公开(公告)号：US09847351B2

公开(公告)日：2017-12-19

申请号：US15006123

申请日：2016-01-26

申请人： UNITED MICROELECTRONICS CORP.

发明人： Lanxiang Wang ,  Hong Liao ,  Chao Jiang

IPC分类号： H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423 ,  H01L21/77

CPC分类号： H01L27/1225 ,  H01L21/77 ,  H01L27/1218 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L2021/775

摘要： A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region; forming a gate layer on the substrate; forming a first gate dielectric layer on the gate layer; forming a first channel layer on the first region and a second channel layer on the second region; and forming a first source/drain on the first channel layer and a second source/drain on the second channel layer.

公开(公告)号：US09768068B2

公开(公告)日：2017-09-19

申请号：US15223959

申请日：2016-07-29

申请人： LG Display Co., Ltd

发明人： Sun-Hyun Choi ,  Ki-Taeg Shin ,  Tae-Yun Roh

IPC分类号： H01L29/04 ,  H01L21/78 ,  H01L27/12 ,  H01L21/66 ,  H01L21/77 ,  G02F1/1362

CPC分类号： H01L21/78 ,  G02F1/136204 ,  G02F2001/136254 ,  H01L22/32 ,  H01L27/1244 ,  H01L27/1259 ,  H01L2021/775

摘要： Disclosed is a display device that includes an array substrate that includes a display region and a first non-display region, and includes a signal line connected to a pixel in the display region; a first signal transfer line that is at the first non-display region and transfers a test signal, and a second signal transfer line that transfers a test enable signal; a connection pattern connected to the first signal transfer line; a test transistor that is connected between the signal line and the connection pattern, and is connected to the second signal transfer line; and an electrostatic induction element that includes a dummy device in the form of either a dummy pattern and/or a dummy test transistor, the dummy pattern including a dummy connection pattern connected to the first signal transfer line, the dummy test transistor connected to the second signal transfer line.

公开(公告)号：US20170243902A1

公开(公告)日：2017-08-24

申请号：US15591061

申请日：2017-05-09

申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.

发明人： Wenhui Li

IPC分类号： H01L27/12 ,  H01L29/423 ,  H01L29/45 ,  H01L29/417 ,  H01L29/49 ,  H01L23/535

CPC分类号： H01L27/1288 ,  H01L21/77 ,  H01L23/535 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L51/525 ,  H01L51/56 ,  H01L2021/775 ,  H01L2227/323

摘要： A TFT substrate includes a base plate on which first and second gate electrodes respectively corresponding to first and second TFTs are formed. A gate insulation layer, a semiconductor layer, and an etch stop layer are sequentially formed on the base plate and the first and second electrodes. A single photolithographic process is conducted simultaneously on the gate insulation layer, the semiconductor layer, and the etch stop layer with the same gray tone mask to form separate semiconductor portions for the two TFTs and also form contact holes in the etch stop layer and the gate insulation layer to receive sources and drains of the two TFTs to be deposited therein and in contact with the two semiconductor portions.

公开(公告)号：US20160351601A1

公开(公告)日：2016-12-01

申请号：US14407865

申请日：2014-11-28

申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.

发明人： Xiaowen LV ,  Wenhui LI ,  Longqiang SHI ,  Chih-yu SU ,  Chih-yuan TSENG

IPC分类号： H01L27/12 ,  C23C30/00 ,  H01L29/786

CPC分类号： H01L27/1262 ,  C23C30/00 ,  H01L21/77 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2021/775 ,  H01L2227/323

摘要： A manufacturing method and a manufacturing equipment of a thin film transistor substrate are provided. In the manufacturing method, after forming a gate and a gate insulating layer of a thin film transistor, a semiconductor layer and a first protection layer are sequentially deposited. After patterning the first protection layer, the patterned first protection layer is used as a mask to pattern the semiconductor layer to form a semiconductor channel of the thin film transistor. By the above solution, the invention can reduce the number of mask and therefore is beneficial to reduce the cost.

