公开(公告)号：US12132078B2

公开(公告)日：2024-10-29

申请号：US18012809

申请日：2020-12-24

Applicant: TDK Corporation

Inventor： Yoshihiko Yano ,  Daiki Ishii ,  Kenichi Yoshida ,  Yuki Yamashita

IPC: H01G4/008 ,  H01G2/06 ,  H01G4/005 ,  H01G4/01 ,  H01G4/012 ,  H01G4/06 ,  H01G4/10 ,  H01G4/12 ,  H01G4/228 ,  H01G4/252 ,  H01G4/33 ,  H01L23/00 ,  H01L25/16 ,  H01L49/02 ,  H05K1/18

CPC classification number: H01L28/75 ,  H01G2/065 ,  H01G4/005 ,  H01G4/008 ,  H01G4/01 ,  H01G4/012 ,  H01G4/06 ,  H01G4/10 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/1254 ,  H01G4/228 ,  H01G4/33 ,  H01L25/16 ,  H01L28/84 ,  H05K1/18 ,  H01G4/252 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19102 ,  H01L2924/19103 ,  H05K2201/10015

Abstract: To provide a thin film capacitor having high adhesion performance with respect to a multilayer substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. A height of the first electrode layer is lower than a height of the second electrode layer. This enhances adhesion performance when the thin film capacitor is embedded in a multilayer substrate and improves ESR characteristics.

公开(公告)号：US20240297210A1

公开(公告)日：2024-09-05

申请号：US18662107

申请日：2024-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Eunae CHO ,  Yongsung KIM ,  Boeun PARK ,  Narae HAN

IPC: H01G4/10

CPC classification number: H01L28/75 ,  H01G4/10

Abstract: A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).

公开(公告)号：US20240258365A1

公开(公告)日：2024-08-01

申请号：US18541848

申请日：2023-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong KIM ,  Changsoo LEE ,  Cheheung KIM ,  Jooho LEE

IPC: H01G4/10 ,  H01G4/008 ,  H10B12/00

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/10 ,  H10B12/315

Abstract: Provided is a capacitor including a first thin film electrode layer, a second thin film electrode layer, a dielectric layer disposed between the first thin film electrode layer and the second thin film electrode layer, and an interlayer disposed between the second thin film electrode layer and the dielectric layer. Due to the interlayer, the decrease in permittivity of the dielectric layer is small while leakage current may be effectively reduced.

公开(公告)号：US12033799B2

公开(公告)日：2024-07-09

申请号：US17601702

申请日：2021-06-21

Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor： Xingsong Su ,  Weiping Bai ,  Mengkang Yu

IPC: H01G4/10 ,  H01G4/33

CPC classification number: H01G4/10 ,  H01G4/33

Abstract: A manufacturing method for capacitor structure includes: forming a dielectric layer on a first electrode, wherein the dielectric layer includes metal oxide layers doped with preset oxides, and part of the preset oxide and a metal oxide share oxygen atoms; and forming a second electrode on the dielectric layer, wherein the first electrode, the dielectric layer and the second electrode constitute a capacitor structure.

公开(公告)号：US20240112865A1

公开(公告)日：2024-04-04

申请号：US18464467

申请日：2023-09-11

Applicant: TDK CORPORATION

Inventor： Toshihiro IGUCHI ,  Daisuke YOSHIDA ,  Kazunori OSHIMA

IPC: H01G4/30 ,  H01G4/012 ,  H01G4/10 ,  H01G4/248

CPC classification number: H01G4/30 ,  H01G4/012 ,  H01G4/10 ,  H01G4/248

Abstract: An electronic device includes an element body. The element body includes a first internal electrode layer, a second internal electrode layer, and a dielectric layer laminated between the first internal electrode layer and the second internal electrode layer. Ni oxide particles exist at a first boundary between the first internal electrode layer and the dielectric layer. The dielectric layer includes a dielectric large particle in contact with both of the Ni oxide particles at the first boundary and the second internal electrode layer.

