公开(公告)号：US07428907B2

公开(公告)日：2008-09-30

申请号：US10838926

申请日：2004-05-05

申请人： Seiichiro Okuda ,  Hiroaki Sugimoto ,  Takuya Kuroda ,  Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi ,  Masayoshi Imai

发明人： Seiichiro Okuda ,  Hiroaki Sugimoto ,  Takuya Kuroda ,  Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi ,  Masayoshi Imai

IPC分类号： B08B3/02

CPC分类号： H01L21/67046 ,  B08B1/04 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

摘要： The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

摘要翻译： 基板处理装置设置有气液混合喷嘴，用于通过混合液体和加压气体来产生处理液雾，以将处理液雾以高速排放到基板。 液体可以是去除液体，中间漂洗液体或去离子水。 在蚀刻过程中在基板上产生的反应产物随着雾的流动以高速度被去除，从而提高了工艺的质量。

公开(公告)号：US07267130B2

公开(公告)日：2007-09-11

申请号：US10836283

申请日：2004-05-03

申请人： Seiichiro Okuda ,  Hiroaki Sugimoto ,  Takuya Kuroda ,  Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi ,  Masayoshi Imai

发明人： Seiichiro Okuda ,  Hiroaki Sugimoto ,  Takuya Kuroda ,  Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi ,  Masayoshi Imai

IPC分类号： B08B3/02

CPC分类号： H01L21/67046 ,  B08B1/04 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

摘要： The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

摘要翻译： 基板处理装置设置有气液混合喷嘴，用于通过混合液体和加压气体来产生处理液雾，以将处理液雾以高速排放到基板。 液体可以是去除液体，中间漂洗液体或去离子水。 在蚀刻过程中在基板上产生的反应产物随着雾的流动以高速度被去除，从而提高了工艺的质量。

公开(公告)号：US06951221B2

公开(公告)日：2005-10-04

申请号：US09957652

申请日：2001-09-21

申请人： Seiichiro Okuda ,  Hiroaki Sugimoto ,  Takuya Kuroda ,  Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi ,  Masayoshi Imai

发明人： Seiichiro Okuda ,  Hiroaki Sugimoto ,  Takuya Kuroda ,  Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi ,  Masayoshi Imai

IPC分类号： B08B1/04 ,  B08B3/02 ,  H01L21/00

CPC分类号： H01L21/67046 ,  B08B1/04 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

摘要： The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

摘要翻译： 基板处理装置设置有气液混合喷嘴，用于通过混合液体和加压气体来产生处理液雾，以将处理液雾以高速排放到基板。 液体可以是去除液体，中间漂洗液体或去离子水。 在蚀刻过程中在基板上产生的反应产物随着雾的流动以高速度被去除，从而提高了工艺的质量。

公开(公告)号：US07479205B2

公开(公告)日：2009-01-20

申请号：US10841646

申请日：2004-05-10

申请人： Seiichiro Okuda ,  Hiroaki Sugimoto ,  Takuya Kuroda ,  Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi ,  Masayoshi Imai

发明人： Seiichiro Okuda ,  Hiroaki Sugimoto ,  Takuya Kuroda ,  Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi ,  Masayoshi Imai

IPC分类号： H01L21/027 ,  H01L21/44

CPC分类号： H01L21/67046 ,  B08B1/04 ,  B08B3/02 ,  B08B2203/0288

摘要： The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

公开(公告)号：US06901938B2

公开(公告)日：2005-06-07

申请号：US10699671

申请日：2003-11-04

申请人： Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi

发明人： Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi

IPC分类号： B08B1/04 ,  B08B3/02 ,  H01L21/00

CPC分类号： H01L21/67046 ,  B08B1/04 ,  B08B3/02 ,  B08B2203/0288 ,  Y10S134/902

摘要： The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a gas-liquid mixture by mixing a liquid and a pressurized gas, to discharge the gas-liquid mixture to a substrate at high speeds. The mixture process is conducted in an open space out of the nozzle, and change in the supply pressure of the gas does not affect the supply of the liquid. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the gas-liquid mixture, whereby the quality of the process is improved.

摘要翻译： 基板处理装置设置有气液混合喷嘴，用于通过混合液体和加压气体来产生气液混合物，以高速将气液混合物排放到基板。 混合过程在喷嘴外的开放空间中进行，并且气体的供应压力的变化不影响液体的供应。 在气相 - 液体混合物的流动下，高速地除去在蚀刻工艺中在基板上产生的反应产物，从而提高了工艺的质量。

公开(公告)号：US06705331B2

公开(公告)日：2004-03-16

申请号：US09987270

申请日：2001-11-14

申请人： Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi

发明人： Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda ,  Kenya Morinishi

IPC分类号： B09B302

CPC分类号： H01L21/67046 ,  B08B1/04 ,  B08B3/02 ,  B08B2203/0288 ,  Y10S134/902

摘要： The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a gas-liquid mixture by mixing a liquid and a pressurized gas, to discharge the gas-liquid mixture to a substrate at high speeds. The mixture process is conducted in an open space out of the nozzle, and change in the supply pressure of the gas does not affect the supply of the liquid. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the gas-liquid mixture, whereby the quality of the process is improved.

