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公开(公告)号:US20240036753A1
公开(公告)日:2024-02-01
申请号:US17877240
申请日:2022-07-29
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Wai Leong Chin , Francis Chee Khai Chew , Trismardawi Tanadi , Chun Sum Yeung , Lawrence Dumalag , Ekamdeep Singh
IPC: G06F3/06
CPC classification number: G06F3/064 , G06F3/0653 , G06F3/0604 , G06F3/0679
Abstract: A processing device in a memory sub-system determines whether a media endurance metric associated with a memory block of a memory device satisfies one or more conditions. In response to the one or more conditions being satisfied, a temperature of the memory block is compared to a threshold temperature range. In response to determining the temperature of the memory block is within the threshold temperature range, the processing device causes execution of a wordline leakage test of a wordline group of a set of wordline groups of the memory block. A result of the wordline leakage test of the target wordline group is determined and an action is executed based on the result of the wordline leakage test.
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公开(公告)号:US20240338139A1
公开(公告)日:2024-10-10
申请号:US18748715
申请日:2024-06-20
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Wai Leong Chin , Francis Chee Khai Chew , Trismardawi Tanadi , Chun Sum Yeung , Lawrence Dumalag , Ekamdeep Singh
CPC classification number: G06F3/064 , G06F3/0604 , G06F3/0653 , G06F3/0679 , G06F12/0646 , G06F2212/7202 , G06F2212/7204 , G06F2212/7206
Abstract: A memory sub-system causing execution of a first wordline leakage test of a first wordline group of a set of wordline groups of a memory block in response to determining a temperature of the memory block is within a threshold temperature range. A first result of the first wordline leakage test is determined. A second wordline leakage test of a second wordline group is caused to be executed and a second result is determined. A determination is made that the first result of the first wordline leakage test of the first wordline group satisfies a first condition. A determination is made that the second result of the second wordline leakage test of the second wordline group satisfies a second condition. In response to satisfaction of the conditions, an action is executed.
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公开(公告)号:US12045482B2
公开(公告)日:2024-07-23
申请号:US17877240
申请日:2022-07-29
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Wai Leong Chin , Francis Chee Khai Chew , Trismardawi Tanadi , Chun Sum Yeung , Lawrence Dumalag , Ekamdeep Singh
CPC classification number: G06F3/064 , G06F3/0604 , G06F3/0653 , G06F3/0679 , G06F12/0646 , G06F2212/7202 , G06F2212/7204 , G06F2212/7206
Abstract: A processing device in a memory sub-system determines whether a media endurance metric associated with a memory block of a memory device satisfies one or more conditions. In response to the one or more conditions being satisfied, a temperature of the memory block is compared to a threshold temperature range. In response to determining the temperature of the memory block is within the threshold temperature range, the processing device causes execution of a wordline leakage test of a wordline group of a set of wordline groups of the memory block. A result of the wordline leakage test of the target wordline group is determined and an action is executed based on the result of the wordline leakage test.
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