公开(公告)号：US20210181554A1

公开(公告)日：2021-06-17

申请号：US17108598

申请日：2020-12-01

Applicant: LG Display Co., Ltd.

Inventor： Yewon HONG ,  KwangMin JO ,  JungHyun LEE ,  Sohyung LEE ,  Hyun Soo SHIN

IPC: G02F1/1368 ,  G02F1/1362 ,  G02F1/1343 ,  H01L27/32

Abstract: Disclosed is a display apparatus and a method for manufacturing the same, wherein the display apparatus comprises a substrate, a light shielding layer and a signal line on the substrate, a buffer layer on the light shielding layer and the signal line, an active layer on the buffer layer, a gate insulating film on the active layer, a gate electrode on the gate insulating film, a protection layer on the gate electrode, a first electrode of a display device on the protection layer, and a connection electrode configured to connect the signal line and the active layer with each other, wherein the light shielding layer and the signal line are disposed on the same layer, and the connection electrode and the first electrode are formed of the same material.

公开(公告)号：US20240313127A1

公开(公告)日：2024-09-19

申请号：US18672820

申请日：2024-05-23

Applicant: LG Display Co., Ltd.

Inventor： JeongSuk YANG ,  KwangMin JO ,  Sohyung LEE

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  H10K59/124

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L29/6675 ,  H01L29/78609 ,  H01L29/78621 ,  H01L29/7869 ,  H10K59/1213 ,  H10K59/124

Abstract: A display apparatus can include a first thin film transistor including a first active layer including polycrystalline silicon, a first gate electrode overlapping the first active layer with a first gate insulation layer therebetween, and a first source electrode and a first drain electrode connected to the first active layer, a first interlayer insulation layer disposed on the first gate electrode, a second thin film transistor including a second active layer including an oxide semiconductor, a second gate electrode overlapping the second active layer with a second gate insulation layer therebetween, and a second source electrode and a second drain electrode connected to the second active layer, and a second interlayer insulation layer disposed on the first gate electrode, the second gate electrode, and the second gate insulation layer. Also, the second gate insulation layer and the second interlayer insulation layer comprise a dopant for doping the second active layer.

公开(公告)号：US20230071859A1

公开(公告)日：2023-03-09

申请号：US17901192

申请日：2022-09-01

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  KwangMin JO ,  JeongWoo PARK

IPC: H01L29/786 ,  H01L27/32

Abstract: A thin film transistor substrate and a display device comprising the same are provided, in which the thin film transistor substrate comprises a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, a second gate electrode spaced apart from the second active layer, and an auxiliary gate electrode between the second active layer and the second gate electrode, the first active layer and the second active layer are integrally formed and connected to each other, the auxiliary gate electrode is integrally formed with the first gate electrode and spaced apart from the second active layer and the second gate electrode, and the second gate electrode overlaps at least a portion of the auxiliary gate electrode.

公开(公告)号：US20210091233A1

公开(公告)日：2021-03-25

申请号：US17029889

申请日：2020-09-23

Applicant: LG Display Co., Ltd.

Inventor： JeongSuk YANG ,  KwangMin JO ,  Sohyung LEE

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32

Abstract: An embodiment of the present disclosure provides a thin film transistor, a method of manufacturing the thin film transistor and a display apparatus including the thin film transistor. The thin film transistor includes an active layer on a substrate, a gate electrode disposed apart from the active layer to at least partially overlap the active layer, and a gate insulation layer between the active layer and the gate electrode. The gate insulation layer can cover an entire top surface of the active layer facing the gate electrode. The active layer can include a channel part overlapping the gate electrode, a conductivity-providing part which does not overlap the gate electrode, and an offset part between the channel part and the conductivity-providing part. The offset part may not overlap the gate electrode, and the conductivity-providing part can be doped with a dopant.