公开(公告)号：US08389411B2

公开(公告)日：2013-03-05

申请号：US13119985

申请日：2009-10-05

申请人： Masahiko Ishida ,  Naoki Morimoto ,  Kouji Sokabe

发明人： Masahiko Ishida ,  Naoki Morimoto ,  Kouji Sokabe

IPC分类号： H01L21/311

CPC分类号： H01L21/6831 ,  H01L21/67253

摘要： The electrostatic chuck is made up of: a chuck main body having electrodes; a chuck plate of a dielectric material and having a rib portion with which a peripheral edge portion of the substrate is capable of coming into surface contact, and a plurality of supporting portions which are vertically disposed at a predetermined distance from one another in an inner space enclosed by the rib portion; and a gas introduction means for introducing a predetermined gas into the inner space. When the substrate is held by the electrostatic chuck which is arranged to attract the substrate by the chuck plate and to form a gas atmosphere by supplying a predetermined gas into the inner space, a current value is monitored by causing an AC current to flow in a capacitance of the chuck plate through an AC power supply, a gas flow amount is monitored by causing the gas to flow through the gas introduction means, and a substrate state is managed based on a variation in at least one of the current value and the gas flow amount to prevent damages to the substrate.

摘要翻译： 静电卡盘由具有电极的卡盘主体构成; 介电材料的卡盘板，具有能够与基板的周缘部进行表面接触的肋部，以及在内部空间中彼此以规定距离垂直配置的多个支撑部 由肋部包围; 以及用于将预定气体引入内部空间的气体引入装置。 当基板被设置成通过卡盘板吸引基板的静电卡盘保持并且通过将预定的气体供应到内部空间来形成气体气氛时，通过使AC电流在 通过交流电源对卡盘板的电容进行监测，通过使气体流过气体引入装置来监测气体流量，并且基于电流值和气体中的至少一个的变化来管理基板状态 流量以防止损坏基板。

公开(公告)号：US20110201139A1

公开(公告)日：2011-08-18

申请号：US13119985

申请日：2009-10-05

申请人： Masahiko Ishida ,  Naoki Morimoto ,  Kouji Sokabe

发明人： Masahiko Ishida ,  Naoki Morimoto ,  Kouji Sokabe

IPC分类号： H01L21/02

CPC分类号： H01L21/6831 ,  H01L21/67253

摘要： The electrostatic chuck is made up of: a chuck main body having electrodes; a chuck plate of a dielectric material and having a rib portion with which a peripheral edge portion of the substrate is capable of coming into surface contact, and a plurality of supporting portions which are vertically disposed at a predetermined distance from one another in an inner space enclosed by the rib portion; and a gas introduction means for introducing a predetermined gas into the inner space. When the substrate is held by the electrostatic chuck which is arranged to attract the substrate by the chuck plate and to form a gas atmosphere by supplying a predetermined gas into the inner space, a current value is monitored by causing an AC current to flow in a capacitance of the chuck plate through an AC power supply, a gas flow amount is monitored by causing the gas to flow through the gas introduction means, and a substrate state is managed based on a variation in at least one of the current value and the gas flow amount to prevent damages to the substrate.

摘要翻译： 静电卡盘由具有电极的卡盘主体构成; 介电材料的卡盘板，具有能够与基板的周缘部进行表面接触的肋部，以及在内部空间中彼此以规定距离垂直配置的多个支撑部 由肋部包围; 以及用于将预定气体引入内部空间的气体引入装置。 当基板被设置成通过卡盘板吸引基板的静电卡盘保持并且通过将预定的气体供应到内部空间来形成气体气氛时，通过使AC电流在 通过交流电源对卡盘板的电容进行监测，通过使气体流过气体引入装置来监测气体流量，并且基于当前值和气体中的至少一个的变化来管理基板状态 流量以防止损坏基板。

