公开(公告)号：US08912090B2

公开(公告)日：2014-12-16

申请号：US14047551

申请日：2013-10-07

Applicant: Marki Microwave, Inc.

Inventor： Christopher Ferenc Marki

IPC: H01L21/00 ,  H01L21/4763 ,  H03D7/02 ,  H05K3/30 ,  H05K1/02 ,  H03H1/00 ,  H05K3/46 ,  H05K1/03 ,  H05K1/16

CPC classification number: H03D7/02 ,  H01P5/10 ,  H03D7/1408 ,  H03D7/1458 ,  H03D7/1466 ,  H03D2200/0023 ,  H03H1/00 ,  H05K1/0243 ,  H05K1/0306 ,  H05K1/165 ,  H05K3/30 ,  H05K3/4605 ,  H05K2201/10174 ,  Y10T29/49128

Abstract: An improved microwave mixer manufactured using multilayer processing includes an integrated circuit that is electrically connected to a top metal layer of a substrate. The microwave mixer includes: a first metal layer; a dielectric substrate on the first metal layer; a second metal layer directly on the substrate, at least two passive circuits arranged on the second metal layer and a top layer metal; a thin dielectric layer on the second metal layer, wherein the top layer metal is directly on the thin dielectric layer; an integrated circuit (IC) attached to the second metal layer, wherein the IC includes at least one combination of non-linear devices, and wherein the IC is directly connected to the passive circuits on the second metal layer; and a protection layer on the IC.

Abstract translation: 使用多层处理制造的改进的微波混频器包括电连接到衬底的顶部金属层的集成电路。 微波混合器包括：第一金属层; 第一金属层上的电介质基板; 直接在所述基板上的第二金属层，布置在所述第二金属层上的至少两个无源电路和顶层金属; 在所述第二金属层上的薄介电层，其中所述顶层金属直接在所述薄介电层上; 连接到所述第二金属层的集成电路（IC），其中所述IC包括非线性器件的至少一种组合，并且其中所述IC直接连接到所述第二金属层上的无源电路; 和IC上的保护层。

公开(公告)号：US11869858B2

公开(公告)日：2024-01-09

申请号：US17569460

申请日：2022-01-05

Applicant: Marki Microwave, Inc.

Inventor： Christopher Ferenc Marki ,  Jeff Luu ,  Douglas Ryan Jorgesen

IPC: H01L23/495 ,  H01L23/538 ,  H01L23/66 ,  H01L23/055 ,  H01L23/498 ,  H01L21/50

CPC classification number: H01L23/66 ,  H01L21/50 ,  H01L23/49531 ,  H01L23/5384

Abstract: Microwave packaging uses signal vias and interposers, such as metal lead frame interposers. For example, the microwave circuit die includes signal vias that electrically connect the top side and the bottom side of the die. Microwave signal circuitry on the die have signal paths that are electrically connected to the top side of the signal vias. The microwave signal circuitry typically may have an operating frequency of 300 MHz or faster. The bottom side of the signal vias are electrically connected to corresponding areas on the top side of the interposer. The bottom side of the die may also include a ground plane, with ground vias that electrically connect the top side of the die to the ground plane.

公开(公告)号：US20230215823A1

公开(公告)日：2023-07-06

申请号：US17569460

申请日：2022-01-05

Applicant: Marki Microwave, Inc.

Inventor： Christopher Ferenc Marki ,  Jeff Luu ,  Douglas Ryan Jorgesen

IPC: H01L23/66 ,  H01L21/50 ,  H01L23/495 ,  H01L23/538

CPC classification number: H01L23/66 ,  H01L21/50 ,  H01L23/49531 ,  H01L23/5384

Abstract: Microwave packaging uses signal vias and interposers, such as metal lead frame interposers. For example, the microwave circuit die includes signal vias that electrically connect the top side and the bottom side of the die. Microwave signal circuitry on the die have signal paths that are electrically connected to the top side of the signal vias. The microwave signal circuitry typically may have an operating frequency of 300 MHz or faster. The bottom side of the signal vias are electrically connected to corresponding areas on the top side of the interposer. The bottom side of the die may also include a ground plane, with ground vias that electrically connect the top side of the die to the ground plane.

公开(公告)号：US20140097882A1

公开(公告)日：2014-04-10

申请号：US14047551

申请日：2013-10-07

Applicant: Marki Microwave, Inc.

Inventor： Christopher Ferenc Marki

IPC: H03D7/02 ,  H05K3/30

CPC classification number: H03D7/02 ,  H01P5/10 ,  H03D7/1408 ,  H03D7/1458 ,  H03D7/1466 ,  H03D2200/0023 ,  H03H1/00 ,  H05K1/0243 ,  H05K1/0306 ,  H05K1/165 ,  H05K3/30 ,  H05K3/4605 ,  H05K2201/10174 ,  Y10T29/49128

Abstract: An improved microwave mixer manufactured using multilayer processing includes an integrated circuit that is electrically connected to a top metal layer of a substrate. The microwave mixer includes: a first metal layer; a dielectric substrate on the first metal layer; a second metal layer directly on the substrate, at least two passive circuits arranged on the second metal layer and a top layer metal; a thin dielectric layer on the second metal layer, wherein the top layer metal is directly on the thin dielectric layer; an integrated circuit (IC) attached to the second metal layer, wherein the IC includes at least one combination of non-linear devices, and wherein the IC is directly connected to the passive circuits on the second metal layer; and a protection layer on the IC.

Abstract translation: 使用多层处理制造的改进的微波混频器包括电连接到衬底的顶部金属层的集成电路。 微波混合器包括：第一金属层; 第一金属层上的电介质基板; 直接在所述基板上的第二金属层，布置在所述第二金属层上的至少两个无源电路和顶层金属; 在所述第二金属层上的薄介电层，其中所述顶层金属直接在所述薄介电层上; 连接到所述第二金属层的集成电路（IC），其中所述IC包括非线性器件的至少一个组合，并且其中所述IC直接连接到所述第二金属层上的无源电路; 和IC上的保护层。