Abstract:
Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.
Abstract:
A water treatment feed device includes a hopper and a receptacle. The hopper has a granule-receiving compartment defined by an upper hopper portion and a lower V-shaped hopper portion connected to the upper hopper portion. The lower V-shaped hopper portion is fabricated from a porous material having a plurality of pores sized to at least substantially retain conventional water treatment granules therein. The receptacle has a water-receiving compartment with a weir disposed therein to divide the water-receiving compartment into a water inlet sub-compartment and a water outlet sub-compartment with the water inlet sub-compartment sized to receive the hopper loaded with conventional water treatment granules. A water treatment feed system and a method for dissolving conventional water treatment granules in water are also described.