公开(公告)号：US20250040194A1

公开(公告)日：2025-01-30

申请号：US18917872

申请日：2024-10-16

Applicant: LG Display Co., Ltd.

Inventor： ChanYong Jeong ,  JuHeyuck Baeck ,  Dohyung Lee ,  Younghyun Ko

IPC: H01L29/786

Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

公开(公告)号：US11514858B2

公开(公告)日：2022-11-29

申请号：US17404721

申请日：2021-08-17

Applicant: LG DISPLAY CO., LTD.

Inventor： Min-Gu Kang ,  SeungChan Choi ,  Younghyun Ko

IPC: G09G3/3258 ,  G09G3/3291

Abstract: A display device and a driving method for a display device are provided. The display device uses a second storage capacitor and stably moves the threshold voltage of the driving transistor to a positive value in a diode-connected driving circuit. Accordingly, a compensation performance of a threshold voltage of a driving transistor may be improved.

公开(公告)号：US20230337482A1

公开(公告)日：2023-10-19

申请号：US18157571

申请日：2023-01-20

Applicant: LG Display Co., Ltd.

Inventor： Min-Gu Kang ,  SeungChan Choi ,  Younghyun Ko ,  Uyhyun Choi ,  Jaeman Jang

IPC: H10K59/126 ,  H10K59/121 ,  H01L29/786 ,  H01L29/417

CPC classification number: H10K59/126 ,  H10K59/1213 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/78672 ,  H01L29/78633 ,  H01L29/41733

Abstract: An organic light emitting display device is disclosed that uses a hybrid type thin film transistor. The organic light emitting display device includes a conductive pattern with a higher etch resistance compared to an inorganic thin film in an upper edge of a semiconductor pattern, and is thereby capable of simplifying a manufacturing process of a substrate on which an array of hybrid type thin film transistors each including multiple layers is disposed, and improving the performance of thin film transistors formed on the array substrate. The organic light emitting display device can represent a variety of grayscale images at low grayscales as a driving thin film transistor including an oxide semiconductor pattern is designed to have an increased s-factor value.

公开(公告)号：US20210399142A1

公开(公告)日：2021-12-23

申请号：US17340937

申请日：2021-06-07

Applicant: LG Display Co., Ltd.

Inventor： ChanYong Jeong ,  JuHeyuck Baeck ,  Dohyung Lee ,  Younghyun Ko

IPC: H01L29/786

Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

公开(公告)号：US10811484B2

公开(公告)日：2020-10-20

申请号：US16216560

申请日：2018-12-11

Applicant: LG Display Co., Ltd.

Inventor： DaeHwan Kim ,  Younghyun Ko

IPC: H01L27/32 ,  G09G3/3291 ,  G09G3/3233

Abstract: An organic light emitting display panel and an organic light emitting display apparatus using the same are disclosed, in which a switching transistor and a driving transistor are provided on their respective layers different from each other. To this end, the organic light emitting display panel comprises a substrate partitioned by a plurality of pixels, a driving transistor provided in a first pixel of the pixels and provided on the substrate in a top gate type, a first insulating film for covering the driving transistor, a switching transistor provided on the first insulating film in a top gate type, a second insulating film for covering the first insulating film and the switching transistor, a planarization film provided on the second insulating film, and an organic light emitting diode provided on the planarization film and connected with a driving first conductor of the driving transistor.

公开(公告)号：US20240215341A1

公开(公告)日：2024-06-27

申请号：US18481745

申请日：2023-10-05

Applicant: LG DISPLAY CO., LTD.

Inventor： Younghyun Ko ,  ChanYong Jeong

IPC: H10K59/124 ,  H10K59/12

CPC classification number: H10K59/124 ,  H10K59/1201

Abstract: Discussed are a display panel, a display device, and a method for manufacturing the display device, capable of preventing damage to an active layer and deterioration of an element. The display device can include an active layer having a channel area disposed between a first area and a second area, a first barrier layer disposed on a portion of an upper surface of the active layer, a first auxiliary electrode disposed on the first area on the first barrier, a second auxiliary electrode disposed on the second area on the first barrier layer, a first diffusion control layer disposed on the first and second auxiliary electrodes, an insulation layer disposed on the first diffusion control layer, and a first electrode electrically connected to the first auxiliary electrode and a second electrode electrically connected to the second auxiliary electrode, disposed on the insulation layer.

公开(公告)号：US11636805B2

公开(公告)日：2023-04-25

申请号：US17469682

申请日：2021-09-08

Applicant: LG Display Co., Ltd.

Inventor： YongHo Jang ,  Younghyun Ko

IPC: G09G3/32 ,  G09G3/3233 ,  G09G3/20 ,  H01L27/32 ,  H01L29/786 ,  H01L27/12

Abstract: The present specification provides a display device and a driving method thereof performing sampling for sensing a sampling voltage of a driving transistor using a fast mode in which a driving transistor operates by a sampling voltage formed in one storage capacitor, and data writing using the slow mode in which the driving transistor is operated by a data voltage formed in another storage capacitor.

公开(公告)号：US11515425B2

公开(公告)日：2022-11-29

申请号：US17115582

申请日：2020-12-08

Applicant: LG Display Co., Ltd.

Inventor： Younghyun Ko

IPC: H01L29/786

Abstract: Provided are a thin film transistor array substrate and an electronic device including the same. The thin film transistor array substrate includes a first active layer disposed on a substrate, a first gate insulating film disposed on the first active layer, a first gate electrode disposed on the first gate insulating film to overlap a part of the first active layer, a first insulating film disposed on the first gate electrode, a second active layer disposed on the first insulating film to overlap the first active layer and the first gate electrode, a second gate insulating film disposed on the second active layer, and a second gate electrode disposed on the second gate insulating film to overlap a part of the second active layer. The first gate electrode and the second gate electrode overlap each other, and thus it is possible to reduce an area occupied by transistors.

公开(公告)号：US12148841B2

公开(公告)日：2024-11-19

申请号：US17340937

申请日：2021-06-07

Applicant: LG Display Co., Ltd.

Inventor： Chanyong Jeong ,  Juheyuck Baeck ,  Dohyung Lee ,  Younghyun Ko

IPC: H01L29/786

Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

公开(公告)号：US11888065B2

公开(公告)日：2024-01-30

申请号：US17975366

申请日：2022-10-27

Applicant: LG Display Co., Ltd.

Inventor： Younghyun Ko

IPC: H01L29/786

CPC classification number: H01L29/78603 ,  H01L29/78696

Abstract: Provided are a thin film transistor army substrate and an electronic device including the same. The thin film transistor army substrate includes a first active layer disposed on a substrate, a first gate insulating film disposed on the first active layer, a first gate electrode disposed on the first gate insulating film to overlap a part of the first active layer, a first insulating film disposed on the first gate electrode, a second active layer disposed on the first insulating film to overlap the first active layer and the first gate electrode, a second gate insulating film disposed on the second active layer, and a second gate electrode disposed on the second gate insulating film to overlap a part of the second active layer. The first gate electrode and the second gate electrode overlap each other, and thus it is possible to reduce an area occupied by transistors.