Abstract:
An apparatus includes a first circuit and a second circuit. The first circuit may have a first diode and a second diode connected as anti-parallel diodes and physically adjacent to each other in a substrate. The second circuit may have a third diode and a fourth diode connected as anti-parallel diodes and physically adjacent to each other in the substrate. The first circuit and the second circuit may be configured to mix two input signals to generate an output signal. A polarity of every other physically neighboring diode may be reversed.
Abstract:
A receiving device includes a dividing circuit, N pieces of internal circuits, and an averaging circuit. The dividing circuit is configured to divide an input signal into N pieces of divided signals (where N is an integer of two or larger), and the N pieces of internal circuits are configured to receive and process the N pieces of divided signals. The averaging circuit is configured to receive N pieces of output signals from the N pieces of internal circuits, averaging the output signals, and output an averaged signal.
Abstract:
An improved microwave mixer manufactured using multilayer processing includes an integrated circuit that is electrically connected to a top metal layer of a substrate. The microwave mixer includes: a first metal layer; a dielectric substrate on the first metal layer; a second metal layer directly on the substrate, at least two passive circuits arranged on the second metal layer and a top layer metal; a thin dielectric layer on the second metal layer, wherein the top layer metal is directly on the thin dielectric layer; an integrated circuit (IC) attached to the second metal layer, wherein the IC includes at least one combination of non-linear devices, and wherein the IC is directly connected to the passive circuits on the second metal layer; and a protection layer on the IC.
Abstract:
In some embodiments, a system may include a passive uniplanar single-balanced millimeter-wave mixer. In some embodiments, a three-port diode-tee IC forming a mixer core is coupled between an end of a slotline balun and a second coplanar balun. The operational bandwidth of a mixer structure is enhanced by optimizing the distance between the mixer diode-tee core and the back-short circuits. The frequency separation of LO and IF signals may be accomplished by means of stand-alone three-port filter-diplexer device. The system may allow wider than a frequency octave operational bandwidth for a frequency converter device all the way into millimeter wave frequencies at the same time as supporting the operational bandwidth for baseband IF signal over more than six frequency octaves. In some embodiments, the system may accomplish a 500 MHz to 34.5 GHz continuous IF bandwidth with RF signal sweeping from 33 GHz to 67 GHz and local oscillator at 67.5 GHz fixed frequency.
Abstract:
A two-terminal semiconductor device is formed on a semiconductor substrate. Two wiring patterns are respectively connected to terminals of the semiconductor device, and two electrode pads are respectively connected to the wiring patterns for connecting a signal input/output circuit formed on a separate substrate. Two parallel wiring patterns are respectively connected to the wiring patterns, and two reactance-circuit connection electrode pads are respectively connected to the parallel wiring patterns for electrically connecting a reactance circuit formed on the separate substrate separately from the signal input/output circuit.
Abstract:
Provided is an even harmonic mixer which is reduced in cost and size. The even harmonic mixer includes: a transducer in which a conductor of a microstrip line is connected to a ground plane of a waveguide, for transducing an RF signal transmitted in a waveguide mode into a transmission mode of the microstrip line; an anti-parallel diode pair which is cascade-connected to a microstrip line side of the transducer, and formed on a semiconductor substrate; a branching circuit for branching an LO signal and an IF signal; an open-end stub which is disposed between the transducer and the anti-parallel diode pair, and has a line length of about ½ wavelength at an RF signal frequency; and an open-end stub which is disposed between the anti-parallel diode pair and the branching circuit, and has a line length of about ¼ wavelength at the RF signal frequency.
Abstract:
Provided is an even harmonic mixer which is reduced in cost and size. The even harmonic mixer includes: a transducer in which a conductor of a microstrip line is connected to a ground plane of a waveguide, for transducing an RF signal transmitted in a waveguide mode into a transmission mode of the microstrip line; an anti-parallel diode pair which is cascade-connected to a microstrip line side of the transducer, and formed on a semiconductor substrate; a branching circuit for branching an LO signal and an IF signal; an open-end stub which is disposed between the transducer and the anti-parallel diode pair, and has a line length of about ½ wavelength at an RF signal frequency; and an open-end stub which is disposed between the anti-parallel diode pair and the branching circuit, and has a line length of about ¼ wavelength at the RF signal frequency.
Abstract:
A miniaturized dual-balanced mixer circuit based on a trifilar layout architecture is proposed, which is designed for use to provide a frequency mixing function for millimeter wave (MMW) signals, and which features a downsized circuit layout architecture that allows IC implementation to be more miniaturized than the conventional star-type dual-balanced mixer (DBM). The proposed miniaturized dual-balanced mixer circuit is distinguished from the conventional star-type DBM particularly in the use of a trifilar layout architecture for the layout of two balun circuit units. This feature allows the required layout area to be only about 20% of that of the conventional star-type DBM.
Abstract:
The present invention utilizes an even harmonic mixer for canceling a local oscillator (LO) leakage signal. The apparatus for canceling the LO leakage signal includes an in-phase divider, an intermediate frequency (IF) phase divider, an even harmonic mixers, an RF signal phase combiner and a band pass filter (BPF). The in-phase divider divides an LO signal into two in-phase LO signals, wherein the LO signal is inputted from an exterior LO. The IF phase divider divides an IF signal into two out-of-phase IF signals of which a phase difference is 90null, wherein the IF signal is inputted from an exterior means. The even harmonic mixer outputs two out-of phase RF signals of which the phase difference is 90null, after even-harmonic mixing of two in-phase LO signals divided by the in-phase divider and two out-of-phase IF signals divided by the IF phase divider. The RF signal phase combiner plays a role in canceling an image signal in the RF signal by combining two out-of-phase RF signals outputted from the even harmonic mixer. The BPF is used for canceling a residual component of the leakage signal in the RF signal outputted from the RF signal phase combiner.
Abstract:
Mixer circuitry having a semiconductor body formed therein mixer circuitry having an oscillator having a heterojunction bipolar transistor and a mixer having a Schottky diode. The heterojunction transistor has a collector region formed in one portion of doped layer of the semiconductor body and the diode has a metal electrode is Schottky contact with another portion of such doped layer. The mixer is includes a diode and a DC biasing circuit, comprising a constant current, for biasing such diode to predetermined operating point substantially invariant with power of an input signal fed to such mixer.