公开(公告)号：US09672920B2

公开(公告)日：2017-06-06

申请号：US14657084

申请日：2015-03-13

Applicant: Macronix International Co., Ltd.

Inventor： Chih-Chang Hsieh ,  Ti Wen Chen ,  Yungchun Li ,  Hang Ting Lue

IPC: G11C16/10 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C16/3427 ,  G11C16/3459

Abstract: This disclosure provides a memory device. The memory device includes a plurality of memory cells and a control circuit coupled to the memory cells. The control circuit is configured to provide a first programming voltage to the memory cells; verify the memory cells against an interim level verify voltage to divide the memory cells into a first group of memory cells and a second group of memory cells according to whether the memory cells do not reach or do reach the interim level verify voltage, respectively; provide a second programming voltage to the first group of memory cells and inhibit the second group of memory cells from receiving the second programming voltage, the second programming voltage being greater than or equal to the first programming voltage; and verify the first group of memory cells and the second group of memory cells against a desired level voltage.