公开(公告)号：US20240290385A1

公开(公告)日：2024-08-29

申请号：US18409702

申请日：2024-01-10

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Shyam Surthi ,  Martin W. Popp ,  KangYoul Lee ,  Yui Shimizu

IPC: G11C16/04 ,  H01L23/528

CPC classification number: G11C16/0483 ,  H01L23/5283

Abstract: A microelectronic device comprises, a control circuitry structure comprising an active region including control logic circuitry at least partially within a semiconductive material; a bond pad on a backside of the control circuitry structure; a conductive contact vertically extending from the bond pad, through the semiconductive material, and to the control logic circuitry; and a dielectric-filled slit vertically extending into the semiconductive material and horizontally circumscribing the conductive contact, portions of the semiconductive material horizontally interposed between the conductive contact and the dielectric-filled slit. Additional microelectronic devices, memory devices, microelectronic device packages, and electronic systems are also described.