公开(公告)号：US20230380159A1

公开(公告)日：2023-11-23

申请号：US17747126

申请日：2022-05-18

Applicant: Micron Technology, Inc.

Inventor： Damir Fazil ,  John D. Hopkins ,  Indra V. Chary ,  Tom John ,  Joel D. Peterson ,  Kar Wui Thong ,  Zhaohui Ma

IPC: H01L27/11582 ,  H01L27/11556

CPC classification number: H01L27/11582 ,  H01L27/11556

Abstract: A memory array comprises strings of memory cells. The memory array comprises laterally-spaced memory blocks that individually comprise a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. The channel material of the channel-material strings directly electrically couples to conductor material of the conductor tier. Individual ones of the channel-material strings in a vertical cross-section comprise an external jog surface that is above the conductor tier and an internal jog surface that is in the conductor tier. Other aspects, including methods, are disclosed.