公开(公告)号：US20240371824A1

公开(公告)日：2024-11-07

申请号：US18605161

申请日：2024-03-14

Applicant: Micron Technology, Inc.

Inventor： Yichen Wang ,  Tsung Che Tsai ,  Vibhav Gupta ,  Wei Chang Wong ,  Raj K. Bansal

IPC: H01L23/00 ,  H01L21/3065 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L23/544 ,  H10B80/00

Abstract: A semiconductor device including a semiconductor die and an encapsulant material disposed at the edges of the semiconductor die and among the plurality of fin shape structures. The semiconductor die further includes a substrate, a functional die region disposed in a center of the semiconductor die, the functional die region having a stack layer structure within which a plurality of dielectric layers and a plurality of electrically conductive layers alternatively stacked, and a die edge region disposed at edges of the semiconductor die, the die edge region including a plurality of fin shape structures protruding along a horizontal direction to a sidewall of the semiconductor device.