摘要翻译： 提供薄膜晶体管基板的制造方法和制造装置。 在制造方法中，在形成薄膜晶体管的栅极和栅极绝缘层之后，依次沉积半导体层和第一保护层。 在图案化第一保护层之后，将图案化的第一保护层用作掩模以图案化半导体层以形成薄膜晶体管的半导体沟道。 通过上述解决方案，本发明可以减少掩模的数量，因此有益于降低成本。

公开(公告)号：US09502444B2

公开(公告)日：2016-11-22

申请号：US14429640

申请日：2014-06-27

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.

发明人： Liyan Xu ,  Ming Tian ,  Junwei Wang

IPC分类号： H01L21/027 ,  H01L21/314 ,  H01L27/12 ,  G02F1/1333 ,  G03F7/00 ,  H01L21/77 ,  G02F1/1368

CPC分类号： H01L27/1262 ,  G02F1/1333 ,  G02F1/1368 ,  G03F7/00 ,  H01L21/77 ,  H01L27/1248 ,  H01L2021/775

摘要： A method for forming a thin-film layer pattern, a display substrate and a manufacturing method thereof, and a display device are provided. The method for forming the thin-film layer pattern comprises: forming a first thin-film layer to be patterned on a substrate; forming a first overcoat (OC) layer on a surface of the first thin-film layer; forming a first overcoat layer pattern by beam melting; and removing the first thin-film layer not covered by the first overcoat layer pattern to form a first thin-film layer pattern. The method adopts beam melting process and hence can improve the accuracy and the resolution of the display substrate, improve the product quality and reduce the manufacturing cost.

摘要翻译： 提供了形成薄膜层图案的方法，显示基板及其制造方法以及显示装置。 形成薄膜层图案的方法包括：在基板上形成待图案化的第一薄膜层; 在所述第一薄膜层的表面上形成第一外涂层（OC）层; 通过束熔化形成第一外涂层图案; 并且除去未被第一外涂层图案覆盖的第一薄膜层以形成第一薄膜层图案。 该方法采用光束熔化工艺，可以提高显示基板的精度和分辨率，提高产品质量，降低制造成本。

公开(公告)号：US09287137B2

公开(公告)日：2016-03-15

申请号：US13630901

申请日：2012-09-28

申请人： Qunhua Wang ,  Weijie Wang ,  Young Jin Choi ,  Seon-Mee Cho ,  Yi Cui ,  Beom Soo Park ,  Soo Young Choi

发明人： Qunhua Wang ,  Weijie Wang ,  Young Jin Choi ,  Seon-Mee Cho ,  Yi Cui ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L21/316 ,  H01L29/786 ,  H01L21/31 ,  H01L21/02 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56 ,  H01L29/66 ,  H01L21/77

CPC分类号： H01L21/31 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02675 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/7869 ,  H01L2021/775

摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.

摘要翻译： 本公开的实施例通常提供在TFT器件中形成含硅层的方法。 硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。 通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。 惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅 - 氧键保留以形成基本上不含氢的含硅层。

公开(公告)号：US09257560B2

公开(公告)日：2016-02-09

申请号：US14246407

申请日：2014-04-07

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hiroki Adachi ,  Kayo Kumakura

IPC分类号： H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/78603 ,  H01L21/84 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1262 ,  H01L29/78606 ,  H01L2021/775

摘要： Provided is a flexible device with fewer defects caused by a crack or a flexible device having high productivity. A semiconductor device including: a display portion over a flexible substrate, including a transistor and a display element; a semiconductor layer surrounding the display portion; and an insulating layer over the transistor and the semiconductor layer. When seen in a direction perpendicular to a surface of the flexible substrate, an end portion of the substrate is substantially aligned with an end portion of the semiconductor layer, and an end portion of the insulating layer is positioned over the semiconductor layer.

摘要翻译： 提供了一种具有由裂纹引起的缺陷或具有高生产率的柔性装置的柔性装置。 一种半导体器件，包括：柔性基板上的显示部分，包括晶体管和显示元件; 围绕显示部的半导体层; 以及在晶体管和半导体层上的绝缘层。 当在与柔性基板的表面垂直的方向上观察时，基板的端部与半导体层的端部大致对准，绝缘层的端部位于半导体层的上方。

公开(公告)号：US20160020231A1

公开(公告)日：2016-01-21

申请号：US14429640

申请日：2014-06-27

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.