公开(公告)号：US08817449B2

公开(公告)日：2014-08-26

申请号：US13634316

申请日：2011-03-16

申请人： Naoki Morimoto ,  Masahiko Ishida

发明人： Naoki Morimoto ,  Masahiko Ishida

IPC分类号： H01L21/683

CPC分类号： H01L21/6831

摘要： A substrate holding device for clamping a substrate in a processing chamber in which plasma processing is carried out includes a chuck main body having positive and negative electrodes and, a chuck plate having a rib portion capable of bringing the peripheral edge portion of the substrate into surface contact therewith and multiple support portions provided upright and arranged at predetermined intervals in an internal space surrounded by the rib portion, a DC power supply for applying a DC voltage between the two electrodes, an AC power supply for passing an alternating current through the capacitance of the chuck plate, and first measuring means for measuring the alternating current passing through the capacitance of the chuck plate, and further includes removing means for removing an AC component superimposed on the alternating current from a plasma produced in the processing chamber during plasma processing.

摘要翻译： 用于在执行等离子体处理的处理室中夹持基板的基板保持装置包括具有正极和负极的卡盘主体，以及具有能够使基板的周边部分成为表面的肋部的卡盘板 与其直接连接并且设置在由肋部包围的内部空间中的直立设置的多个支撑部，用于在两个电极之间施加直流电压的直流电源，用于使交流电流通过电容的交流电源 卡盘板和用于测量通过卡盘板电容的交流电流的第一测量装置，还包括用于从等离子体处理期间由处理室中产生的等离子体移除叠加在交流电上的交流分量的去除装置。

公开(公告)号：US09209001B2

公开(公告)日：2015-12-08

申请号：US13634328

申请日：2011-03-16

申请人： Naoki Morimoto ,  Masahiko Ishida

发明人： Naoki Morimoto ,  Masahiko Ishida

IPC分类号： C23C14/34 ,  C23C14/54 ,  C23C14/50 ,  H01J37/34

CPC分类号： H01J37/3438 ,  C23C14/34 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/50 ,  C23C14/542 ,  H01J37/3405 ,  H01L21/6833

摘要： A sputtering apparatus includes: a vacuum chamber in which a target is to be disposed; a power supply to input power to the target; gas introduction device; exhaust device; and substrate holding device to hold a substrate to be processed. The substrate holding device includes: a chuck main body having positive and negative electrodes; a chuck plate having a rib portion capable of bringing a peripheral edge portion of the substrate into surface contact with the rib portion; and a multiplicity of supporting portions provided upright and arranged at predetermined intervals in an interior space surrounded by the rib portion; and a DC power supply to apply a direct voltage between the two electrodes. The sputtering apparatus suppresses a variation in film thickness among substrates.

摘要翻译： 溅射装置包括：真空室，其中设置有靶; 用于向目标输入电力的电源; 气体引入装置; 排风装置; 以及用于保持待处理基板的基板保持装置。 基板保持装置包括：具有正极和负极的卡盘主体; 具有能够使基板的周缘部与肋部表面接触的肋部的卡盘板; 以及多个支撑部分，其设置成直立并以预定间隔布置在由所述肋部分包围的内部空间中; 以及在两个电极之间施加直流电压的直流电源。 溅射装置抑制基板之间的膜厚变化。

公开(公告)号：US20110256810A1

公开(公告)日：2011-10-20

申请号：US13130595

申请日：2009-12-09

申请人： Takahiro Nanba ,  Naoki Morimoto ,  Kouji Sogabe ,  Masahiko Ishida

发明人： Takahiro Nanba ,  Naoki Morimoto ,  Kouji Sogabe ,  Masahiko Ishida

IPC分类号： B24C1/00

CPC分类号： H01L21/6833 ,  H01L21/68757

摘要： There is provided a method of manufacturing a chuck plate for an electrostatic chuck of good productivity which is free from poor releasing of a wafer which is a to-be-processed substrate, from the initial time of putting the electrostatic chuck to a new use. The method of manufacturing a chuck plate for electrostatic chuck ES which is made up of a dielectric body to cover a surface of the chuck main body having electrodes, includes the steps of: obtaining a sintered body by compression-forming raw material powder (or raw meal) into a predetermined shape and then sintering the same; forming, by polishing, such a surface of the sintered body as will come into contact with a substrate to be attracted, into a predetermined surface roughness and flatness; and performing blast processing for selectively removing only ready-to-be-separated particles that come into existence on the surface as a result of the polishing.