公开(公告)号：US20240055184A1

公开(公告)日：2024-02-15

申请号：US18494499

申请日：2023-10-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Manabu KANOU ,  Yuya KATO ,  Hiroyuki KOSHIKAWA ,  Michio SUZUKA

IPC: H01G4/10 ,  H01G4/008 ,  H01G4/14 ,  H01G2/06

CPC classification number: H01G4/10 ,  H01G4/008 ,  H01G4/14 ,  H01G2/06

Abstract: A capacitor of the present disclosure includes a first electrode, a second electrode, and a dielectric. The second electrode is disposed to face a principal surface of the first electrode. The dielectric is disposed between the first electrode and the second electrode. The dielectric is in contact with the first electrode and the second electrode. A surface of the second electrode extends, for example, parallel to a surface of the first electrode, the surfaces each being in contact with the dielectric. An electrical conductivity σx of the dielectric in a particular direction perpendicular to the principal surface and an electrical conductivity σy of the dielectric in a direction perpendicular to the particular direction satisfy a relation σx/σy≤0.01.

公开(公告)号：US20240047511A1

公开(公告)日：2024-02-08

申请号：US18145597

申请日：2022-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Boeun PARK ,  Jeongil BANG

IPC: H01G4/008 ,  H01G4/10

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/10

Abstract: Provided are a capacitor and a semiconductor device including the capacitor. The capacitor and the semiconductor device include a first electrode; a second electrode provided apart from the first electrode, a dielectric film between the first electrode and the second electrode, and an interfacial film wholly or at least partially in contact with the dielectric film and having an electron affinity greater than an electron affinity of the dielectric film.

公开(公告)号：US20230402497A1

公开(公告)日：2023-12-14

申请号：US18312383

申请日：2023-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Boeun PARK ,  Jeongil BANG ,  Cheheung KIM ,  Jooho LEE

IPC: H01L21/02 ,  H01G4/10

CPC classification number: H01L28/55 ,  H10B12/30 ,  H01L28/91 ,  H01L28/75 ,  H01G4/10

Abstract: A capacitor may include a first thin-film electrode layer; a second thin-film electrode layer; and a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer. The first thin-film electrode layer and the second thin-film electrode layer may include a conductive perovskite-type crystal structure. The dielectric layer may include a metal oxide having a dielectric perovskite-type crystal structure. The dielectric layer may be an epitaxial layer. The metal oxide may include a first element in a cubooctahedral site, a second element in an octahedral site, and a third element in an octahedral site. A valency of the third element may be lower than a valency of the second element, and the third element may be a dopant.

公开(公告)号：US20230384171A1

公开(公告)日：2023-11-30

申请号：US18232329

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Lien Linus LU

IPC: G01K7/34 ,  H01G4/10 ,  G05D23/20 ,  G01K3/00 ,  G01K1/02

CPC classification number: G01K7/34 ,  H01G4/10 ,  G05D23/2033 ,  G01K3/005 ,  G01K1/026

Abstract: A temperature-sensing device configured to monitor a temperature is disclosed. The temperature-sensing device includes: a first capacitor comprising a first oxide layer with a first thickness; a second capacitor comprising a second oxide layer with a second thickness, wherein the second thickness of the second oxide layer is different from the first thickness of the first oxide layer; and a control logic circuit, coupled to the first and second capacitors, and configured to determine whether the monitored temperature is equal to or greater than a threshold temperature based on whether at least one of the first and second oxide layers breaks down.

公开(公告)号：US20230343848A1

公开(公告)日：2023-10-26

申请号：US17933854

申请日：2022-09-21

Applicant: NATIONAL CHENG KUNG UNIVERSITY

Inventor： Chuan-Feng SHIH ,  Wen-Dung HSU ,  Bernard Hao-Chih LIU ,  Chung-Hung HUNG ,  Hsuan-Ta WU ,  Cheng-Hsien YEH

IPC: H01G4/10 ,  H01G4/005 ,  C22C30/06 ,  C22C30/02

CPC classification number: H01G4/10 ,  H01G4/005 ,  C22C30/06 ,  C22C30/02

Abstract: The present invention relates to a multicomponent-alloy material layer and a method of manufacturing the multicomponent-alloy material layer and a capacitor structure of a semiconductor device comprising the multicomponent-alloy material layer. The multicomponent-alloy material layer has four to six metal elements and has specific two kinds of metal components, and the two kinds of metal components have a specific content ratio, such that without a thermal annealing treatment, the multicomponent-alloy material layer has a specific work function for an application in the capacitor structure of the semiconductor device.