公开(公告)号：US10903246B2

公开(公告)日：2021-01-26

申请号：US14629538

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Seongpil Cho ,  Jaehoon Park ,  Sohyung Lee ,  Sangsoon Noh ,  Moonho Park ,  Sungjin Lee ,  Seunghyo Ko ,  Mijin Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

公开(公告)号：US11152444B2

公开(公告)日：2021-10-19

申请号：US16528270

申请日：2019-07-31

Applicant: LG Display Co., Ltd.

Inventor： Mijin Jeong ,  JaeHyun Kim ,  DeukHo Yeon

IPC: H01L27/32

Abstract: A display panel and a display device includes a high-permittivity material disposed between electrodes of capacitor disposed in a subpixel. This increases the capacitance per area of the capacitor, such that a high-resolution display device is provided. A high-permittivity material is disposed in the insulating layer, and the surface of the insulating layer is planarized by polishing. The high-permittivity material is prevented from residing in any area, except for the area in which the capacitor is disposed. An unnecessary increase in load in the subpixel is prevented, and the capacitance of the capacitor is increased.

公开(公告)号：US10923038B2

公开(公告)日：2021-02-16

申请号：US16532581

申请日：2019-08-06

Applicant: LG Display Co., Ltd.

Inventor： JaeHyun Kim ,  KyungMo Son ,  Mijin Jeong

IPC: G09G3/3266 ,  H01L27/32

Abstract: A display device comprises a display panel in which a plurality of subpixels are disposed, wherein the plurality of subpixels include a first subpixel, a second subpixel, a third subpixel, and a fourth subpixel that are sequentially disposed in a single row or column; a gate driver disposed on the display panel and supplying a scanning signal to the plurality of subpixels; a first island pattern disposed in each area of the first subpixel and the third subpixel; a second island pattern disposed in each area of the second subpixel and the fourth subpixel; a first connection line electrically connecting the first island pattern disposed in the area of the first subpixel and the first island pattern disposed in the area of the third subpixel; and a second connection line electrically connecting second island pattern disposed in the area of the second subpixel and the second island pattern disposed in the area of the fourth subpixel, wherein the first connection line and the second connection line are electrically disconnected from each other, and the gate driver independently drives the first connection line and the second connection line.

公开(公告)号：US10186528B2

公开(公告)日：2019-01-22

申请号：US14628357

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Seongpil Cho ,  Jaehoon Park ,  Sohyung Lee ,  Sangsoon Noh ,  Moonho Park ,  Sungjin Lee ,  Seunghyo Ko ,  Mijin Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

公开(公告)号：US20240107805A1

公开(公告)日：2024-03-28

申请号：US18213047

申请日：2023-06-22

Applicant: LG Display Co., Ltd.

Inventor： Mijin Jeong ,  Sangsoon Noh ,  Dongchae Shin ,  Sunyoung Choi ,  Moonho Park

IPC: H10K59/121 ,  H01L27/12

CPC classification number: H10K59/1213 ,  H01L27/1222

Abstract: The present disclosure relates to an organic light emitting display device, and more particularly, to a thin film transistor using an oxide semiconductor material for a plurality of thin film transistors constituting a circuit portion of a sub-pixel and a display panel including the thin film transistor. The plurality of thin film transistors includes a plurality of switching transistors and a driving transistor. Each of the plurality of switching transistors has a first dose, and the driving transistor has a second dose different from the first dose.

公开(公告)号：US20230389380A1

公开(公告)日：2023-11-30

申请号：US18199001

申请日：2023-05-18

Applicant: LG Display Co., Ltd.

Inventor： Dongchae Shin ,  Sangsoon Noh ,  Mijin Jeong

IPC: H10K59/131 ,  H10K59/88 ,  H10K59/121

CPC classification number: H10K59/131 ,  H10K59/88 ,  H10K59/1213

Abstract: Provided is an organic light emitting display device in which a driving thin film transistor (TFT) includes an oxide semiconductor pattern. The driving thin film transistor includes a gate electrode disposed under an oxide semiconductor pattern, and a dummy electrode, a source electrode and a drain electrode over the oxide semiconductor pattern, and the dummy electrode is electrically connected to the source electrode to increase the S-factor of the driving TFT. In addition, the organic light emitting display device of the present disclosure includes a plurality of switching TFTs including an oxide semiconductor pattern, and the plurality of switching TFTs includes a plurality of switching thin film transistors having different distances between the oxide semiconductor pattern and the gate electrode so as to have different threshold voltages.