公开(公告)号：US20240186473A1

公开(公告)日：2024-06-06

申请号：US18285192

申请日：2022-03-31

Applicant: LG DISPLAY CO., LTD. ,  LG ELECTRONICS INC.

Inventor： Hyeseon EOM ,  Doohyun YOON ,  Moonsun LEE ,  Wonseok CHOI

IPC: H01L33/62 ,  H01L25/16 ,  H01L27/12

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L27/124

Abstract: A display device including a semiconductor light emitting device according to an embodiment includes a substrate, first assembly wiring and second assembly wiring alternately arranged on the substrate and spaced apart from each other, a planarization layer disposed on the first assembly wiring and the second assembly wiring and having a first opening, a semiconductor light emitting device disposed inside the first opening and having a first electrode overlapping the first assembled wiring and the second assembled wiring, and an assembly wiring connection pattern that electrically connects the first assembly wiring and the second assembly wiring. And first electrode can be electrically connected to one of the first assembly wiring and the second assembly wiring.

公开(公告)号：US20250006879A1

公开(公告)日：2025-01-02

申请号：US18688172

申请日：2022-09-01

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Wonseok CHOI ,  Gisang HONG ,  Eunhye LEE ,  Jungmin KIM ,  Hun JANG ,  Hyeseon EOM ,  Moonsun LEE ,  Juhyun NAM

IPC: H01L33/62 ,  H01L25/16

Abstract: The manufacturing method of the display device according to the embodiment includes a step of self-aligning the light emitting device inside the opening of the planarization layer overlapping the first assembly wiring and the second assembly wiring, a step of sequentially forming a conductive layer and an organic layer on a planarization layer and a light emitting device, a step of ashing the organic layer to remove the second part on the first part of the organic layer, and a step of forming a contact electrode by etching the conductive layer corresponding to the second part, wherein the contact electrode is in contact with the side of the first semiconductor layer below the light emitting device.

公开(公告)号：US20240258480A1

公开(公告)日：2024-08-01

申请号：US18290644

申请日：2022-07-22

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Youngdo KIM ,  Hyeseon EOM ,  Juhyun NAM ,  Hun JANG

IPC: H01L33/62 ,  H01L25/16 ,  H01L33/54

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/54

Abstract: A display device according to the embodiment includes a substrate, a first assembly wiring and a second assembly wiring alternately arranged on the substrate and spaced apart from each other, a planarization layer disposed on the first assembly wiring and the second assembly wiring and having an opening and a contact portion, a light emitting device disposed inside the opening and having a first electrode overlapping the first assembly wiring and the second assembly wiring, and a pixel electrode disposed on the planarization layer and in contact with the second electrode of the light emitting device through a contact portion, and the plurality of contact units may overlap a portion of at least one side of the area where the light emitting device is disposed.

公开(公告)号：US20170154941A1

公开(公告)日：2017-06-01

申请号：US15359922

申请日：2016-11-23

Applicant: LG Display Co., Ltd.

Inventor： Kummi OH ,  Hyeseon EOM ,  Shunyoung YANG ,  Jeoungin LEE

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3262 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3246 ,  H01L27/3248 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56

Abstract: Provided are a thin film transistor (TFT) substrate and a method of manufacturing the same. A TFT substrate includes: a substrate defining a pixel area, a first TFT including: an oxide semiconductor layer, a first gate electrode on the oxide semiconductor layer, a first source electrode, and a first drain electrode, a second TFT including: a second gate electrode, a polycrystalline semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a first gate insulating layer under the first gate electrode and the second gate electrode, the first gate insulating layer covering the oxide semiconductor layer, a second gate insulating layer under the polycrystalline semiconductor layer, the second gate insulating layer covering the first gate electrode and the second gate electrode, and an intermediate insulating layer on the first gate electrode and the polycrystalline semiconductor layer, the intermediate insulating layer including a nitride layer.

公开(公告)号：US20250048816A1

公开(公告)日：2025-02-06

申请号：US18717888

申请日：2022-11-28

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Youngdo KIM ,  Hun JANG ,  Juhyun NAM ,  Hyeseon EOM ,  Minseok KIM

IPC: H01L33/62 ,  H01L25/075 ,  H01L25/16

Abstract: A display device according to an embodiment includes a substrate, first assembly wiring and second assembly wiring spaced apart from each other on the substrate, a first insulating layer disposed between the first assembly wiring and the second assembly wiring, a first planarization layer disposed on the second assembly wiring and having an opening overlapping the second assembly wiring, a light emitting device disposed inside the opening and including a first semiconductor layer and a second semiconductor layer on the first semiconductor layer, and contact electrode electrically connecting the second assembly wiring and the first semiconductor layer, and the contact electrode is in contact with the second assembly wiring that overlaps the side surface of the first semiconductor layer and the first planarization layer.

公开(公告)号：US20250023002A1

公开(公告)日：2025-01-16

申请号：US18713565

申请日：2022-10-11

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Youngdo KIM ,  Juhyun NAM ,  Hun JANG ,  Sul LEE ,  Minseok KIM ,  Hyeseon EOM ,  Moonsun LEE

IPC: H01L33/62 ,  H01L33/38

Abstract: A display device including a semiconductor light emitting device according to an embodiment may include a substrate, a first assembly wiring and a second assembly wiring arranged to be spaced apart from each other on the substrate, a planarization layer disposed on the first assembly wiring and the second assembly wiring and having an opening overlapping the first assembly wiring and the second assembly wiring, a light emitting device including a first electrode placed inside the opening and electrically connected to the first assembly wiring, and wherein the opening includes a main opening and one or more auxiliary openings that are connected to the main opening and are smaller than the main opening.

公开(公告)号：US20180247991A1

公开(公告)日：2018-08-30

申请号：US15957139

申请日：2018-04-19

Applicant: LG Display Co., Ltd.

Inventor： Kummi OH ,  Hyeseon EOM ,  Shunyoung YANG ,  Jeoungin LEE

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3262 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/3246 ,  H01L27/3248 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56

Abstract: Provided are a thin film transistor (TFT) substrate and a method of manufacturing the same. A TFT substrate includes: a substrate defining a pixel area, a first TFT including: an oxide semiconductor layer, a first gate electrode on the oxide semiconductor layer, a first source electrode, and a first drain electrode, a second TFT including: a second gate electrode, a polycrystalline semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a first gate insulating layer under the first gate electrode and the second gate electrode, the first gate insulating layer covering the oxide semiconductor layer, a second gate insulating layer under the polycrystalline semiconductor layer, the second gate insulating layer covering the first gate electrode and the second gate electrode, and an intermediate insulating layer on the first gate electrode and the polycrystalline semiconductor layer, the intermediate insulating layer including a nitride layer.