公开(公告)号：US11888069B2

公开(公告)日：2024-01-30

申请号：US17398767

申请日：2021-08-10

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  Juheyuck Baeck ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L27/12 ,  G09G3/3233

CPC classification number: H01L29/78645 ,  G09G3/3233 ,  H01L27/1225 ,  H01L29/7869 ,  G09G2300/0842

Abstract: One embodiment of the present disclosure provides a thin film transistor comprising an auxiliary electrode, a gate electrode and an active layer disposed between the auxiliary electrode and the gate electrode, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion disposed at one side of the channel portion, and a second connection portion disposed at the other side of the channel portion, and the channel portion includes a first portion overlapped with the auxiliary electrode and a second portion not overlapped with the auxiliary electrode. One embodiment of the present disclosure also provides a display apparatus comprising the thin film transistor.

公开(公告)号：US12148841B2

公开(公告)日：2024-11-19

申请号：US17340937

申请日：2021-06-07

Applicant: LG Display Co., Ltd.

Inventor： Chanyong Jeong ,  Juheyuck Baeck ,  Dohyung Lee ,  Younghyun Ko

IPC: H01L29/786

Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

公开(公告)号：US11107870B2

公开(公告)日：2021-08-31

申请号：US16221203

申请日：2018-12-14

Applicant: LG DISPLAY CO., LTD.

Inventor： Saeroonter Oh ,  Jungsun Beak ,  Seungmin Lee ,  Juheyuck Baeck ,  Hyunsoo Shin ,  Jeyong Jeon ,  Dohyung Lee

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3208 ,  H01L51/52

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.

公开(公告)号：US10692975B2

公开(公告)日：2020-06-23

申请号：US16210934

申请日：2018-12-05

Applicant: LG DISPLAY CO., LTD.

Inventor： Juheyuck Baeck ,  Jonguk Bae ,  Saeroonter Oh ,  Dohyung Lee ,  Taeuk Park

IPC: H01L29/10 ,  H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66

Abstract: A thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

公开(公告)号：US10192957B2

公开(公告)日：2019-01-29

申请号：US15531952

申请日：2015-12-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Juheyuck Baeck ,  Jonguk Bae ,  Saeroonter Oh ,  Dohyung Lee ,  Taeuk Park

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H01L29/49

Abstract: a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

公开(公告)号：US10181502B2

公开(公告)日：2019-01-15

申请号：US14838659

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter Oh ,  Jungsun Beak ,  Seungmin Lee ,  Juheyuck Baeck ,  Hyunsoo Shin ,  Jeyong Jeon ,  Dohyung Lee

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3208 ,  H01L51/52

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.

公开(公告)号：US09735286B2

公开(公告)日：2017-08-15

申请号：US15156263

申请日：2016-05-16

Applicant: LG Display Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Jangyeon Kwon ,  Jonguk Bae ,  Juheyuck Baeck ,  Kyung Park

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L21/02565 ,  H01L21/02584 ,  H01L21/02592 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: The present disclosure relates to a thin film transistor substrate having a high reliability oxide semiconductor material including a metal oxide semiconductor material. A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a semiconductor layer including an oxide semiconductor material combining one or more of indium, gallium and zinc, oxygen, and a doping material. The doping material may be a group 15 or 16 gaseous element. The semiconductor layer has a channel area overlapping with the gate electrode with a gate insulating layer, a source area extended from one side of the channel area, and a drain area extended from another side of the channel area, a source electrode connected to the source area, and a drain electrode connected to the drain area.

公开(公告)号：US09691833B2

公开(公告)日：2017-06-27

申请号：US14838631

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter Oh ,  Seungmin Lee ,  Juheyuck Baeck ,  Hoiyong Kwon ,  Jeyong Jeon ,  Dohyung Lee

IPC: H01L29/10 ,  H01L27/32 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/3262 ,  G09G2300/0426 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/78675 ,  H01L29/7869

Abstract: The present invention relates to a thin film transistor substrate having two different types of semiconductor materials on the same substrate, and a display using the same. A disclosed display may include a substrate, a first thin film transistor having a polycrystalline semiconductor material on the substrate and a second thin film transistor having an oxide semiconductor material on the substrate.