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    FILM PREPARATION METHOD, SOLAR CELL, PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC SYSTEM
    1.
    发明公开
    FILM PREPARATION METHOD, SOLAR CELL, PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC SYSTEM 审中-公开

    公开(公告)号：US20240347667A1

    公开(公告)日：2024-10-17

    申请号：US18369946

    申请日：2023-09-19

    Applicant: TRINA SOLAR CO., LTD.

    Inventor： Chengfa LIU ,  Shuai ZHANG ,  Hong CHEN ,  Yugang LU ,  Wanli LI ,  Yang ZOU

    IPC: H01L31/18 ,  H01L31/0216

    CPC classification number: H01L31/18 ,  H01L31/02167

    Abstract: The present application provides a film preparation method, a solar cell, a photovoltaic device, and a photovoltaic system. The film preparation method includes forming a first passivation layer on a first surface of a substrate by using a first preparation technique; and forming a second passivation layer on a surface of the first passivation layer away from the substrate by using a second preparation technique, a material of the second passivation layer is the same as that of the first passivation layer; wherein a passivation layer forming speed of the first preparation technique is lower than that of the second preparation technique, and a passivation effect of the first passivation layer is better than that of the second passivation layer.

    ALL-BLACK CRYSTALLINE SILICON SOLAR CELL AND PREPARATION METHOD THEREFOR, AND PHOTOVOLTAIC MODULE
    3.
    发明公开
    ALL-BLACK CRYSTALLINE SILICON SOLAR CELL AND PREPARATION METHOD THEREFOR, AND PHOTOVOLTAIC MODULE 审中-公开

    公开(公告)号：US20240304736A1

    公开(公告)日：2024-09-12

    申请号：US18575629

    申请日：2023-02-22

    Applicant: HENGDIAN GROUP DMEGC MAGNETICS CO., LTD

    Inventor： Yong REN ,  Yue HE ,  Hailiang REN ,  Shuai GUO ,  Zhaochun SHI ,  Lei ZHANG

    IPC: H01L31/0216 ,  H01L31/18

    CPC classification number: H01L31/02168 ,  H01L31/02167 ,  H01L31/1868

    Abstract: Disclosed in the present invention are an all-black crystalline silicon solar cell and a preparation method therefor, and a photovoltaic module. The preparation method comprises the following steps: (1) depositing a film layer on the front face of a silicon wafer by means of a PECVD method so as to obtain a silicon wafer having a coated front face, wherein the film layer is of a laminated structure and comprises an innermost SiNx layer having a thickness of 20 nm or more; (2) subjecting the resulting silicon wafer having the coated front face to back-face PECVD and laser beam grooving so as to obtain a coarse silicon solar cell; and (3) subjecting the resulting coarse silicon solar cell to silk-screen printing and electron injection to then obtain an all-black crystalline silicon solar cell. In the preparation method provided in the present application, the film layer is deposited on the front face of the silicon wafer by means of the PECVD method, the material and thickness of the innermost SiNx layer are designed, and particularly when the thickness thereof is 20 nm or more, the absorption and reflection effects of incident light on the surface of the cell are influenced, such that the incident light is almost completely absorbed, and only an extremely small amount of the incident light is reflected; therefore, the all-black crystalline silicon solar cell is obtained.

    Photovoltaic cell, method for manufacturing same, and photovoltaic module
    8.
    发明授权
    Photovoltaic cell, method for manufacturing same, and photovoltaic module 有权

    公开(公告)号：US11955571B2

    公开(公告)日：2024-04-09

    申请号：US18336711

    申请日：2023-06-16

    Applicant: ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

    Inventor： Ruifeng Li ,  Wenqi Li ,  Yankai Qiu ,  Ning Zhang ,  Bin Li

    IPC: H01L31/0216 ,  H01L31/18

    CPC classification number: H01L31/02168 ,  H01L31/02167 ,  H01L31/1868

    Abstract: The photovoltaic cell includes a silicon substrate, a first passivation layer, a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer. The second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer, a ratio of the number of oxide atoms to the number of aluminum atoms in the at least one aluminum oxide layer is greater than 0.8 and less than 1.6. The number of silicon atoms is greater than the number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than the number of nitrogen atoms in the at least one silicon oxynitride layer. A ratio of the number of silicon atoms to the number of nitrogen atoms in the at least one silicon nitride layer is greater than 1 and less than 4.

    ELECTRODE ASSEMBLY
    10.
    发明公开
    ELECTRODE ASSEMBLY 审中-公开

    公开(公告)号：US20240097054A1

    公开(公告)日：2024-03-21

    申请号：US18260002

    申请日：2021-12-20

    Applicant: REC SOLAR PTE. LTD.

    Inventor： Meng Hsiu WU

    IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/054

    CPC classification number: H01L31/02167 ,  H01L31/022425 ,  H01L31/048 ,  H01L31/0547 ,  H01L31/0747

    Abstract: An electrode assembly (100) for a solar cell. The electrode assembly comprises an insulating optically transparent film (101) comprising a plurality of perforations (103) formed therein, and a plurality of longitudinally extending, laterally spaced conductive wire portions (102) arranged side by side on a surface of the film. One or more of the perforations are formed so as to have at least a portion thereof interposed laterally between two wire portions of the plurality of wire portions. The perforations formed in the film may reduce losses that would otherwise occur due to absorption of light by the film. Also disclosed is a solar cell (107) that includes the electrode assembly described above, a method of forming the electrode assembly, a method of forming the solar cell, and a method of forming a solar module.

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