公开(公告)号：US20240290385A1

公开(公告)日：2024-08-29

申请号：US18409702

申请日：2024-01-10

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Shyam Surthi ,  Martin W. Popp ,  KangYoul Lee ,  Yui Shimizu

IPC: G11C16/04 ,  H01L23/528

CPC classification number: G11C16/0483 ,  H01L23/5283

Abstract: A microelectronic device comprises, a control circuitry structure comprising an active region including control logic circuitry at least partially within a semiconductive material; a bond pad on a backside of the control circuitry structure; a conductive contact vertically extending from the bond pad, through the semiconductive material, and to the control logic circuitry; and a dielectric-filled slit vertically extending into the semiconductive material and horizontally circumscribing the conductive contact, portions of the semiconductive material horizontally interposed between the conductive contact and the dielectric-filled slit. Additional microelectronic devices, memory devices, microelectronic device packages, and electronic systems are also described.

公开(公告)号：US20240038759A1

公开(公告)日：2024-02-01

申请号：US18375048

申请日：2023-09-29

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Milind Nemchand Furia ,  Michael D. Chaine ,  Eric J. Smith

IPC: H01L27/02 ,  H01L21/8222 ,  G11C16/30 ,  G11C5/14

CPC classification number: H01L27/0262 ,  H01L21/8222 ,  G11C16/30 ,  G11C5/14 ,  G11C16/0483

Abstract: An apparatus includes a protection circuit electrically connected to first and second voltage domains. The protection circuit includes a first silicon-controlled rectifier (SCR) and a second SCR connected in anti-parallel configuration. The first SCR is configured to connect the first voltage domain and the second voltage domain based on detection of a first triggering condition. The second SCR is configured to connect the second voltage domain and the first voltage domain based on detection of a second triggering condition. The protection circuit is configured to isolate the first and second voltage domains without the triggering conditions.

公开(公告)号：US20220359495A1

公开(公告)日：2022-11-10

申请号：US17871681

申请日：2022-07-22

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Milind Nemchand Furia ,  Michael D. Chaine ,  Eric J. Smith

IPC: H01L27/02 ,  H01L21/8222

Abstract: An apparatus includes a protection circuit electrically connected to first and second voltage domains. The protection circuit includes a first silicon-controlled rectifier (SCR) and a second SCR connected in anti-parallel configuration. The first SCR is configured to connect the first voltage domain and the second voltage domain based on detection of a first triggering condition. The second SCR is configured to connect the second voltage domain and the first voltage domain based on detection of a second triggering condition. The protection circuit is configured to isolate the first and second voltage domains without the triggering conditions.

公开(公告)号：US20210183851A1

公开(公告)日：2021-06-17

申请号：US16712851

申请日：2019-12-12

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Milind Nemchand Furia ,  Michael D. Chaine ,  Eric J. Smith

IPC: H01L27/02 ,  H01L21/8222

Abstract: An apparatus includes a protection circuit electrically connected to first and second voltage domains. The protection circuit includes a first silicon-controlled rectifier (SCR) and a second SCR connected in anti-parallel configuration. The first SCR is configured to connect the first voltage domain and the second voltage domain based on detection of a first triggering condition. The second SCR is configured to connect the second voltage domain and the first voltage domain based on detection of a second triggering condition. The protection circuit is configured to isolate the first and second voltage domains without the triggering conditions.

公开(公告)号：US20200035650A1

公开(公告)日：2020-01-30

申请号：US16590595

申请日：2019-10-02

Applicant: Micron Technology, Inc.

Inventor： Kevin G. Duesman ,  James E. Davis ,  Warren L. Boyer

IPC: H01L25/065 ,  H01L27/02 ,  H01L23/00 ,  H01L25/00

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate, the die including a first contact pad electrically coupled to a first circuit on the die including an active circuit element, a first TSV electrically coupling the first contact pad to a first backside contact pad, and a second contact pad electrically coupled to a second circuit including only passive circuit elements. The substrate includes a substrate contact electrically coupled to the first and second contact pads. The assembly can further include a second die including a third contact pad electrically coupled to a third circuit including a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad, but electrically disconnected from the fourth contact pad.

