公开(公告)号：US20230345721A1

公开(公告)日：2023-10-26

申请号：US17660767

申请日：2022-04-26

Applicant: Micron Technology, Inc.

Inventor： Frank Speetjens ,  Yucheng Wang ,  Brendan Flynn ,  S M Istiaque Hossain ,  Tom J. John ,  Jeremy Adams

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: A microelectronic device includes tiers of alternating dielectric and conductive materials, a cap oxide material vertically adjacent to the tiers, and pillars extending vertically through the tiers. The cap oxide material is formulated to exhibit a different etch rate relative to an etch rate of the oxide material of the tiers. Additional microelectronic devices, microelectronic systems, and methods of forming a microelectronic device are also disclosed.