Bit error management in memory devices

    公开(公告)号:US12189949B2

    公开(公告)日:2025-01-07

    申请号:US18049121

    申请日:2022-10-24

    Abstract: In some implementations, a memory device may receive a command to read data in a first format from non-volatile memory, the data being stored in a second format in the non-volatile memory, the second format comprising a plurality of copies of the data in the first format. The memory device may compare, using an error correction circuit, the plurality of copies of the data to determine a dominant bit state for bits of the data. The memory device may store the dominant bit state for bits of the data in the non-volatile memory as error-corrected data in the first format. The memory device may cause the error-corrected data to be read from the non-volatile memory in the first format as a response to the command to read the data in the first format.

    CROSS-COMPARISON OF DATA COPY PAIRS DURING MEMORY DEVICE INITIALIZATION

    公开(公告)号:US20240231670A1

    公开(公告)日:2024-07-11

    申请号:US18509587

    申请日:2023-11-15

    CPC classification number: G06F3/065 G06F3/0619 G06F3/0679

    Abstract: A memory device includes a local memory to store operational data and comparison logic operatively coupled with the local memory. The comparison logic, upon initialization of the memory device, compares, to detect any errors in the operational data, one copy of a first copy pair with one copy of a second copy pair of the operational data, the first copy pair including a first copy and an inverted first copy and the second copy pair including a second copy and an inverted second copy of the operational data. The comparison logic further reports an error in response to detecting the first copy pair does not match the second copy pair.

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