摘要翻译： 提供了一种制造用于静电卡盘的卡盘板的方法，该静电卡盘盘从高静电卡盘的初始时间开始到新的用途，该静电卡盘的卡盘板具有良好的生产率，该卡盘板不需要被处理的基板的晶片的释放不良。 制造由电介质体覆盖具有电极的卡盘主体的表面的静电卡盘ES的卡盘的方法包括以下步骤：通过压缩成形原料粉末（或未加工的原料粉末）获得烧结体 膳食）成预定形状，然后烧结它们; 通过抛光将烧结体的与待吸附的基板接触的表面形成为预定的表面粗糙度和平坦度; 并且进行喷砂处理，以便仅选择性地除去作为抛光的结果而在表面上存在的即将分离的颗粒。

公开(公告)号：US08357265B2

公开(公告)日：2013-01-22

申请号：US12269438

申请日：2008-11-12

申请人： Kouji Sogabe ,  Naoki Morimoto ,  Masahiko Ishida

发明人： Kouji Sogabe ,  Naoki Morimoto ,  Masahiko Ishida

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： C23C16/4586 ,  C23C16/4405 ,  H01J37/32862 ,  Y10T279/23

摘要： To provide a technique which cleans an attracting face of a mechanism for electrostatically attracting an object to be processed inside a vacuum processing apparatus and keeps its attracting force constant. The method of the present invention is for cleaning an attracting face of a hot plate which holds the object to be processed inside a vacuum processing chamber through electrostatic attraction. The invention method includes a step of cleaning the attracting face of the hot plate by applying a high-frequency electric power of 13.56 MHz to a metallic base arranged under and near the hot plate in a state in which a cleaning gas is introduced into the vacuum processing chamber.

摘要翻译： 提供一种清洁真空处理装置内静电吸附被处理物的机构的吸引面并保持其吸引力恒定的技术。 本发明的方法是通过静电吸引来清洁在真空处理室内保持待处理物体的热板的吸附面。 本发明的方法包括以下步骤：在将清洁气体引入真空的状态下，将13.56MHz的高频电力施加到布置在热板下方和附近的金属基底上，来清洁热板的吸附面 处理室。

公开(公告)号：US20130003250A1

公开(公告)日：2013-01-03

申请号：US13634316

申请日：2011-03-16

申请人： Naoki Morimoto ,  Masahiko Ishida

发明人： Naoki Morimoto ,  Masahiko Ishida

IPC分类号： H01L21/687

CPC分类号： H01L21/6831

摘要： A substrate holding device for clamping a substrate in a processing chamber in which plasma processing is carried out includes a chuck main body having positive and negative electrodes and, a chuck plate having a rib portion capable of bringing the peripheral edge portion of the substrate into surface contact therewith and multiple support portions provided upright and arranged at predetermined intervals in an internal space surrounded by the rib portion, a DC power supply for applying a DC voltage between the two electrodes, an AC power supply for passing an alternating current through the capacitance of the chuck plate, and first measuring means for measuring the alternating current passing through the capacitance of the chuck plate, and further includes removing means for removing an AC component superimposed on the alternating current from a plasma produced in the processing chamber during plasma processing.

