公开(公告)号：US10141467B2

公开(公告)日：2018-11-27

申请号：US14289150

申请日：2014-05-28

Applicant: LG ELECTRONICS INC.

Inventor： Sunghyun Hwang ,  Daeyong Lee ,  Jinsung Kim

IPC: H01L31/00 ,  H01L31/068 ,  H01L31/0224 ,  H01L31/18

Abstract: Discussed is a solar cell including a semiconductor substrate, a first conductive type region formed on a surface of the semiconductor substrate, a second conductive type region formed on the other surface of the semiconductor substrate, the second conductive type region being spaced from an edge of the semiconductor substrate and having a conductive type different from that of the first conductive type region, an isolation portion formed at a perimeter of the second conductive type region on the other surface of the semiconductor substrate, a first electrode connected to the first conductive type region, and a second electrode connected to the second conductive type region, wherein the second conductive type region has a boundary portion in a part adjacent to the isolation portion, and in which a doping concentration or a junction depth varies over a width of the boundary portion.

公开(公告)号：US20180158968A1

公开(公告)日：2018-06-07

申请号：US15830693

申请日：2017-12-04

Applicant: LG ELECTRONICS INC.

Inventor： Daeyong Lee ,  Junyong Ahn

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/02363 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method of manufacturing the same are discussed. The method of manufacturing the solar cell includes forming a dopant layer on one surface of a semiconductor substrate, selectively etching at least a portion of the dopant layer positioned in a first area of the semiconductor substrate, performing a thermal processing operation on the semiconductor substrate to form a conductive region, removing the dopant layer remaining in the one surface of the semiconductor substrate, forming first electrodes on a second area of the semiconductor substrate, and forming second electrodes on a surface opposite the one surface of the semiconductor substrate. In the thermal processing operation, a lightly doped region is formed in the first area, and a heavily doped region is formed in the second area.

公开(公告)号：US09640707B2

公开(公告)日：2017-05-02

申请号：US14289172

申请日：2014-05-28

Applicant: LG ELECTRONICS INC.

Inventor： Jinsung Kim ,  Daeyong Lee

IPC: H01L31/18 ,  H01L21/265 ,  H01L21/223 ,  H01L21/266 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a solar cell is disclosed. The method includes forming a doping region including first and second portions having different doping concentrations by ion-implanting a dopant into a semiconductor substrate and forming an electrode connected to the doping region. In the forming of the doping region, the first and second portions are simultaneously formed by the same process using a mask that is disposed at a distance from the semiconductor substrate.