公开(公告)号：US08778762B2

公开(公告)日：2014-07-15

申请号：US13708789

申请日：2012-12-07

Applicant: Micron Technology, Inc.

Inventor： Saurabh Keshav ,  Scott Pook ,  Fatma Arzum Simsek-Ege

IPC: H01L21/336

CPC classification number: H01L29/66833 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/7889 ,  H01L29/7926

Abstract: Some embodiments include methods of forming vertically-stacked structures, such as vertically-stacked memory cells. A first hardmask is formed over a stack of alternating electrically conductive levels and electrically insulative levels. A first opening is formed through the first hardmask and the stack. Cavities are formed to extend into the electrically conductive levels. A fill material is formed within the first opening and within the cavities. A second hardmask is formed over the first hardmask and over the fill material. A second opening is formed through the second hardmask. The second opening is narrower than the first opening. The second opening is extended into the fill material to form an upwardly-opening container from the fill material. Sidewalls of the upwardly-opening container are removed, while leaving the fill material within the cavities as a plurality of vertically-stacked structures.

Abstract translation: 一些实施例包括形成垂直堆叠结构的方法，例如垂直堆叠的存储单元。 第一个硬掩模形成在交替导电水平和电绝缘水平的叠层上。 通过第一硬掩模和堆叠形成第一开口。 形成腔以延伸到导电水平。 填充材料形成在第一开口内并在空腔内。 在第一个硬掩模和填充材料上形成第二个硬掩模。 通过第二硬掩模形成第二个开口。 第二个开口比第一个开口窄。 第二开口延伸到填充材料中以从填充材料形成向上开口的容器。 去除向上开口的容器的侧壁，同时将填充材料留在空腔内作为多个垂直堆叠的结构。

公开(公告)号：US20140162418A1

公开(公告)日：2014-06-12

申请号：US13708789

申请日：2012-12-07

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Saurabh Keshav ,  Scott Pook ,  Fatma Arzum Simsek-Ege

IPC: H01L29/66

CPC classification number: H01L29/66833 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/7889 ,  H01L29/7926

Abstract: Some embodiments include methods of forming vertically-stacked structures, such as vertically-stacked memory cells. A first hardmask is formed over a stack of alternating electrically conductive levels and electrically insulative levels. A first opening is formed through the first hardmask and the stack. Cavities are formed to extend into the electrically conductive levels. A fill material is formed within the first opening and within the cavities. A second hardmask is formed over the first hardmask and over the fill material. A second opening is formed through the second hardmask. The second opening is narrower than the first opening. The second opening is extended into the fill material to form an upwardly-opening container from the fill material. Sidewalls of the upwardly-opening container are removed, while leaving the fill material within the cavities as a plurality of vertically-stacked structures.

Abstract translation: 一些实施例包括形成垂直堆叠结构的方法，例如垂直堆叠的存储单元。 第一个硬掩模形成在交替导电水平和电绝缘水平的叠层上。 通过第一硬掩模和堆叠形成第一开口。 形成腔以延伸到导电水平。 填充材料形成在第一开口内并在空腔内。 在第一个硬掩模和填充材料上形成第二个硬掩模。 通过第二硬掩模形成第二个开口。 第二个开口比第一个开口窄。 第二开口延伸到填充材料中以从填充材料形成向上开口的容器。 去除向上开口的容器的侧壁，同时将填充材料留在空腔内作为多个垂直堆叠的结构。