公开(公告)号：US20200211430A1

公开(公告)日：2020-07-02

申请号：US16514645

申请日：2019-07-17

Applicant: LG Display Co., Ltd.

Inventor： Min-Cheol KIM ,  Jae-Hong KIM ,  Hee-Eun LEE

IPC: G09G3/00 ,  G09G3/3233 ,  G09G3/3275 ,  G09G3/3266

Abstract: Disclosed herein is an organic light emitting diode (OLED) display device capable of improving image sticking improvement capability by expanding an image shift orbit or changing the shape of an image shift orbit using a maximum shift range. An image processor of an OLED display device independently determines a pixel shift amount in a horizontal direction and a pixel shift amount in a vertical direction in consideration of a maximum shift range in each of the horizontal and vertical directions, simultaneously applies the determined pixel shift amounts in the horizontal and vertical directions to shift a source image, and outputs the shifted image.

公开(公告)号：US20170309749A1

公开(公告)日：2017-10-26

申请号：US15643030

申请日：2017-07-06

Applicant: LG Display Co., Ltd.

Inventor： Min-Cheol KIM ,  Youn-Gyoung CHANG ,  Kwon-Shik PARK ,  So-Hyung LEE ,  Ho-Young JUNG ,  Ha-Jin YOO ,  Jeong-Suk YANG

IPC: H01L29/786 ,  H01L21/477 ,  H01L21/02 ,  H01L29/10

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/477 ,  H01L29/1033 ,  H01L29/66969

Abstract: A method for manufacturing a semiconductor device is discussed. The method includes forming a gate electrode on a substrate, forming a gate insulating film over the substrate, depositing an In—Ga—Zn oxide over the gate insulating film while heating the substrate to a temperature of 200 to 300° C., an atomic percent ratio of Zn in the In—Ga—Zn oxide as-deposited being higher than that of In or Ga, heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an active layer crystallized throughout an entire thickness of the active layer, and forming a source electrode and a drain electrode.

公开(公告)号：US20180219099A1

公开(公告)日：2018-08-02

申请号：US15934360

申请日：2018-03-23

Applicant: LG DISPLAY CO., LTD.

Inventor： Min-Cheol KIM ,  Youn-Gyoung CHANG ,  Kwon-Shik PARK ,  So-Hyung LEE ,  Ho-Young JUNG ,  Ha-Jin YOO ,  Jeong-Suk YANG

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/10 ,  H01L21/477

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/477 ,  H01L29/1033 ,  H01L29/66969

Abstract: A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising an oxide including indium, zinc and gallium on the gate insulating film, and overlapping the gate electrode, and a source electrode and a drain electrode that are spaced apart from each other, wherein the active layer is formed from a zinc-rich target material, and an atomic % ratio of indium, zinc and gallium in the active layer is different from an atomic % ratio of the zinc-rich target material.

公开(公告)号：US20160163866A1

公开(公告)日：2016-06-09

申请号：US14937598

申请日：2015-11-10

Applicant: LG Display Co., Ltd.

Inventor： Min-Cheol KIM ,  Youn-Gyoung CHANG ,  Kwon-Shik PARK ,  So-Hyung LEE ,  Ho-Young JUNG ,  Ha-Jin YOO ,  Jeong-Suk YANG

IPC: H01L29/786 ,  H01L21/477 ,  H01L29/10 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/477 ,  H01L29/1033 ,  H01L29/66969

Abstract: An oxide semiconductor crystallization method may include depositing an In—Ga—Zn oxide over the substrate while heating a substrate to a temperature of 200 to 300° C., and heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an oxide semiconductor layer crystallized throughout an entire thickness thereof.

Abstract translation: 氧化物半导体结晶方法可以包括在衬底上沉积In-Ga-Zn氧化物，同时将衬底加热至200至300℃的温度，并在200℃的温度下对沉积的In-Ga-Zn氧化物进行热处理 至350℃，从而形成在其整个厚度上结晶的氧化物半导体层。