公开(公告)号：US09166159B2

公开(公告)日：2015-10-20

申请号：US13901195

申请日：2013-05-23

Applicant: Micron Technology, Inc.

Inventor： Carmela Cupeta ,  Andrea Redaelli ,  Paolo Giuseppe Cappelletti

IPC: H01L29/02 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/124 ,  H01L27/2409 ,  H01L27/2445 ,  H01L27/2463 ,  H01L27/2481 ,  H01L29/02 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1691

Abstract: Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material.

Abstract translation: 一些实施例包括具有在电介质材料上的导电材料的堆叠的半导体结构。 可编程材料结构沿着堆叠的侧壁表面直接抵靠导电材料和电介质材料。 与堆叠的导电材料电耦合的电极材料。 一些实施例包括形成存储器单元的方法，其中沿着包含导电材料和电介质材料的堆叠的侧壁表面形成可编程材料板。

公开(公告)号：US09577188B2

公开(公告)日：2017-02-21

申请号：US14853740

申请日：2015-09-14

Applicant: Micron Technology, Inc.

Inventor： Carmela Cupeta ,  Andrea Redaelli ,  Paolo Giuseppe Cappelletti

IPC: H01L29/02 ,  H01L47/00 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/124 ,  H01L27/2409 ,  H01L27/2445 ,  H01L27/2463 ,  H01L27/2481 ,  H01L29/02 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1691

Abstract: Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material.

Abstract translation: 一些实施例包括具有在电介质材料上的导电材料的堆叠的半导体结构。 可编程材料结构沿着堆叠的侧壁表面直接抵靠导电材料和电介质材料。 与堆叠的导电材料电耦合的电极材料。 一些实施例包括形成存储器单元的方法，其中沿着包含导电材料和电介质材料的堆叠的侧壁表面形成可编程材料板。

公开(公告)号：US20160056375A1

公开(公告)日：2016-02-25

申请号：US14853740

申请日：2015-09-14

Applicant: Micron Technology, Inc.

Inventor： Carmela Cupeta ,  Andrea Redaelli ,  Paolo Giuseppe Cappelletti

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/124 ,  H01L27/2409 ,  H01L27/2445 ,  H01L27/2463 ,  H01L27/2481 ,  H01L29/02 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1691

Abstract: Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material.

Abstract translation: 一些实施例包括具有在电介质材料上的导电材料的堆叠的半导体结构。 可编程材料结构沿着堆叠的侧壁表面直接抵靠导电材料和电介质材料。 与堆叠的导电材料电耦合的电极材料。 一些实施例包括形成存储单元的方法，其中沿着包含导电材料和电介质材料的堆叠的侧壁表面形成可编程材料板。

公开(公告)号：US20140346429A1

公开(公告)日：2014-11-27

申请号：US13901195

申请日：2013-05-23

Applicant: Micron Technology, Inc.

Inventor： Carmela Cupeta ,  Andrea Redaelli ,  Paolo Giuseppe Cappelletti

IPC: H01L45/00

CPC classification number: H01L45/124 ,  H01L27/2409 ,  H01L27/2445 ,  H01L27/2463 ,  H01L27/2481 ,  H01L29/02 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1691

Abstract: Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material.

Abstract translation: 一些实施例包括具有在电介质材料上的导电材料的堆叠的半导体结构。 可编程材料结构沿着堆叠的侧壁表面直接抵靠导电材料和电介质材料。 与堆叠的导电材料电耦合的电极材料。 一些实施例包括形成存储器单元的方法，其中沿着包含导电材料和电介质材料的堆叠的侧壁表面形成可编程材料板。