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公开(公告)号：US20150243688A1
公开(公告)日：2015-08-27
申请号：US14629538
申请日：2015-02-24
Applicant: LG Display Co., Ltd.
Inventor： Youngjang LEE , Kyungmo SON , Seongpil CHO , Jaehoon PARK , Sohyung LEE , Sangsoon NOH , Moonho PARK , Sungjin LEE , Seunghyo KO , Mijin JEONG
CPC classification number: H01L27/1251 , H01L27/1222 , H01L27/1225 , H01L27/1237 , H01L27/3262 , H01L29/7869
Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.
Abstract translation: 提供薄膜晶体管基板和使用其的显示器。 显示器包括：第一区域，第二区域，设置在第一区域的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极， 以及第一漏极，设置在所述第二区的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅极，所述第二栅电极上的氧化物半导体层，第二源极和第二漏极， 显示装置的除了第二区域的区域上的氮化物层，覆盖第一栅电极的氮化物层和设置在第一栅电极和第二栅电极之上的氧化物层。
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公开(公告)号：US20240021659A1
公开(公告)日：2024-01-18
申请号：US18114033
申请日：2023-02-24
Applicant: LG DISPLAY CO., LTD.
Inventor： SunWook KO , Hyunjin KIM , KumMi OH , Seunghyo KO
IPC: H01L27/15 , H01L33/62 , H01L29/786
CPC classification number: H01L27/156 , H01L33/62 , H01L29/78696
Abstract: A display device can include a display panel including a first area and a second area surrounded by the first area, where each of the first area and the second area includes a plurality of subpixels. The display device can further include a plurality of first driving thin film transistors disposed respectively in the plurality of subpixels positioned in the first area, and a plurality of second driving thin film transistors disposed respectively in the plurality of subpixels positioned in the second area. The second area can include a transparent area. For at least one of the plurality of the second driving thin film transistors, a length of the channel region of the second driving thin film transistor can be shorter than a length of the channel region of the first driving thin film transistor.
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公开(公告)号：US20220262854A1
公开(公告)日：2022-08-18
申请号：US17736656
申请日：2022-05-04
Applicant: LG Display Co., Ltd.
Inventor： MoonHo PARK , Seunghyo KO
Abstract: A light emitting diode display apparatus includes a display substrate having a plurality of subpixel areas; and a light emitting diode disposed on the display substrate to correspond to a corresponding subpixel area of the plurality of subpixel areas, wherein the light emitting diode includes an emission area and a non-emission area adjacent to the emission area, wherein the light emitting diode includes a trench part provided to overlap a boundary between the emission area and the non-emission area, and wherein the trench part is configured such that a side light emitted from the emission area is reflected in a display direction of the light emitting diode display apparatus.
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公开(公告)号：US20240321935A1
公开(公告)日：2024-09-26
申请号：US18732363
申请日：2024-06-03
Applicant: LG Display Co., Ltd.
Inventor： SunWook KO , Hyunjin KIM , KumMi OH , Seunghyo KO
IPC: H01L27/15 , H01L29/786 , H01L33/62
CPC classification number: H01L27/156 , H01L29/78696 , H01L33/62
Abstract: A display device in one example includes a display panel comprising a first area including at least one first subpixel and a second area including at least one second subpixel, a first driving thin film transistor disposed in the at least one first subpixel, and a second driving thin film transistor disposed in the at least one second subpixel. The number of the at least one first subpixel disposed per a unit area in the first area is greater than the number of the at least one second subpixel disposed per a unit area in the second area. Further, the width of a channel region of the second driving thin film transistor is greater than the width of a channel region of the first driving thin film transistor.
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公开(公告)号：US20230081823A1
公开(公告)日：2023-03-16
申请号：US17902655
申请日：2022-09-02
Applicant: LG Display Co., Ltd.
