公开(公告)号：US20030092224A1

公开(公告)日：2003-05-15

申请号：US10291376

申请日：2002-11-12

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Eui-Hoon Hwang ,  Ki-Jong Kim

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621

Abstract: A semiconductor doping method includes steps of forming an insulation layer on a substrate, forming a semiconductor layer on the insulation layer, forming a photoresist layer on the insulation layer, patterning the photoresist layer to provide a portion of the photoresist layer on a first portion of the semiconductor layer, hard baking the portion of the photoresist layer at a first hard-baking temperature of more than about 140nullC., doping the semiconductor layer with an impurity in regions other than the first portion of the semiconductor layer, and removing the portion of the photoresist layer.

Abstract translation: 半导体掺杂方法包括以下步骤：在衬底上形成绝缘层，在绝缘层上形成半导体层，在绝缘层上形成光致抗蚀剂层，图案化光致抗蚀剂层，以在第一部分上形成光致抗蚀剂层的一部分 半导体层，在大于约140℃的第一硬烘烤温度下硬化烘烤光致抗蚀剂层的部分，在除了半导体层的第一部分以外的区域中掺杂半导体层，并除去 部分光致抗蚀剂层。