摘要翻译： 用于在执行等离子体处理的处理室中夹持基板的基板保持装置包括具有正极和负极的卡盘主体，以及具有能够使基板的周边部分成为表面的肋部的卡盘板 与其直接连接并且设置在由肋部包围的内部空间中的直立设置的多个支撑部，用于在两个电极之间施加直流电压的直流电源，用于使交流电流通过电容的交流电源 卡盘板和用于测量通过卡盘板电容的交流电流的第一测量装置，还包括用于从等离子体处理期间由处理室中产生的等离子体移除叠加在交流电上的交流分量的去除装置。

公开(公告)号：US20130001075A1

公开(公告)日：2013-01-03

申请号：US13634328

申请日：2011-03-16

申请人： Naoki Morimoto ,  Masahiko Ishida

发明人： Naoki Morimoto ,  Masahiko Ishida

IPC分类号： C23C14/34

CPC分类号： H01J37/3438 ,  C23C14/34 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/50 ,  C23C14/542 ,  H01J37/3405 ,  H01L21/6833

摘要： A sputtering apparatus includes: a vacuum chamber in which a target is to be disposed; a power supply to input power to the target; gas introduction device; exhaust device; and substrate holding device to hold a substrate to be processed. The substrate holding device includes: a chuck main body having positive and negative electrodes; a chuck plate having a rib portion capable of bringing a peripheral edge portion of the substrate into surface contact with the rib portion; and a multiplicity of supporting portions provided upright and arranged at predetermined intervals in an interior space surrounded by the rib portion; and a DC power supply to apply a direct voltage between the two electrodes. The sputtering apparatus suppresses a variation in film thickness among substrates.

摘要翻译： 溅射装置包括：真空室，其中设置有靶; 用于向目标输入电力的电源; 气体引入装置; 排风装置; 以及用于保持待处理基板的基板保持装置。 基板保持装置包括：具有正极和负极的卡盘主体; 具有能够使基板的周缘部与肋部表面接触的肋部的卡盘板; 以及多个支撑部分，其设置成直立并以预定间隔布置在由所述肋部分包围的内部空间中; 以及在两个电极之间施加直流电压的直流电源。 溅射装置抑制基板之间的膜厚变化。

公开(公告)号：US20140230876A1

公开(公告)日：2014-08-21

申请号：US14232750

申请日：2012-07-10

申请人： Akihiro Kirihara ,  Masahiko Ishida ,  Takashi Manako ,  Kenichi Uchida ,  Eiji Saitoh

发明人： Akihiro Kirihara ,  Masahiko Ishida ,  Takashi Manako ,  Kenichi Uchida ,  Eiji Saitoh

IPC分类号： H01L37/04 ,  C30B7/02

CPC分类号： H01L37/04 ,  C30B7/02 ,  H01F10/24 ,  H01F10/265 ,  H01L37/00

摘要： A magnetic element according to the present invention is formed of a layered product having a magnetic insulator film formed on a substrate including a material having no crystal structure. The magnetic insulator film has a columnar crystal structure.

摘要翻译： 根据本发明的磁性元件由具有形成在包括不具有晶体结构的材料的基板上的磁性绝缘膜的层叠体形成。 磁性绝缘膜具有柱状晶体结构。

公开(公告)号：US08058112B2

公开(公告)日：2011-11-15

申请号：US12519949

申请日：2007-12-17

申请人： Masahiko Ishida

发明人： Masahiko Ishida

IPC分类号： H01L21/8238

CPC分类号： H01L51/0558 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0508

摘要： A semiconductor device having good switching characteristics even metallic CNTs are included and a manufacturing method thereof are provided. The semiconductor device includes a source electrode; a drain electrode; and a channel layer formed between the source electrode and the drain electrode and including a carbon nanotube group. The carbon nanotube group includes conductive carbon nanotubes having a characteristic of a conductive material and semiconductive carbon nanotubes having a characteristic of a semiconductive material. The density of the carbon nanotube group is the density where the source electrode and the drain electrode are connected to each other through all of the carbon nanotube group and not connected to each other only through the conductive carbon nanotubes.

摘要翻译： 包括具有甚至金属CNT的良好开关特性的半导体器件，并提供其制造方法。 半导体器件包括源电极; 漏电极; 以及形成在源电极和漏电极之间并且包括碳纳米管组的沟道层。 碳纳米管组包括具有导电材料特性的导电性碳纳米管和具有半导体材料特性的半导体碳纳米管。 碳纳米管组的密度是源电极和漏电极通过所有碳纳米管组彼此连接并且仅通过导电性碳纳米管彼此不连接的密度。