabricating the display device. The oxide thin film transistor includes: a gate electrode formed on a substrate; a gate insulating layer formed on the entire surface of the substrate including the gate electrode; an active layer pattern formed on the gate insulating layer above the gate electrode and completely overlapping the gate electrode; an etch stop layer pattern formed on the active layer pattern and the gate insulating layer; and a source electrode and a drain electrode formed on the gate insulating layer including the etch stop layer pattern and the active layer pattern and spaced apart from one another, and overlapping both sides of the etch stop layer pattern and the underlying active layer pattern.

Abstract translation: 提供了一种氧化物TFT，一种制造TFT的方法，一种具有TFT的显示装置用阵列基板及其制造方法。 氧化物薄膜晶体管包括：形成在基板上的栅电极; 栅极绝缘层，形成在包括栅电极的基板的整个表面上; 形成在栅极电极上方的栅极绝缘层上并与栅电极完全重叠的有源层图案; 形成在有源层图案和栅极绝缘层上的蚀刻停止层图案; 以及形成在包括蚀刻停止层图案和有源层图案并且彼此间隔开的栅绝缘层上并且与蚀刻停止层图案和下面的有源层图案重叠的两侧的源电极和漏电极。