ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
    1.
    发明申请
    ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
    阵列基板及其制造方法

    公开(公告)号:US20140159033A1

    公开(公告)日:2014-06-12

    申请号:US13914773

    申请日:2013-06-11

    CPC classification number: H01L29/66969 H01L27/1225 H01L29/7869

    Abstract: An array substrate includes a substrate; an oxide semiconductor layer on the substrate, the oxide semiconductor layer including an active area and source and drain areas at both sides of the active area; a gate insulating layer and a gate electrode sequentially on the active area of the oxide semiconductor layer; an inter insulating layer on the gate electrode and having first and second semiconductor contact holes that expose the source and drain areas respectively; and source and drain electrodes on the inter insulating layer and contacting the source and drain areas through the first and second semiconductor contact holes, respectively, wherein the first and second semiconductor contact holes are disposed in two regions.

    Abstract translation: 阵列基板包括基板; 在所述基板上的氧化物半导体层,所述氧化物半导体层包括有源区域和所述有源区域的两侧的源极和漏极区域; 栅极绝缘层和栅极电极,其顺序地在氧化物半导体层的有源区上; 栅极上的绝缘层,具有分别暴露出源区和漏区的第一和第二半导体接触孔; 以及源绝缘层和漏电极,并且分别通过第一和第二半导体接触孔接触源区和漏区,其中第一和第二半导体接触孔设置在两个区域中。

    Organic Light Emitting Diode Display Device and Method of Fabricating the Same
    2.
    发明申请
    Organic Light Emitting Diode Display Device and Method of Fabricating the Same 有权
    有机发光二极管显示装置及其制造方法

    公开(公告)号:US20160204180A1

    公开(公告)日:2016-07-14

    申请号:US15077733

    申请日:2016-03-22

    Abstract: An organic light emitting diode display device comprises a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer. The device further includes a storage capacitor including a first capacitor electrode electrically coupled to a drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to a gate electrode of the driving thin film transistor. The device also includes an organic light emitting diode connected to the drain electrode of the driving transistor. The gate insulating layer has at least one hole in a region where the gate insulating layer overlaps the second semiconductor layer, thereby exposing the second semiconductor layer to the second capacitor electrode.

    Abstract translation: 有机发光二极管显示装置包括驱动薄膜晶体管,其包括形成在第一半导体层上的第一半导体层,栅极绝缘层。 该器件还包括存储电容器,该存储电容器包括电耦合到驱动薄膜晶体管的漏电极的第一电容器电极,形成在第一电容器电极上的缓冲层,形成在缓冲层上的第二半导体层和第二电容器电极 形成在第二半导体层上并电耦合到驱动薄膜晶体管的栅电极。 该器件还包括连接到驱动晶体管的漏电极的有机发光二极管。 栅极绝缘层在栅极绝缘层与第二半导体层重叠的区域中具有至少一个孔,从而将第二半导体层暴露于第二电容器电极。

    Organic Light Emitting Diode Display Device and Method of Fabricating the Same

    公开(公告)号:US20200219770A1

    公开(公告)日:2020-07-09

    申请号:US16820291

    申请日:2020-03-16

    Abstract: An organic light emitting diode display device comprises a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer. The device further includes a storage capacitor including a first capacitor electrode electrically coupled to a drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to a gate electrode of the driving thin film transistor. The device also includes an organic light emitting diode connected to the drain electrode of the driving transistor. The gate insulating layer has at least one hole in a region where the gate insulating layer overlaps the second semiconductor layer, thereby exposing the second semiconductor layer to the second capacitor electrode.

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