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公开(公告)号：US11508447B2
公开(公告)日：2022-11-22
申请号：US17344141
申请日：2021-06-10
发明人： Tommaso Vali , Ramin Ghodsi
摘要： Memories might include a plurality of strings of memory cells, a plurality of access lines each connected to the strings of memory cells, and a controller configured to cause the memory to determine a particular voltage level applied to each of the access lines that is deemed to activate each memory cell of a first subset of the strings of series-connected memory cells programmed to store respective data states that are each lower than or equal to a first data state of a plurality of data states, apply the particular voltage level to a particular access line of the plurality of access lines, and for each memory cell connected to the particular access line that is contained in a second subset of the strings of series-connected memory cells, determine whether that memory cell is deemed to be activated while applying the particular voltage level to the particular access line.
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公开(公告)号：US20220122665A1
公开(公告)日：2022-04-21
申请号：US17542562
申请日：2021-12-06
摘要： Memory devices might include a plurality of memory cell pairs each configured to be programmed to store a digit of data; and control circuitry configured to cause the memory device to compare the stored digit of data of each memory cell pair to a received digit of data, determine whether a match condition or a no-match condition is indicated between the stored digit of data of each memory cell pair and the received digit of data, and deem a match condition to be met between the received digit of data and the stored digits of data of the plurality of memory cell pairs in response to a match condition being determined for a majority of memory cell pairs of the plurality of memory cell pairs.
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公开(公告)号：US20210090656A1
公开(公告)日：2021-03-25
申请号：US17111721
申请日：2020-12-04
发明人： Umberto Minucci , Tommaso Vali , Fernanda Irrera , Luca De Santis
摘要： A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.
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公开(公告)号：US10891188B2
公开(公告)日：2021-01-12
申请号：US16516611
申请日：2019-07-19
IPC分类号： G11C29/00 , G06F11/10 , G11C11/56 , G11C16/04 , G11C16/10 , G06F3/06 , G06F12/02 , G06F12/06 , G11C29/52
摘要： A memory device has a plurality of individually erasable blocks of memory cells and a controller configured to configure a first block of memory cells of the plurality of blocks of memory cells in a first configuration comprising one or more groups of overhead data memory cells, to configure a second block of memory cells of the plurality of blocks of memory cells in a second configuration comprising a group of user data memory cells and a group of overhead data memory cells, and to configure a third block of memory cells of the plurality of blocks of memory cells in a third configuration comprising only a group of user data memory cells. The group of overhead data memory cells of the second block of memory cells has a different storage capacity than at least one group of overhead data memory cells of the one or more groups of overhead data memory cells of the first block of memory cells.
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公开(公告)号：US10776362B2
公开(公告)日：2020-09-15
申请号：US16113055
申请日：2018-08-27
发明人： Luca De Santis , Giulio G. Marotta , Marco-Domenico Tiburzi , Tommaso Vali , Frankie F. Roohparvar , Agostino Macerola
IPC分类号： G06F3/06 , G06F16/2455 , G11C16/06 , G11C7/10 , G11C15/04 , G11C16/04 , G06F7/20 , G06F12/0802 , G11C29/50
摘要： Memory devices for facilitating pattern matching and having an array of memory cells, a plurality of key registers to store a representation of a key word, and a plurality of multiplexers, each multiplexer of the plurality of multiplexers to select a representation of a bit from a key register of the plurality of key registers to compare to data stored in the array of memory cells.
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公开(公告)号：US10712960B2
公开(公告)日：2020-07-14
申请号：US16166231
申请日：2018-10-22
摘要： Memory devices, and methods of operating similar memory devices, include an array of memory cells comprising a plurality of access lines each configured for biasing control gates of a respective plurality of memory cells of the array of memory cells, wherein the respective plurality of memory cells for one access line of the plurality of access lines is mutually exclusive from the respective plurality of memory cells for each remaining access line of the plurality of access lines, and a controller having a plurality of selectively-enabled operating modes and configured to selectively operate the memory device using two or more concurrently enabled operating modes of the plurality of selectively-enabled operating modes for access of the array of memory cells, with each of the enabled operating modes of the two of more concurrently enabled operating modes utilizing an assigned respective portion of the array of memory cells.
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7.发明申请公开(公告)号：US20190341115A1
公开(公告)日：2019-11-07
申请号：US16515134
申请日：2019-07-18
摘要： Memory having an array of memory cells and a controller for access of the array of memory cells that is configured to generate a data value indicative of a level of a property sensed from a data line while applying potentials to control gates of memory cells of more than one string of series-connected memory cells connected to that data line.
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公开(公告)号：US20190267102A1
公开(公告)日：2019-08-29
申请号：US16410406
申请日：2019-05-13
发明人： Tommaso Vali , Luca De Santis , Ramin Ghodsi
摘要： Methods of operating a memory include determining a voltage level of a plurality of voltage levels at which a memory cell is deemed to first activate in response to applying the to a control gate of that memory cell for each memory cell of a plurality of memory cells, determining a plurality of voltage level distributions from numbers of memory cells of a first subset of memory cells deemed to first activate at each voltage level of the plurality of voltage levels, determining a transition between a pair of voltage level distributions for each adjacent pair of voltage level distributions, and assigning a respective data state to each memory cell of a second subset of memory cells responsive to the determined voltage level at which that memory cell is deemed to first activate and respective voltage levels of the transitions for each adjacent pair of voltage level distributions.
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公开(公告)号：US10261713B2
公开(公告)日：2019-04-16
申请号：US15945316
申请日：2018-04-04
摘要： Memory devices, and methods of operating similar memory devices, include an array of memory cells comprising a plurality of access lines each configured for biasing control gates of a respective plurality of memory cells of the array of memory cells, wherein the respective plurality of memory cells for one access line of the plurality of access lines is mutually exclusive from the respective plurality of memory cells for each remaining access line of the plurality of access lines, and a controller having a plurality of selectively-enabled operating modes and configured to selectively operate the memory device using two or more concurrently enabled operating modes of the plurality of selectively-enabled operating modes for access of the array of memory cells, with each of the enabled operating modes of the two of more concurrently enabled operating modes utilizing an assigned respective portion of the array of memory cells.
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公开(公告)号：US10068653B2
公开(公告)日：2018-09-04
申请号：US15241496
申请日：2016-08-19
摘要： Methods of operating memory include generating a data value indicative of a level of a property sensed from a data line while applying potentials to control gates of memory cells of more than one string of series-connected memory cells connected to that data line. Methods of operating memory further include generating data values indicative of levels of a property sensed from data lines while applying potentials to control gates of memory cells of strings of series-connected memory cells connected to those data lines, performing a logical operation on a set of data values comprising those data values, and determining a potential to be applied to control gates of different memory cells of those strings of series-connected memory cells in response to an output of the logical operation on the set of data values.
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