Inventor： SoYoung NOH , Seunghyo KO , KyeongJu MOON
IPC: H01L27/12
Abstract: A thin film transistor substrate can include a thin film transistor on a base substrate, and a capacitor connected to the thin film transistor. The thin film transistor can include an active layer on the base substrate, and a gate electrode spaced apart from the active layer to at least partially overlap the active layer. The capacitor can include a first capacitor electrode disposed on a same layer as the active layer of the thin film transistor, and a second capacitor electrode disposed on a same layer as the gate electrode and overlapping with the first capacitor electrode. The first capacitor electrode can include an active material layer made of a same material as the active layer of the thin film transistor, and a metal-containing layer disposed on the active material layer. The metal-containing layer can include a metal different than the active material layer and can absorb hydrogen.
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Patent Agency Ranking
公开(公告)号：US20230070485A1
公开(公告)日：2023-03-09
申请号：US17897803
申请日：2022-08-29
Applicant: LG DISPLAY CO., LTD.
Inventor： KyeongJu MOON , Seunghyo KO , Nuri ON
IPC: H01L29/786 , H01L29/66
Abstract: A thin film transistor includes an active layer of an oxide semiconductor, a gate electrode provided on or under the active layer while being spaced apart from the active layer and overlapping with at least a portion of the active layer, and a gate insulating film between the active layer and the gate electrode, wherein the active layer includes copper (Cu).
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公开(公告)号：US20230045741A1
公开(公告)日：2023-02-09
申请号：US17790100
申请日：2020-09-15
Applicant: LG Display Co., Ltd.
Inventor： Kummi OH , Seunghyo KO , Hyunjin KIM , Sunwook Ko
Abstract: According to the present specification, provided is a micro LED display device. The micro LED display device includes a substrate, a supply voltage line on the substrate, and a micro LED area disposed on the supply voltage line. At least one portion of the supply voltage line is disposed at the vertical lower part of the micro LED area.
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公开(公告)号：US20210193732A1
公开(公告)日：2021-06-24
申请号：US17119221
申请日：2020-12-11
Applicant: LG DISPLAY CO., LTD.
Inventor： SunWook KO , Hyunjin KIM , KumMi OH , Seunghyo KO
IPC: H01L27/15 , H01L29/786 , H01L33/62
Abstract: Embodiments of the disclosure are related to a display device, in a structure where an optical sensor is disposed on an opposite side of a side displaying an image and overlapping an active area of a display panel, as increasing a transmittance by implementing an area overlapping to the optical sensor as a low resolution area, a sensing function by the optical sensor located in the active area could be implemented. Furthermore, by implementing a number of a gate electrode or a width of a channel region or the like of a driving transistor disposed in the low resolution area to be different from those of a driving transistor disposed in a high resolution area, compensating a luminance of the low resolution area and preventing a deviation of a luminance between the low resolution area and the high resolution area can be achieved.
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公开(公告)号：US20230079262A1
公开(公告)日：2023-03-16
申请号：US17941257
申请日：2022-09-09
Applicant: LG DISPLAY CO., LTD.
Inventor： SoYoung NOH , Seunghyo KO
IPC: H01L29/786 , H01L29/66
Abstract: A thin film transistor, a fabricating method of the thin film transistor and a display device comprising the thin film transistor are provided, in which the thin film transistor includes an active layer on a substrate, and a gate electrode spaced apart from the active layer and at least partially overlapped with the active layer, wherein the active layer includes fluorine (F) and has a first surface in a direction opposite to the substrate, the active layer has a concentration gradient of fluorine (F) in which a concentration gradient of fluorine (F) along a direction parallel with the first surface is smaller than that of fluorine (F) along a direction perpendicular to the first surface.
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公开(公告)号：US20230033999A1
公开(公告)日：2023-02-02
申请号：US17870065
申请日：2022-07-21
Applicant: LG DISPLAY CO., LTD.
Inventor： Seunghyo KO , Nuri ON , TaeWoong MOON
IPC: H01L29/786 , H01L27/32 , H01L29/66
Abstract: A thin film transistor for a display device includes an active layer, and a gate electrode spaced apart from the active layer and at least partially overlapping with the active layer, wherein the active layer includes copper, and has a concentration gradient of copper along a thickness direction of the active layer.
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