摘要翻译： 基板处理装置设置有气液混合喷嘴，用于通过混合液体和加压气体来产生气液混合物，以高速将气液混合物排放到基板。 混合过程在喷嘴外的开放空间中进行，并且气体的供应压力的变化不影响液体的供应。 在气相 - 液体混合物的流动下，高速地除去在蚀刻工艺中在基板上产生的反应产物，从而提高了工艺的质量。

公开(公告)号：US07600522B2

公开(公告)日：2009-10-13

申请号：US12397632

申请日：2009-03-04

申请人： Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda

发明人： Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda

IPC分类号： B08B3/00

CPC分类号： H01L21/02052 ,  H01L21/67051

摘要： A substrate treatment method including the steps of: generating droplets of a treatment liquid by mixing the treatment liquid with a gas; and causing the treatment liquid droplets generated in the liquid droplet generating step to impinge on a surface of a substrate being treated. The treatment liquid droplets have a volume median diameter of 5 μm to 40 μm.

摘要翻译： 一种基板处理方法，包括以下步骤：通过将处理液与气体混合来产生处理液的液滴; 并且使得在液滴产生步骤中产生的处理液滴撞击正被处理的基板的表面。 处理液滴的体积中值粒径为5〜40μm。

公开(公告)号：US20090165828A1

公开(公告)日：2009-07-02

申请号：US12397632

申请日：2009-03-04

申请人： Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda

发明人： Masanobu Sato ,  Sadao Hirae ,  Shuichi Yasuda

IPC分类号： B08B3/02

CPC分类号： H01L21/02052 ,  H01L21/67051

摘要： A substrate treatment method including the steps of: generating droplets of a treatment liquid by mixing the treatment liquid with a gas; and causing the treatment liquid droplets generated in the liquid droplet generating step to impinge on a surface of a substrate being treated. The treatment liquid droplets have a volume median diameter of 5 μm to 40 μm.

摘要翻译： 一种基板处理方法，包括以下步骤：通过将处理液与气体混合来产生处理液的液滴; 并且使得在液滴产生步骤中产生的处理液滴撞击正被处理的基板的表面。 处理液滴的体积中值粒径为5〜40μm。

公开(公告)号：US06729561B2

公开(公告)日：2004-05-04

申请号：US09976134

申请日：2001-10-11

申请人： Sadao Hirae ,  Masanobu Sato ,  Shuichi Yasuda

发明人： Sadao Hirae ,  Masanobu Sato ,  Shuichi Yasuda

IPC分类号： B05B704

CPC分类号： H01L21/67051 ,  B05B7/0433 ,  Y10S239/08

摘要： A cleaning nozzle includes a mixing portion with inner walls thereof formed of quartz given smoothing treatment. As a result, the inner walls of the mixing portion have smooth surfaces. This construction effectively suppresses abrasion of the inner walls of the mixing portion, and particle generation from the cleaning nozzle. Further, the cleaning nozzle has a supply pipe surrounding a gas introduction pipe. This reduces areas of contact in the mixing portion between a gas and inner walls of the cleaning nozzle, to suppress particle generation with increased effect.

摘要翻译： 清洁喷嘴包括具有由其进行平滑处理的由石英形成的内壁的混合部分。 结果，混合部分的内壁具有光滑的表面。 这种结构有效地抑制了混合部分的内壁磨损，并且从清洗喷嘴产生颗粒。 此外，清洁喷嘴具有围绕气体导入管的供给管。 这减少了气体与清洁喷嘴的内壁之间的混合部分的接触面积，从而以增加的效果抑制了颗粒的产生。

公开(公告)号：US20050229946A1

公开(公告)日：2005-10-20

申请号：US11157330

申请日：2005-06-15

申请人： Sadao Hirae ,  Masanobu Sato ,  Shuichi Yasuda

发明人： Sadao Hirae ,  Masanobu Sato ,  Shuichi Yasuda

IPC分类号： B08B3/08 ,  B08B7/00 ,  H01L21/00 ,  H01L21/306 ,  B08B3/12

CPC分类号： B08B3/08 ,  B08B7/0057 ,  B08B2203/005 ,  G03F1/82 ,  H01L21/02052 ,  H01L21/67051

摘要： A substrate treating method for cleaning a substrate by supplying a cleaning solution thereto. The method comprises the steps of supplying the cleaning solution having ozone dissolved therein to the substrate, and irradiating the cleaning solution with ultraviolet light. By irradiating the cleaning solution having ozone dissolved therein with ultraviolet light, oxygen radicals are generated easily to increase the activity of the cleaning solution. Thus, a significantly improved cleaning capability is achieved even with low concentration ozone water. This method is applicable also to a piecemeal treatment for cleaning large substrates. Since the cleaning solution supplied to the substrate contains ozone in a low concentration, a filter and piping materials for supplying the cleaning solution need not have strong ozone resistance.

摘要翻译： 一种用于通过向其提供清洁溶液来清洁基板的基板处理方法。 该方法包括以下步骤：将具有溶解在其中的臭氧的清洗溶液供给到基板上，并用紫外线照射清洗液。 通过用紫外线照射其中溶解有臭氧的清洁溶液，容易产生氧自由基以增加清洁溶液的活性。 因此，即使使用低浓度臭氧水也可实现显着改善的清洗能力。 该方法也适用于清洗大基材的零碎处理。 由于供给到基板的清洗液含有低浓度的臭氧，所以用于供给清洗液的过滤器和管道材料不需要具有很强的耐臭氧性。