公开(公告)号：US10483241B1

公开(公告)日：2019-11-19

申请号：US16020792

申请日：2018-06-27

Applicant: Micron Technology, Inc.

Inventor： Kevin G. Duesman ,  James E. Davis ,  Warren L. Boyer

IPC: H01L25/065 ,  H01L23/00 ,  H01L27/02 ,  H01L25/00 ,  H01L23/498 ,  H01L23/60 ,  H01L23/48 ,  H01L23/538 ,  H01L23/482

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate, the die including a first contact pad electrically coupled to a first circuit on the die including an active circuit element, a first TSV electrically coupling the first contact pad to a first backside contact pad, and a second contact pad electrically coupled to a second circuit including only passive circuit elements. The substrate includes a substrate contact electrically coupled to the first and second contact pads. The assembly can further include a second die including a third contact pad electrically coupled to a third circuit including a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad, but electrically disconnected from the fourth contact pad.

公开(公告)号：US11424169B2

公开(公告)日：2022-08-23

申请号：US16535882

申请日：2019-08-08

Applicant: Micron Technology, Inc.

Inventor： Chiara Cerafogli ,  Kenneth William Marr ,  Brian J. Soderling ,  Michael P. Violette ,  Joshua Daniel Tomayer ,  James E. Davis

IPC: H01L23/528 ,  G11C16/26 ,  H01L21/66 ,  H01L23/00 ,  H01L27/11526 ,  H01L27/11573 ,  H03K3/03 ,  H01L27/11582 ,  G11C16/08 ,  G11C16/04 ,  G11C29/14 ,  H01L27/11556

Abstract: Some embodiments include apparatuses and methods of fabricating the apparatuses. One of the apparatuses includes a substrate of a semiconductor die; a memory cell portion located over a first portion of the substrate; a conductive pad portion located over a second portion of the substrate and outside the memory cell portion; and a sensor circuit including a portion located over the second portion of the substrate and under the conductive pad portion. The conductive pad portion includes conductive pads. Each of the conductive pads is part of a respective electrical path coupled to a conductive contact of a base outside the substrate.

公开(公告)号：US20210175228A1

公开(公告)日：2021-06-10

申请号：US17178771

申请日：2021-02-18

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  John B. Pusey ,  Zhiping Yin ,  Kevin G. Duesman

IPC: H01L27/02 ,  H01L23/00 ,  H01L23/60 ,  H01L25/00 ,  H01L25/065 ,  H01L49/02 ,  H01L27/115

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to both the first and second contact pads. The semiconductor device assembly can further include a second die including a third contact pad electrically coupled to a third circuit on the second die including at least a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad and electrically disconnected from the fourth contact pad.

公开(公告)号：US10930645B2

公开(公告)日：2021-02-23

申请号：US16743451

申请日：2020-01-15

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  John B. Pusey ,  Zhiping Yin ,  Kevin G. Duesman

IPC: H01L27/02 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L23/60 ,  H01L49/02 ,  H01L27/115

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to both the first and second contact pads. The semiconductor device assembly can further include a second die including a third contact pad electrically coupled to a third circuit on the second die including at least a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad and electrically disconnected from the fourth contact pad.

公开(公告)号：US20200373238A1

公开(公告)日：2020-11-26

申请号：US16990886

申请日：2020-08-11

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Kevin G. Duesman

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/66 ,  H01L23/62 ,  H01L49/02 ,  H01L23/64

Abstract: Semiconductor devices having inductive structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a substrate and at least one circuit component coupled to the substrate. The semiconductor device can further include an inductive structure carried by the substrate and having a stack of alternating first and second layers. In some embodiments, the first layers comprise an oxide material and the second layers each include a coil of conductive material. The coils of conductive material can be electrically coupled (a) together to form an inductor and (b) to the at least one circuit component.