公开(公告)号：US20150001674A1

公开(公告)日：2015-01-01

申请号：US14486075

申请日：2014-09-15

Applicant: Micron Technology, Inc.

Inventor： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hull ,  Chris Carlson

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/56 ,  H01G4/10 ,  H01L27/108

Abstract: Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.

Abstract translation: 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

公开(公告)号：US20130258550A1

公开(公告)日：2013-10-03

申请号：US13903364

申请日：2013-05-28

Applicant: Micron Technology, Inc.

Inventor： Rishikesh Krishnan ,  F. Daniel Gealy ,  Vidya Srividya ,  Noel Rocklein

IPC: H01G4/255

CPC classification number: H01G4/255 ,  H01L27/10852 ,  H01L28/65

Abstract: Electrical components for microelectronic devices and methods for forming electrical components. One particular embodiment of such a method comprises depositing an underlying layer onto a workpiece, and forming a conductive layer on the underlying layer. The method can continue by disposing a dielectric layer on the conductive layer. The underlying layer is a material that causes the dielectric layer to have a higher dielectric constant than without the underlying layer being present under the conductive layer. For example, the underlying layer can impart a structure or another property to the film stack that causes an otherwise amorphous dielectric layer to crystallize without having to undergo a separate high temperature annealing process after disposing the dielectric layer onto the conductive layer. Several examples of this method are expected to be very useful for forming dielectric layers with high dielectric constants because they avoid using a separate high temperature annealing process.

公开(公告)号：US08987863B2

公开(公告)日：2015-03-24

申请号：US13903364

申请日：2013-05-28

Applicant: Micron Technology, Inc.

Inventor： Rishikesh Krishnan ,  F. Daniel Gealy ,  Vidya Srividya ,  Noel Rocklein

IPC: H01L21/02 ,  H01G4/255 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01G4/255 ,  H01L27/10852 ,  H01L28/65

Abstract: Electrical components for microelectronic devices and methods for forming electrical components. One particular embodiment of such a method comprises depositing an underlying layer onto a workpiece, and forming a conductive layer on the underlying layer. The method can continue by disposing a dielectric layer on the conductive layer. The underlying layer is a material that causes the dielectric layer to have a higher dielectric constant than without the underlying layer being present under the conductive layer. For example, the underlying layer can impart a structure or another property to the film stack that causes an otherwise amorphous dielectric layer to crystallize without having to undergo a separate high temperature annealing process after disposing the dielectric layer onto the conductive layer. Several examples of this method are expected to be very useful for forming dielectric layers with high dielectric constants because they avoid using a separate high temperature annealing process.