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1.发明授权公开(公告)号：US08803153B2
公开(公告)日：2014-08-12
申请号：US14160380
申请日：2014-01-21
Applicant: LG Display Co., Ltd.
Inventor： KyoungJin Nam , SeungRyull Park , KyungMo Son , JiHye Lee
IPC: H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC classification number: G02F1/134363 , G02F1/136227 , G02F2001/133357 , G02F2001/134372 , G02F2201/50 , G02F2202/022 , H01L27/124 , H01L27/1248 , H01L27/1259
Abstract: A fringe field switching (FFS) liquid crystal display (LCD) device which uses an organic insulating layer and consumes less power, in which film quality of an upper layer of a low temperature protective film is changed to improve undercut within a pad portion contact hole, and a method for fabricating the same is provided.
Abstract translation: 使用有机绝缘层并消耗较少功率的边缘场切换（FFS）液晶显示（LCD）装置，其中改变低温保护膜的上层的膜质量以改善焊盘部分接触孔内的底切 ，并提供其制造方法。
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公开(公告)号：US11646319B2
公开(公告)日：2023-05-09
申请号：US17109941
申请日：2020-12-02
Applicant: LG Display Co., Ltd.
Inventor： Sunghoon Kim , Dongchae Shin , KyungMo Son
CPC classification number: H01L27/1218 , G09G2300/0408 , G09G2300/0804 , H01L25/167 , H01L27/156 , H01L27/3244 , H01L51/0097
Abstract: Embodiments of the disclosure are related to polyimide substrates and display devices, a plurality of intaglio patterns are formed on at least a portion of one surface of a polyimide substrate, a high transmissive filling is disposed inside the intaglio pattern, thus an overall transmittance of the polyimide substrate is enhanced. Furthermore, the filling having a certain range of a coefficient of thermal expansion is disposed in the intaglio pattern to maintain a heat resistance of the polyimide substrate, an element being required a high temperature process could be disposed on the polyimide substrate having an enhanced transmittance.
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3.发明授权公开(公告)号：US12074260B2
公开(公告)日：2024-08-27
申请号：US18144594
申请日：2023-05-08
Applicant: LG DISPLAY CO., LTD.
Inventor： KyungMo Son , ShunYoung Yang
CPC classification number: H01L33/486 , H01L27/156 , H01L29/7869 , H01L33/12 , H01L33/38 , H01L33/40 , H01L33/62
Abstract: A display device can include multiple layers, and a capacitor on the multiple layers. The capacitor can include one capacitor electrode and the other capacitor electrode, in which the one capacitor electrode is on a layer where a first gate electrode of a first thin film transistor is disposed on, and an electrode disposed on a layer where the other capacitor electrode is disposed on and made of same material with the other capacitor electrode overlaps a second thin film transistor. The display device can further include a first planarization layer and a second planarization layer on the first thin film transistor and the second thin film transistor, and a source electrode of the first thin film transistor between the first and second planarization layers.
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公开(公告)号：US12219811B2
公开(公告)日：2025-02-04
申请号：US17554888
申请日：2021-12-17
Applicant: LG Display Co., Ltd.
Inventor： KyungMo Son
IPC: H10K59/121 , H10K59/131
Abstract: A display device includes a substrate comprising a penetration area, a separation area, at least one non-display area, and a display area; a light emitting element disposed in the display area on the substrate; at least one thin film transistor provided in the display area; a separation structure located in the separation area and disconnecting an organic light emitting layer of the light emitting element; and an unevenness pattern disposed below the separation structure and overlapping with the separation structure, wherein the unevenness pattern has a width less than a width of the separation structure.
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Patent Agency Ranking
公开(公告)号：US20220209181A1
公开(公告)日：2022-06-30
申请号：US17497490
申请日：2021-10-08
Applicant: LG Display Co., Ltd.
