公开(公告)号：US10446507B2

公开(公告)日：2019-10-15

申请号：US15691303

申请日：2017-08-30

Applicant: Micron Technology, Inc.

Inventor： Hongbin Zhu ,  Qinglin Zeng ,  Daniel Osterberg ,  Merri L. Carlson ,  Gordon A. Haller ,  Jeremy Adams

IPC: H01L23/58 ,  H01L23/528 ,  H01L23/522 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor die comprising integrated circuitry over a substrate of a semiconductor material. A first die ring comprises one or more electrically conductive materials at least partially surrounding the integrated circuitry, the one or more electrically conductive materials comprising an electrically conductive path from proximate a surface of the substrate to an exposed surface of the semiconductor die. A second die ring comprises an electrically conductive material and is disposed around the first die ring. A first electrically conductive interconnect electrically connects the first die ring and to second die ring. Related semiconductor devices and semiconductor dice are disclosed.

公开(公告)号：US20240215246A1

公开(公告)日：2024-06-27

申请号：US18596580

申请日：2024-03-05

Applicant: Micron Technology, Inc.

Inventor： Swapnil A. Lengade ,  Jeremy Adams ,  Naiming Liu ,  Jeslin J. Wu ,  Kadir Abdul ,  Carlo Mendoza Orofeo

IPC: H10B43/27 ,  H01L21/02 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/02274 ,  H10B41/27

Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US20190067216A1

公开(公告)日：2019-02-28

申请号：US15691303

申请日：2017-08-30

Applicant: Micron Technology, Inc.

Inventor： Hongbin Zhu ,  Qinglin Zeng ,  Daniel Osterberg ,  Merri L. Carlson ,  Gordon A. Haller ,  Jeremy Adams

IPC: H01L23/58 ,  H01L23/528 ,  H01L23/522 ,  H01L23/00

CPC classification number: H01L23/585 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/562

Abstract: A semiconductor device includes a semiconductor die comprising integrated circuitry over a substrate of a semiconductor material. A first die ring comprises one or more electrically conductive materials at least partially surrounding the integrated circuitry, the one or more electrically conductive materials comprising an electrically conductive path from proximate a surface of the substrate to an exposed surface of the semiconductor die. A second die ring comprises an electrically conductive material and is disposed around the first die ring. A first electrically conductive interconnect electrically connects the first die ring and to second die ring. Related semiconductor devices and semiconductor dice are disclosed.

公开(公告)号：US12004346B2

公开(公告)日：2024-06-04

申请号：US17200169

申请日：2021-03-12

Applicant: Micron Technology, Inc.

Inventor： Swapnil Lengade ,  Jeremy Adams ,  Naiming Liu ,  Jeslin J. Wu ,  Kadir Abdul ,  Carlo Mendoza Orofeo

IPC: H10B43/27 ,  H01L21/02 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/02274 ,  H10B41/27

Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US20230345721A1

公开(公告)日：2023-10-26

申请号：US17660767

申请日：2022-04-26

Applicant: Micron Technology, Inc.

Inventor： Frank Speetjens ,  Yucheng Wang ,  Brendan Flynn ,  S M Istiaque Hossain ,  Tom J. John ,  Jeremy Adams

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: A microelectronic device includes tiers of alternating dielectric and conductive materials, a cap oxide material vertically adjacent to the tiers, and pillars extending vertically through the tiers. The cap oxide material is formulated to exhibit a different etch rate relative to an etch rate of the oxide material of the tiers. Additional microelectronic devices, microelectronic systems, and methods of forming a microelectronic device are also disclosed.