公开(公告)号：US11770930B2

公开(公告)日：2023-09-26

申请号：US17456544

申请日：2021-11-24

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Xuan Li ,  Adeline Yii

IPC: H01L21/00 ,  H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

CPC classification number: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

Abstract: A microelectronic device comprises a stack structure, at least one staircase structure, contact structures, and support structures. The stack structure comprises vertically alternating conductive structures and insulating structures arranged in tiers, each of the tiers individually comprising one of the conductive structures and one of the insulating structures. The at least one staircase structure is within the stack structure and has steps comprising edges of at least some of the tiers. The contact structures are on the steps of the at least one staircase structure. The support structures horizontally alternate with the contact structures in a first horizontal direction and vertically extend through the stack structure. The support structures have oblong horizontal cross-sectional shapes. Additional microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US11217601B2

公开(公告)日：2022-01-04

申请号：US16667704

申请日：2019-10-29

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Xuan Li ,  Adeline Yii

IPC: H01L21/00 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565

Abstract: A microelectronic device comprises a stack structure, at least one staircase structure, contact structures, and support structures. The stack structure comprises vertically alternating conductive structures and insulating structures arranged in tiers, each of the tiers individually comprising one of the conductive structures and one of the insulating structures. The at least one staircase structure is within the stack structure and has steps comprising edges of at least some of the tiers. The contact structures are on the steps of the at least one staircase structure. The support structures horizontally alternate with the contact structures in a first horizontal direction and vertically extend through the stack structure. The support structures have oblong horizontal cross-sectional shapes. Additional microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US20210126009A1

公开(公告)日：2021-04-29

申请号：US16667704

申请日：2019-10-29

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Xuan Li ,  Adeline Yii

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556

Abstract: A microelectronic device comprises a stack structure, at least one staircase structure, contact structures, and support structures. The stack structure comprises vertically alternating conductive structures and insulating structures arranged in tiers, each of the tiers individually comprising one of the conductive structures and one of the insulating structures. The at least one staircase structure is within the stack structure and has steps comprising edges of at least some of the tiers. The contact structures are on the steps of the at least one staircase structure. The support structures horizontally alternate with the contact structures in a first horizontal direction and vertically extend through the stack structure. The support structures have oblong horizontal cross-sectional shapes. Additional microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US20220085065A1

公开(公告)日：2022-03-17

申请号：US17456544

申请日：2021-11-24

Applicant: Micron Technology, Inc.

Inventor： Shuangqiang Luo ,  Xuan Li ,  Adeline Yii

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565

Abstract: A microelectronic device comprises a stack structure, at least one staircase structure, contact structures, and support structures. The stack structure comprises vertically alternating conductive structures and insulating structures arranged in tiers, each of the tiers individually comprising one of the conductive structures and one of the insulating structures. The at least one staircase structure is within the stack structure and has steps comprising edges of at least some of the tiers. The contact structures are on the steps of the at least one staircase structure. The support structures horizontally alternate with the contact structures in a first horizontal direction and vertically extend through the stack structure. The support structures have oblong horizontal cross-sectional shapes. Additional microelectronic devices, memory devices, and electronic systems are also described.