公开(公告)号：US20180247991A1

公开(公告)日：2018-08-30

申请号：US15957139

申请日：2018-04-19

Applicant: LG Display Co., Ltd.

Inventor： Kummi OH ,  Hyeseon EOM ,  Shunyoung YANG ,  Jeoungin LEE

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3262 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/3246 ,  H01L27/3248 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56

Abstract: Provided are a thin film transistor (TFT) substrate and a method of manufacturing the same. A TFT substrate includes: a substrate defining a pixel area, a first TFT including: an oxide semiconductor layer, a first gate electrode on the oxide semiconductor layer, a first source electrode, and a first drain electrode, a second TFT including: a second gate electrode, a polycrystalline semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a first gate insulating layer under the first gate electrode and the second gate electrode, the first gate insulating layer covering the oxide semiconductor layer, a second gate insulating layer under the polycrystalline semiconductor layer, the second gate insulating layer covering the first gate electrode and the second gate electrode, and an intermediate insulating layer on the first gate electrode and the polycrystalline semiconductor layer, the intermediate insulating layer including a nitride layer.

公开(公告)号：US20230045741A1

公开(公告)日：2023-02-09

申请号：US17790100

申请日：2020-09-15

Applicant: LG Display Co., Ltd.

Inventor： Kummi OH ,  Seunghyo KO ,  Hyunjin KIM ,  Sunwook Ko

IPC: H01L27/15 ,  H01L33/00

Abstract: According to the present specification, provided is a micro LED display device. The micro LED display device includes a substrate, a supply voltage line on the substrate, and a micro LED area disposed on the supply voltage line. At least one portion of the supply voltage line is disposed at the vertical lower part of the micro LED area.

公开(公告)号：US20170154941A1

公开(公告)日：2017-06-01

申请号：US15359922

申请日：2016-11-23

Applicant: LG Display Co., Ltd.

Inventor： Kummi OH ,  Hyeseon EOM ,  Shunyoung YANG ,  Jeoungin LEE

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3262 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3246 ,  H01L27/3248 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56

Abstract: Provided are a thin film transistor (TFT) substrate and a method of manufacturing the same. A TFT substrate includes: a substrate defining a pixel area, a first TFT including: an oxide semiconductor layer, a first gate electrode on the oxide semiconductor layer, a first source electrode, and a first drain electrode, a second TFT including: a second gate electrode, a polycrystalline semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a first gate insulating layer under the first gate electrode and the second gate electrode, the first gate insulating layer covering the oxide semiconductor layer, a second gate insulating layer under the polycrystalline semiconductor layer, the second gate insulating layer covering the first gate electrode and the second gate electrode, and an intermediate insulating layer on the first gate electrode and the polycrystalline semiconductor layer, the intermediate insulating layer including a nitride layer.