Inventor： KyungMo Son
Abstract: A display device comprises a substrate having an active region and an outer region surrounding the active region, a substrate hole provided in the active region of the substrate, a separation area positioned between the active region and the substrate hole, a first thin film transistor provided in the active region, a first interlayer insulating layer covering a first gate electrode of the first thin film transistor, a first intermediate insulating layer on the first interlayer insulating layer, a second thin film transistor positioned on the first intermediate insulating layer, a second interlayer insulating layer covering a second gate electrode of the second thin film transistor and extending to the separation area, and a second intermediate insulating layer covering an upper portion of the second interlayer insulating layer and extending to the separation area. The second intermediate insulating layer has different thicknesses in the active region and the separation area.
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公开(公告)号：US08669130B2
公开(公告)日：2014-03-11
申请号：US13668071
申请日：2012-11-02
Applicant: LG Display Co., Ltd.
Inventor： KyoungJin Nam , SeungRyull Park , KyungMo Son , JiHye Lee
IPC: H01L21/00
CPC classification number: G02F1/134363 , G02F1/136227 , G02F2001/133357 , G02F2001/134372 , G02F2201/50 , G02F2202/022 , H01L27/124 , H01L27/1248 , H01L27/1259
Abstract: A fringe field switching (FFS) liquid crystal display (LCD) device which uses an organic insulating layer and consumes less power, in which film quality of an upper layer of a low temperature protective film is changed to improve undercut within a pad portion contact hole, and a method for fabricating the same is provided.
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公开(公告)号：US11682750B2
公开(公告)日：2023-06-20
申请号：US17115251
申请日：2020-12-08
Applicant: LG DISPLAY CO., LTD.
Inventor： KyungMo Son , ShunYoung Yang
CPC classification number: H01L33/486 , H01L27/156 , H01L29/7869 , H01L33/12 , H01L33/38 , H01L33/40 , H01L33/62
Abstract: Embodiments of the present invention relate to a display device in which, in a structure in which an oxide semiconductor thin film transistor is disposed on an upper layer of a low temperature polycrystalline silicon thin film transistor, the hydrogen adsorption layer is disposed on the capacitor electrode located on the driving transistor among low temperature polycrystalline silicon thin film transistors, so that it is possible to prevent the reduction of an S factor due to the re-hydrogenation of the driving transistor in the heat treatment process of the oxide semiconductor thin film transistor.
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公开(公告)号：US20220208915A1
公开(公告)日：2022-06-30
申请号：US17554888
申请日：2021-12-17
Applicant: LG Display Co., Ltd.
Inventor： KyungMo Son
IPC: H01L27/32
Abstract: A display device includes a substrate comprising a penetration area, a separation area, at least one non-display area, and a display area; a light emitting element disposed in the display area on the substrate; at least one thin film transistor provided in the display area; a separation structure located in the separation area and disconnecting an organic light emitting layer of the light emitting element; and an unevenness pattern disposed below the separation structure and overlapping with the separation structure, wherein the unevenness pattern has a width less than a width of the separation structure.
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公开(公告)号：US10923038B2
公开(公告)日：2021-02-16
申请号：US16532581
申请日：2019-08-06
Applicant: LG Display Co., Ltd.
Inventor： JaeHyun Kim , KyungMo Son , Mijin Jeong
IPC: G09G3/3266 , H01L27/32
Abstract: A display device comprises a display panel in which a plurality of subpixels are disposed, wherein the plurality of subpixels include a first subpixel, a second subpixel, a third subpixel, and a fourth subpixel that are sequentially disposed in a single row or column; a gate driver disposed on the display panel and supplying a scanning signal to the plurality of subpixels; a first island pattern disposed in each area of the first subpixel and the third subpixel; a second island pattern disposed in each area of the second subpixel and the fourth subpixel; a first connection line electrically connecting the first island pattern disposed in the area of the first subpixel and the first island pattern disposed in the area of the third subpixel; and a second connection line electrically connecting second island pattern disposed in the area of the second subpixel and the second island pattern disposed in the area of the fourth subpixel, wherein the first connection line and the second connection line are electrically disconnected from each other, and the gate driver independently drives the first connection line and the second connection line.
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