发明人： Liyan XU ,  Ming TIAN ,  Junwei WANG

IPC分类号： H01L27/12

CPC分类号： H01L27/1262 ,  G02F1/1333 ,  G02F1/1368 ,  G03F7/00 ,  H01L21/77 ,  H01L27/1248 ,  H01L2021/775

摘要： A method for forming a thin-film layer pattern, a display substrate and a manufacturing method thereof, and a display device are provided. The method for forming the thin-film layer pattern comprises: forming a first thin-film layer to be patterned on a substrate; forming a first overcoat (OC) layer on a surface of the first thin-film layer; forming a first overcoat layer pattern by beam melting; and removing the first thin-film layer not covered by the first overcoat layer pattern to form a first thin-film layer pattern. The method adopts beam melting process and hence can improve the accuracy and the resolution of the display substrate, improve the product quality and reduce the manufacturing cost.

摘要翻译： 提供了形成薄膜层图案的方法，显示基板及其制造方法以及显示装置。 形成薄膜层图案的方法包括：在基板上形成待图案化的第一薄膜层; 在所述第一薄膜层的表面上形成第一外涂层（OC）层; 通过束熔化形成第一外涂层图案; 并且除去未被第一外涂层图案覆盖的第一薄膜层以形成第一薄膜层图案。 该方法采用光束熔化工艺，可以提高显示基板的精度和分辨率，提高产品质量，降低制造成本。

公开(公告)号：US09040420B2

公开(公告)日：2015-05-26

申请号：US11276349

申请日：2006-02-24

申请人： Eiji Sugiyama ,  Yoshitaka Dozen ,  Yumiko Fukumoto ,  Hideaki Kuwabara ,  Shunpei Yamazaki

发明人： Eiji Sugiyama ,  Yoshitaka Dozen ,  Yumiko Fukumoto ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC分类号： H01L21/44 ,  H01L21/78 ,  H01L27/12 ,  H01L21/67

CPC分类号： H01L21/7806 ,  H01L21/31111 ,  H01L21/6708 ,  H01L21/67132 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2021/775

摘要： The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while an etching gas for a peeling layer is blown to the peeling layer in an atmosphere of an etching gas. Specifically, an etching gas is blown to a part to be peeled while a layer to be peeled is torn off from a substrate. Alternatively, peeling is performed in an etchant for a peeling layer while supplying an etchant to the peeling layer.

摘要翻译： 本发明的目的是在短时间内进行剥离处理。 在剥离层暴露于蚀刻气体的气氛的同时进行剥离。 或者，在蚀刻气体的气氛中将用于剥离层的蚀刻气体吹向剥离层的同时进行剥离。 具体地说，将蚀刻气体吹向待剥离的部分，同时从基板上撕下被剥离层。 或者，在用于剥离层的蚀刻剂中进行剥离，同时向剥离层供给蚀刻剂。

公开(公告)号：US20140346495A1

公开(公告)日：2014-11-27

申请号：US13902514

申请日：2013-05-24

申请人： Chan- Long Shieh ,  Gang Yu ,  Fatt Foong ,  Juergen Musolf

发明人： Chan- Long Shieh ,  Gang Yu ,  Fatt Foong ,  Juergen Musolf

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/66969 ,  H01L21/02063 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76895 ,  H01L27/1225 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2021/775

摘要： A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ. The layer of amorphous metal oxide has a mobility above 40 cm2/Vs and a carrier concentration in a range of approximately 1018 cm−3 to approximately 5×1019 cm−3. Source/drain contacts are positioned on the protective layer and in electrical contact therewith.

摘要翻译： 制造稳定的高迁移率无定形MOTFT的方法包括提供其上形成有栅极的基板和位于栅极上方的栅介质层的步骤。 通过溅射将载流子传输结构沉积在栅极介电层上。 载流子传输结构包括邻近栅极电介质的非晶高迁移率金属氧化物层，以及沉积在无氧和原位沉积的无定形高迁移率金属氧化物层上的相对惰性的材料保护层。 非晶金属氧化物层的迁移率高于40cm 2 / Vs，载流子浓度在约1018cm-3至约5×1019cm-3的范围内。 源极/漏极触点位于保护层上并与其电接触。